UF4001 ~ UF4007

TH97/2478
www.eicsemi.com
UF4001 ~ UF4007
IATF 0113686
SGS TH07/1033
TH09/2479
ULTRA FAST EFFICIENT
RECTIFIER DIODES
PRV : 50 ~ 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
1.00 (25.4)
MIN.
0.108 (2.74)
0.078 (1.99)
0.205 (5.20)
0.161 (4.10)
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
VRRM
UF
4001
50
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
RATING
SYMBOL
Maximum Average Forward Current
Ta = 55 °C
0.375"(9.5mm) Lead Length
UF
4002
100
UF
4003
200
UF
4004
400
UF
4005
600
UF
4006
800
UF
4007
1000
UNIT
V
IF(AV)
1.0
A
IFSM
30
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I F = 1.0 A
Ta = 25 °C
Maximum DC Reverse Current
Ta = 100 °C
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time
(2)
(1)
VF
1.0
1.7
V
IR
10
μA
IR(H)
50
μA
Trr
50
75
ns
CJ
17
pf
RθJA
60
°C/W
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Typical Junction Capacitance
Typical Thermal Resistance
Notes :
(3)
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
( 3 ) Thermal Resistance from Junction to Ambient, 0.375" , 9.5 mm Lead Lengths.
Page 1 of 2
Rev. 04 : March 31, 2005
TH97/2478
www.eicsemi.com
IATF 0113686
SGS TH07/1033
TH09/2479
RATING AND CHARACTERISTIC CURVES ( UF4001 ~ UF4007 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx.)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 25-35 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.0
0.8
0.6
0.4
0.2
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
24
18
12
6
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
0
25
50
75
100
125
150
175
1
AMBIENT TEMPERATURE, ( °C)
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
REVERSE CURRENT,
MICROAMPERES
10
FORWARD CURRENT, AMPERES
2
UF4001
THRU
UF4004
1.0
UF4005
THRU
UF4007
0.1
1.0
TJ = 100 °C
0.1
TJ = 25 °C
TJ = 25 °C
Pulse Width = 300 μs
1% Duty Cycle
0.01
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 04 : March 31, 2005