www.eicsemi.com FBR3500W - FBR3510W FAST RECOVERY BRIDGE RECTIFIERS BR50W PRV : 50 - 1000 Volts Io : 35 Amperes 0.732 (18.6) 0.692 (17.5) FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.130 (28.7) 1.120 (28.4) 0.470 (11.9) 0.430 (10.9) 0.21 (5.3) 0.20 (5.1) * Pb / RoHS Free MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency * Weight : 15.95 grams 0.042 (1.06) 0.038 (0.96) 1.2 (30.5) MIN. 0.310 (7.87) 0.280(7.11) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL FBR FBR FBR FBR FBR FBR FBR 3500W 3501W 3502W 3504W 3506W 3508W 3510W UNIT Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 Maximum Average Forward Current Tc = 55 °C IF(AV) 35 A I FSM 400 A I t VF 2 660 1.3 A S V IR 10 µA Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 17.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range I R(H) Trr 2 µA 200 150 V 250 500 ns R θJC 10 °C/W TJ - 50 to + 150 °C T STG - 50 to + 150 °C Notes : 1 ) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A 2 ) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate Page 1 of 2 Rev. 02 : March 24, 2005 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( FBR3500W - FBR3510W ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 Ω Trr 10 Ω + 0.5 + D.U.T. 0 PULSE GENERATOR ( NOTE 2 ) 50 Vdc (approx) 1Ω - 0.25 OSCILLOSCOPE ( NOTE 1 ) - 1.0 A SET TIME BASE FOR 50/200 ns/cm NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 1 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types. FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 400 35 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 28 21 14 7 Tc = 55 °C 360 240 160 80 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS FORWARD CURRENT, AMPERES 4 6 10 20 40 60 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE 100 10 1.0 Pulse W idth = 300 µs 2% Duty Cycle 0.1 2 NUMBER OF CYCLES AT 60Hz TJ = 25 °C PER DIODE 10 TJ = 100 °C 1.0 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 24, 2005