TH09/2479 TH97/2478 www.eicsemi.com HSS102 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.11g 1.00 (25.4) min. 0.017 (0.43)max. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Reverse Voltage VR 70 V Average Rectified Current Io 35 mA Power Dissipation PD 150 mW Junction Temperature TJ 125 °C Storage temperature range Tstg -65 to + 125 °C Electrical Characteristics Parameter (Ta = 25°C unless otherwise noted) Symbol Reverse Current IR Reverse Voltage VR Forward Voltage Diode Capacitance Diode Capacitance Deviation Forward Voltage Deviation Page 1 of 2 Test Condition Min Typ Max Unit VR = 50 V - - 100 nA IR = 10 µA 70 - - V IF = 10 mA - - 0.50 V Cd ∆Cd IF = 20 mA VR = 0V, f = 1MHz VR = 0V, f = 1MHz - - 1.10 2.2 0.2 V pF pF ∆VF IF = 20 mA - - 10 mV VF Rev. 03 : December 3, 2008 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( HSS102 ) Forward Current VS. Forward Voltage Reverse Current VS. Reverse Voltage 10-1 10-6 10-3 Reverse Current , IR (A) Forward Current , IF (A) 10-2 10-4 10-5 10-6 10-7 10-8 10-7 10-8 10-9 10-9 0 0.2 0.6 0.4 0.8 1.0 1.2 Forward Voltage , VF (V) 10-10 0 10 20 30 40 50 60 70 Reverse Voltage , VR (V) Diode capacitance VS. Reverse Voltage 2.2 2.0 Diode Capacitance , Cd (pF) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 Reverse Voltage , VR (V) Page 2 of 2 Rev. 03 : December 3, 2008