D25XB20 ~ D25XB60 SILICON BRIDGE RECTIFIERS RBV25 PRV : 200 - 600 Volts Io : 25 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL D25XB20 D25XB60 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 600 V Maximum RMS Voltage VRMS 140 420 V Maximum DC Blocking Voltage VDC 200 600 V 25 (With heatsink, Tc = 98°C) A Maximum Average Forward Current IF(AV) 50 Hz sine wave, R-load Peak Forward Surge Current, 50Hz sine wave Non-repetitive 1 cycle peak value, Tj = 25 °C Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 12.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 3.5 (Without heatsink, Ta = 25°C) IFSM 350 A I2 t VF 300 A2S 1.05 V IR 10 µA IR(H) 200 µA RθJC 1.0 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Note : 1. Thermal resistance from junction to case, With heat sink. Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( D25XB20 ~ D25XB60 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 600 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 30 With heatsink 25 20 15 10 5 0 0 25 50 75 100 125 150 500 T J = 50 °C 400 300 200 100 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 10 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES TJ = 100 °C 10 Pulse Width = 300 µs 1 % Duty Cycle 1.0 1.0 T J = 25 °C 0.1 Tc = 25 °C 0.1 0.01 0 20 40 60 80 10 0 12 0 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005