MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - 40 Volts Power Dissipation - 300 mWatt FEATURES ● ● ● Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 A C B B TOP VIEW C E D E G H ● ● ● ● 2.30 2.50 D 0.89 1.03 E 0.45 0.60 3 J 0.013 0.10 C K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 L 0 E B 1 8 All Dimensions in mm 2 3 Collector 2 Emitter 2 Emitter ● MAXIMUM RATING (Ta = 25 ℃) Symbol VCEO VCBO VEBO IC Limits 40 60 6 200 Unit Vdc Vdc Vdc mAdc PD 225 mW RΘJA 1.8 556 mW/℃ ℃/W PD 300 mW RΘJA 2.4 417 mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ ●THERMAL CHARACTERISTICS 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. 1.40 C 2.05 1 Base 1. FR–5 = 1.0×0.75×0.062 in. 0.51 1.20 3.00 3 Collector Total Device Dissipation, FR-5 Board (Note1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 0.37 B 1.78 M Top View Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous A 2.80 J 1 Base Max H K Case: SOT-23, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Marking: Device Code Weight: 0.008 grams (approx.) Min G MECHANICAL DATA ● Dim MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - 40 Volts ● ELECTRICAL CHARACTERISTICS (Ta = 25℃) OFF CHARACTERISTICS Characteristic Symbol V BR(CEO) Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, I B = 0) V BR(CBO) Collector–Base Breakdown Voltage (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, IC = 0) Collector Cutoff Current ICEX ( V CE = 30 Vdc, V EB = 3.0Vdc) Base Cutoff Current IBL (V CE = 30 Vdc, V EB = 3.0 Vdc) ON CHARACTERISTICS (Note 3.) hFE DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Characteristic Symbol Current–Gain — Bandwidth Product fT (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance Cobo (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Cibo Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance hie (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio hre (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain hfe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance hoe (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure NF (VCE=5V, IC=100μA, RS=1.0kΩ ,f =1.0kHz) 3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. Power Dissipation - 300 mWatt Min. Typ. Max. 40 – – 60 – 6 – – V – V – – 50 – – 50 40 70 100 60 30 – – – – – – – 300 – – – – – – 0.2 0.3 0.65 – – – 0.85 0.95 Min. Typ. Max. 300 – – – – – 1 Unit V – – 4 8 nA nA V V Unit MHz pF pF kΩ 10 X 10 0.5 – 8 100 – 400 –4 μmhos 1 – – – 40 5 dB MMBT3904 RATINGS AND CHARACTERISTIC CURVES ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SWITCHING CHARACTERISTICS Delay Time td (V CC = 3.0 Vdc, V BE = tr –0.5 Vdc,I C = 10 mAdc, Rise Time IB1 =1.0 mAdc) ts (VCC = 3.0 Vdc, IC = Storage Time 10 mAdc, IB1 = IB2 = tf Fall Time 1.0 mAdc) +3 V DUTY CYCLE = 2% 300 ns +10.9 V 35 – – 200 – – 50 35 ns +3V +10.9 V DUTY CYCLE = 2% 275 10 k 10 k ± 0.5 V – – t1 10 < t1< 500us 275 – – 0 CS < 4 pF* < 1 ns CS < 4 pF* 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 5000 VCC=40 V IC/IB=10 3000 7.0 2000 Q, CHARGE (pC) CAPACITANCE ( pF ) 10 5.0 Cibo 3.0 Cobo 2.0 o TJ=25 C o TJ=125 C 1000 700 500 QT 300 200 QA 100 1.0 70 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE ( VOLTS ) Figure 3. Capacitance 20 30 40 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) Figure 4. Charge Data 200 MMBT3904 RATINGS AND CHARACTERISTIC CURVES 500 500 300 IC/IB=10 200 200 100 100 70 tr, RISE TIME ( ns ) TIME (ns) 300 tr @ VCC=3.0 V 50 30 20 40 V 70 50 30 20 15 V 10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 7 2.0 V td @ VOB=0 V 50 70 100 30 5 200 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time IC/IB=20 IC/IB=10 t'S = tS - 1/8tf IB1/IB2 100 70 50 IC/IB=20 IC/IB=10 30 20 70 50 30 20 7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 5 200 IC/IB=20 100 10 IC/IB=10 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) SOURCE RESISTANCE=200 IC=0.5 mA 8 SOURCE RESISTANCE=1.0 K IC=50uA 6 4 SOURCE RESISTANCE=500 IC=100uA 0.1 0.2 0.4 1.0 30 50 70 100 200 14 SOURCE RESISTANCE=200 IC=1.0 mA 10 20 Figure 8. Fall Time NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 12 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) Figure 7. Storage Time 0 200 VCC=40 V IB1=IB2 200 7 2 50 70 100 300 10 5 30 500 tf, FALL TIME ( ns ) t's, STORAGE TIME ( ns ) 200 20 Figure 6. Rise Time 500 300 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) 12 IC =1.0 mA f = 1.0 KHZ IC =0.5 mA 10 IC =100 uA IC =50 uA 8 6 4 2 2.0 4.0 10 f, FREQUENCY (kHz) Figure 9. 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE ( k OHMS ) Figure 10. 40 100 MMBT3904 RATINGS AND CHARACTERISTIC CURVES 100 hoe, OUTPUTADMITTANCE (umhos) hfe, CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 5.0 2.0 3.0 50 20 10 5 2 1 10 0.1 0.2 IC, COLLECTOR CURRENT ( mA ) hre, VOLTAGE FEEDBACK RATIO(X 10-4) hie, INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 1.0 2.0 3.0 5.0 10 Figure 12. Output Admittance 20 0.1 0.5 IC, COLLECTOR CURRENT ( mA ) Figure 11. Current Gain 0.2 0.3 5.0 2.0 3.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT ( mA ) IC, COLLECTOR CURRENT ( mA ) Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio 10 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 o TJ = +125 C VCE=1.0V o TJ = +25 C 1.0 0.7 o TJ = -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) Figure 15. DC Current Gain 20 30 50 70 100 200 MMBT3904 RATINGS AND CHARACTERISTIC CURVES VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 o TJ = 25 C 0.8 10 mA IC = 1.0 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) 1.2 1.0 1.0 0.5 VBE(sat) @ IC/IB=10 0.8 VBE @ ICE=1.0 V 0.6 0.4 VCE(sat) @ IC/IB=10 0.2 0 o 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage 100 200 o +25 C to +125 C VC o COEFFICIENT ( mV / C ) V, VOLTAGE ( VOLTS ) Figure 16. Collector Saturation Region 0 FOR VCE(sat) o o o o -55 C to +25 C -0.5 -55 C to +25 C -1.0 o VB -1.5 -2.0 0 20 40 60 80 o +25 C to +125 C FOR VBE(sat) 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) Figure 18. Temperature Coefficients