BAS16WS SMALL SIGNAL DIODES SOD-323 PRV : 100 Volts Io : 250 mA * Silicon Epitaxial Planar Diode * Fast switching diodes. 0.112 (2.85) 0.100 (2.55) FEATURES : 0.065 (1.65) 0.076 (1.95) 0.012 (0.3) 0.049 (1.25) max. max. 0.004(0.1) * Pb / RoHS Free MECHANICAL DATA : * Case : SOD-323 plastic Case * Weight : approx. 0.004 g max. 0.006 (0.15) 0.059 (1.5) 0.043 (1.1) min. 0.010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Rectified Current (Continuous) IF(AV) 250 mA Surge Forward Current at t = 1 s and Tj = 25 °C IFSM 500 Power Dissipation at Tamb = 25 °C Ptot Junction Temperature Tj 150 °C Storage Temperature Range TS -65 to + 150 °C ELECTRICAL CHARACTERISTICS (Rating at Tj = Parameter 200 mA 1) mW 25 °C unless otherwise specified) Symbol Min. Typ. Max. Unit Forward Voltage at IF = 50 mA VF - - 1 V Leakage Current at VR=25 V, Tj=150°C IR - - 30 nA at VR = 75 V IR - - 1 µA at VR=75 V, Tj=150°C Capacitance at VF = VR = 0 V IR - - 50 µA Ctot - - 4 pF Trr - - 6 ns RthJA - - 650 1) °C/W Reverse Recovery Time from IF = 10 mA to IR = 10 mA, IR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Note : 1) Valid provided that electrodes are kept at ambient temperature Page 1 of 2 Rev. 03 : March 25, 2005 RATINGS AND CHARACTERISTIC CURVES ( BAS16WS) Forward charecteristics Dynamic forward resistance versus forward current mA V 103 104 5 Tj = 25 °C f = 1 kHz 2 102 Tj = 100 °C 3 10 Tj = 25 °C iF 5 rF 10 2 102 5 1 2 10 10-1 5 2 1 -2 10 0 1 10-2 2V 10-1 VF 102 10 1 mA IF Admissible power dissipation versus ambient temperture Relative capacitance versus reverse voltage For conditions, see footnote in table "Absolute Maximum Ratings" mW 500 C tot (V R ) 1.1 C tot (0 V) 400 P tot Tj = 25 °C f = 1 kHz 1.0 300 0.9 200 0.8 100 0.7 0 0 100 T amb Page 2 of 2 200 °C 0 2 4 6 8 10 V VR Rev. 03 : March 25, 2005