MBRS130LT3

MBRS130LT3
SCHOTTKY BARRIER RECTIFIER
Schottky Power Rectifier
Surface Mount Power Package
SMB (DO-214AA)
1.1 ± 0 .3
4 .8 ± 0 .1 5
5 .4 ± 0 .1 5
Employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications
where compact size and weight are critical to the
system.
0.22 ± 0.07
2.0 ± 0.1
3.6 ± 0.1 5
FEATURES :
2.3 ± 0.2
Dimensions in millimeter
* Very Low Forward Voltage Drop
(0.395 Volts Max @ 1.0A, T J = 25°C)
* Small Compact Surface Mountable Package
* Highly Stable Oxide Passivated Junction
* Guardring for Stress Protection
* Pb / RoHS Free
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.1079 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
VALUE
UNIT
Maximum Repetitive Reverse Voltage
VRRM
30
V
Maximum Working Peak Reverse Voltage
VR W M
30
V
VDC
30
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (TL = 120°C)
IF(AV)
(TL = 110°C)
Maximum Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase)
IFSM
Maximum Instantaneous Forward Voltage (Note 1)
VF
(IF = 1.0 A, TJ = 25°C)
TJ = 25°C
Operating Junction Temperature
40
A
0.395
V
1.0
mA
10
mA
Rθ JL
12
°C/W
TJ
- 65 to +125
°C
IR
TJ = 100°C
Thermal Resistance - Junction to Lead (TL = 25°C)
A
2.0
0.445
(IF = 2.0 A, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note1)
1.0
Notes : (1) Pulse Test : Pulse W idth = 300µs Duty Cycle ≤ 2%
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( MBRS130LT3 )
FIG.2 - TYPICAL POWER DISSIPATION
8
RATED VOLTAGE APPLIED
R θJC = 12°C/W , TJ = 100°C
6
4
DC
SQUARE
WAVE
2
0
50
60
70
80
90
100
110
120
130
AVERAGE POWER DISSIPATION
(WATTS)
AVERAGE FORWARD CURRENT,
(A)
FIG.1 - CURRENT DERATING (CASE)
8
TJ = 100 ° C
4
REVERSE LEAKAGE CURRENT, (mA)
INSTANTANEOUS FORWARD
CURRENT, (A)
5.0
= 25 ° C
1.0
0.5
0.2
0.1
0.3
0.4
0.5
0.6
2
DC
0
3
4
5
6
7
8
FIG.4 - TYPICAL REVERSE LEAKAGE CURRENT
TJ = 100 ° C
0.2
1
π
AVERAGE FORWARD CURRENT, (A)
10
0.1
20
0
FIG.3 - TYPICAL FORWARD VOLTAGE
0
5
10
IPK
=
IAV
2
CASE TEMPERATURE, ( ° C)
2.0
SQUARE
WAVE
6
0.7
1000
100
10
TJ = 100 ° C
1.0
= 25 ° C
0.1
0.0
1
0.001
0
3
6
9
12
15
18
21
24
27
30
0.8
REVERSE VOLTAGE, (V)
INSTANTANEOUS VOLTAGE, (V)
FIG. 5 TYPICAL CAPACITANCE
CAPACITANCE , (pF)
400
NOTE :TYPICAL CAPACITANCE
AT 0 V = 290 pF
350
300
250
200
150
100
50
0
0
4
8
12
16
20
24
28
32
REVERSE VOLTAGE, (V)
Page 2 of 2
Rev. 02 : March 25, 2005