TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MB1S - MB10S MINI-BRIDGE RECTIFIERS MBS PRV : 100 - 1000 Volts Io : 0.5 Ampere 0.029(0.74) 0.017(0.43) FEATURES : 0.161(4.10) 0.144(3.65) * Glass passivated chip junctions. * High surge overload rating : 35A peak * Saves space on printed circuit boards. * High temperature soldering guaranteed : o 260 C/10 seconds. * Pb / RoHS Free ~ ~ 0.272(6.90) 0.252(6.40) 0.105(2.67) 0.095(2.41) 0.195(4.95) 0.179(4.55) 0.205(5.21) 0.195(4.95) 0.106(2.70) 0.094(2.40) MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Terminals : Plated Lead solderable per MIL-STD-750, Method 2026 * Polarity : Polarity symbols marked on body * Mounting position : Any * Weight : 0.22 gram 0.114(2.90) 0.094(2.40) 0.016(0.41) 0.006(0.15) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified 60 Hz, resistive or inductive load RATING SYMBOL MB1S MB2S MB4S MB6S MB8S MB10S UNIT Maximum Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Maximum Average Forward Output Rectified Current (See Fig.1) IF(AV) 0.5 (1) (on glass-epoxy P.C.B.) 0.8 (2) (on aliminum substrate) A Maximum Peak Forward Surge Current Single half sine wave Superimposed IFSM 35 A 2 It 5.0 A2S VF 1.0 V IR 5.0 μA IR(H) 100 μA on rated load (JEDEC Method) Rating for fusing (t < 8.3 ms.) Maximum Instantaneous Forward Voltage per element at IF = 0.4 A Maximum DC Reverse Current Ta = 25°C at Rated DC Blocking Voltage Ta = 125°C Typical Junction Capacitance per element Typical Thermal Resistance Junction and Storage Temperature Range Cj RӨJA TJ, TSTG 13 (3) pF 85 (1) °C/W -55 to + 150 °C Notes : (1) On glass epoxy P.C Board mounted on 0.5" x 0.5" (13mm x 13mm) Pads. (2) On aluminum substrate P.C.B. with an area 0.8" x 0.8" (20mm x 20mm) mounted on 0.5" x 0.5" (13mm x 13mm) Pads. (3) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 03 : October 25, 2006 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( MB1S - MB10S ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER BRIDGE ELEMENT 35 1.0 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT Aluminum Substrate 0.8 0.6 Glass Epoxy P.C.B. 0.4 0.2 28 21 Ta = 40°C 14 Single Half Sine-Wave (JEDEC Method) 7 Resistive or Inductive Load 0 0 25 50 75 100 125 150 0 175 1 AMBIENT TEMPERATURE, (°C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 100 1 Pulse Width = 300 μs 1% Duty Cycle 0.1 TJ = 25°C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 10 TJ = 125°C 10 1.0 TJ = 25°C 0.1 FORWARD VOLTAGE, VOLTS 0.0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 03 : October 25, 2006