Certificate TH97/10561QM MMBD7000 Certificate TW00/17276EM DUAL SURFACE MOUNT SWITCHING DIODE SOT-23 PRV : 100 Volts Io : 200 mA 0.100 0.013 1.40 0.95 0.50 0.35 3.10 2.70 0.19 0.08 * Surface mount package ideally suited for automatic insertion * Fast switching speed * High conductance * Pb / RoHS Free 3 1 2 1.65 1.20 3.0 2.2 FEATURES : 1.02 0.89 2.04 1.78 3 MECHANICAL DATA : * Case : SOT-23 plastic Case * Marking Code : RC 1 2 Dimensions in millimeters MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta =25 °C) Symbol Value Unit VRRM 100 V Reverse Voltage VR 100 V Forward Current IF 200 mA Parameter Repetitive Peak Reverse Voltage Non-repetitive Peak Forward Surge Current at t = 1 μs at t = 1 s Power Dissipation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS Parameter PD 350 mW TJ, TSTG -65 to +150 °C Symbol Min. Max. Unit V(BR)R 100 - V 0.55 0.70 0.67 0.82 0.75 1.10 IF = 150 mA - 1.25 VR = 50 V - 1 - 3 IR = 100 µA Forward Voltage IF = 1 mA IF = 10 mA IF = 100 mA VR = 100 V VF IR VR = 50 V , Tj = 125 °C Total Capacitance VR = 0 V, f = 1 MHz Reverse Recovery Time IF = IR = 10 mA, Irr = 0.1 x I R RL = 100 Ω Page 1 of 2 A 1 (Ta =25 °C) Test Condition Reverse Breakdown Voltage Reverse Current 2 IFSM V µA - 100 CT - 2 pF Trr - 4 ns Rev. 01 : September 4, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATINGS AND CHARACTERISTIC CURVES ( MMBD7000 ) FIG.1 - FORWARD CHARACTERISTICS FIG.2 - LEAKAGE CURRENT VS. JUNCTION TEMPERATURE 10 LEAKAGE CURRENT, (μA) INSTANTANEOUS FORWARD CURRENT, (mA) 1,000 100 10 1.0 1.0 0.1 0.01 VR = 20 V 0.001 0.1 0 100 200 JUNCTION TEMPERATURE, (°C) 0.01 1.0 0 2.0 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG.3 - POWER DISSIPATION DERATING POWER DISSIPATION, (mW) 400 300 200 100 0 0 50 100 150 AMBIENT TEMPERATURE, (°C) Page 2 of 2 Rev. 01 : September 4, 2006