TH09/2479 TH97/2478 www.eicsemi.com SF161C ~ SF166C IATF 0113686 SGS TH07/1033 SUPER FAST RECTIFIERS TO-220AB PRV : 50 ~ 400 Volts Io : 16 Ampere 0.154(3.91)DIA. 0.148(3.74) FEATURES : 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) * High current capability * High surge current capability 0.145(3.68) 0.135(3.43) 0.635(16.13) 0.625(15.87) * High reliability 2 1 2 * Low reverse current * Low forward voltage drop 0.185(4.70) 0.175(4.44) 0.415(10.54)MAX. 0.603(15.32) 0.573(14.55) 0.350(8.89) 0.330(8.39) 3 0.160(4.06) 0.140(3.56) PIN 1 0.560(14.22) 0.530(13.46) PIN 2 * Super fast switching speed CASE * Pb / RoHS Free PIN 3 0.037(0.94) 0.027(0.68) 0.205(520) 0.195(4.95) MECHANICAL DATA : * Case: Molded plastic * Epoxy: Device has UL flammability classification 94V-O * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight : 2.24 grams (Approximately) 0.022(0.56) 0.014(0.36) 0.105(2.67) 0.095(2.41) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL SF161C SF162C SF163C SF164C SF165C SF166C UNIT Maximum Repetitive Peak Reverse Voltage VRRM Maximum Working Reverse Voltage VRWM 35 70 105 140 210 280 V VDC 50 100 150 200 300 400 V Maximum DC Blocking Voltage Maximum Average Forward Current Total Device,(Rated VR), Tc = 125°C Maximum Peak Rectified Forward Current 8.3 ms single half sine-wave, superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at IF = 8 A Maximum Reverse Current at Tc = 25 °C Rated DC Blocking Voltage Tc = 100 °C Typical Thermal Resistance, Junction to Case 50 100 150 200 300 400 8.0 (Per Leg ) IF(AV) A 16 (Total Device) IFSM VF 150 1.0 V A 1.35 V µA IR 10 IR(H) 500 µA RθJC 3.0 °C/W Typical Junction Capacitance (1) CJ 50.0 30 pF Maximum Reverse Recovery Time (2) Trr 35 50 ns Operating and Storage Temperature Range TJ, TSTG - 65 to + 150 °C Notes : (1) Measured at 1 MHz and applied reverse voltage of 4.0 volts. (2) Reverse Recovery Test Conditions : IF = 0.5A, IR = 1A ; Irr = 0.25 A Page 1 of 2 Rev. 02 : March 31, 2005 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( SF161C ~ SF166C ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 D.U.T. + 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 15/25 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG. 2 - DERATING CURVE FOR OUTPUT CURRENT FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD SURGE CURRENT, (A) AVERAGE FORWARD OUTPUT CURRENT, AMPERES 20 16 12 Single Phase Half Wave 60Hz Inductive or Resistive Load 8 4 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 90 60 30 0 1 10 100 AVERAGE FORWARD CURRENT (AMPS) 100 REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES 8.3ms Single Half Sine-Wave (JEDEC Method) 120 FIG. 5 -TYPICAL REVERSE CHARACTERISTICS 100 SF161C~SF164C 10 SF165C~SF166C 1.0 TJ = 25 °C 0.1 Tc = 100 °C 10 Tc = 25 °C 1 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS Page 2 of 2 150 1.3 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, VOLTS Rev. 02 : March 31, 2005