MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - -40 Volts Power Dissipation - 300 mWatt FEATURES ● ● ● Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 A C B B TOP VIEW C E D E G H ● ● ● ● 2.30 2.50 D 0.89 1.03 E 0.45 0.60 3 J 0.013 0.10 C K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 B E 1 2 L 0 8 All Dimensions in mm COLLECTOR 3 BASE 1 2 EMITTER 2 Emitter Symbol VCEO VCBO VEBO IC Limits -40 -60 -5 -200 Unit Vdc Vdc Vdc mAdc PD 225 mW RΘJA 1.8 556 mW/℃ ℃/W PD 300 mW RΘJA 2.4 417 mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ ●THERMAL CHARACTERISTICS 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. 1.40 C 2.05 ● MAXIMUM RATING (Ta = 25 ℃) 1. FR–5 = 1.0×0.75×0.062 in. 0.51 1.20 3.00 3 Collector Total Device Dissipation, FR-5 Board (Note1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 0.37 B 1.78 M Top View Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous A 2.80 J 1 Base Max H K Case: SOT-23, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Marking: Device Code Weight: 0.008 grams (approx.) Min G MECHANICAL DATA ● Dim MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR Voltage - -40 Volts ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol VBR(CEO) Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) VBR(CBO) Collector–Base Breakdown Voltage (I C = –10 μAdc, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = –10 μAdc, IC = 0) Collector Cutoff Current ICEX ( V CE = –30 Vdc, VEB =– 3.0Vdc) Base Cutoff Current IBL (V CE = –30 Vdc, VEB = –3.0Vdc) ON CHARACTERISTICS (Note 1.) DC Current Gain hFE (I C = –0.1 mAdc, VCE = – 1.0 Vdc) (I C = –1.0 mAdc, VCE = – 1.0 Vdc) (I C = –10 mAdc, VCE = – 1.0 Vdc) (I C = –50 mAdc, VCE = – 1.0 Vdc) (I C = –100 mAdc, VCE = – 1.0 Vdc) Collector–Emitter Saturation Voltage(3) VCE(sat) (I C = –10 mAdc, IB = –1.0 mAdc) (I C = –50mAdc, IB = – 5.0 mAdc) Base–Emitter Saturation Voltage VBE(sat) (I C = –10 mAdc, IB = –1.0 mAdc) (I C = –50mAdc, IB = – 5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Characteristic Symbol Current–Gain — Bandwidth Product fT (I C = –10mAdc, VCE= –20Vdc, f = 100MHz) Output Capacitance Cobo (V CB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance Cibo (V EB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance hie (VCE =– 10 Vdc, IC = –1.0mAdc,f=1.0 kHz) Voltage Feedback Ratio hre (V CE = –10 Vdc, IC = –1.0mAdc,f=1.0 kHz) Small–Signal Current Gain (V CE=–10 Vdc, I C =–1.0mAdc,f=1.0 kHz) Output Admittance (V CE=–10 Vdc, I C =–1.0mAdc,f =1.0kHz) Noise Figure (VCE=–5V,I C =–100μA, RS=1.0kΩ ,f=1.0kHz) 3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. hfe hoe NF Power Dissipation - 300 mWatt Min. Typ. Max. –40 – – –40 – – –5 – – Unit V V V nA – –50 – – –50 60 80 100 60 30 – – – – – – – 300 – – – – – – –0.25 –0.4 –0.65 – – – –0.85 –0.95 Min. Typ. Max. 250 – – – – – nA V V – 2 – – 4.5 10 Unit MHz pF pF kΩ 12 X 10 –4 0.1 – 10 100 – 400 μmhos 3 – 60 – – 4 dB MMBT3906 RATINGS AND CHARACTERISTIC CURVES ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SWITCHING CHARACTERISTICS Delay Time td (V CC = –3.0 Vdc, VBE = tr 0.5 Vdc,I C = –10 mAdc, Rise Time IB1= – 1.0 mAdc) ts (VCC = – 3.0 Vdc, I C = Storage Time –10 mAdc,I B1 = IB2 = tf Fall Time –1.0 mAdc) – – – – 225 – – 75 3V 35 ns 3V < 1 ns +9.1 V 275 275 < 1 ns ±0.5 V 10 k 10 k 0 CS < 4 pF* 10.6 V 35 – – 300 ns 10 < t1< 500us DUTY CYCLE = 2% CS < 4 pF* 1N916 t1 DUTY CYCLE = 2% 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 5000 VCC=40 V IC/IB=10 3000 7.0 2000 5.0 Q, CHARGE (pC) CAPACITANCE ( pF ) 10 Cobo Cibo 3.0 o TJ=25 C o TJ=125 C 1000 2.0 700 500 300 200 QT QA 100 1.0 70 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 30 50 70 100 200 Figure 4. Charge Data 300 VCC=40 V IB1=IB2 300 IC/IB=10 200 200 100 100 70 tr, RISE TIME ( ns ) TIME (ns) 20 500 500 tr @ VCC=3.0 V 50 15 V 30 20 40 V 10 2.0 3.0 5.0 7.0 10 20 30 70 50 30 20 IC/IB=10 7 td @ VOB=0 V 1.0 IC/IB=20 10 2.0 V 7 5 5.0 7.0 10 IC, COLLECTOR CURRENT ( mA ) REVERSE BIAS ( VOLTS ) 50 70 100 IC, COLLECTOR CURRENT ( mA ) Figure 5. Turn-On Time 200 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT ( mA ) Figure 6. Fall Time 200 MMBT3906 RATINGS AND CHARACTERISTIC CURVES TYPICAL TRANSIENT CHARACTERISTICS NOISE FIGURE VARIATIONS o (VCE= -5.0Vdc, TA=25 C, Bandwidth=1.0HZ) 12 SOURCE RESISTANCE=200 IC=1.0 mA NF, NOISE FIGURE ( bB ) NF, NOISE FIGURE ( bB ) 5.0 4.0 SOURCE RESISTANCE=200 IC=0.5 mA 3.0 SOURCE RESISTANCE=2.0 K IC=50uA 2.0 1.0 0 f = 1.0 KHZ 10 8 6 IC =50 uA 4 SOURCE RESISTANCE=2.0 K 2 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Figure 7. 40 0 100 0.1 0.4 2.0 4.0 10 40 20 100 Figure 8. 100 200 100 70 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 50 30 20 10 7 5 10 0.1 0.2 IC, COLLECTOR CURRENT ( mA ) hre, VOLTAGE FEEDBACK RATIO(X 10-4) 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) Figure 11. Input Impedance 0.5 1.0 2.0 3.0 5.0 10 Figure 10. Output Admittance 20 0.1 0.3 IC, COLLECTOR CURRENT ( mA ) Figure 9. Current Gain hie, INPUT IMPEDANCE (k OHMS) 1.0 h PARAMETERS o (VCE= -10Vdc, f=1.0 kHZ, TA=25 C) hoe, OUTPUTADMITTANCE (umhos) hfe, DC CURRENT GAIN 0.2 RS, SOURCE RESISTANCE ( k OHMS ) 300 0.2 IC =100 uA IC =0.5 mA f, FREQUENCY (kHz) 30 IC =1.0 mA 5.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( mA ) 5.0 7.0 Figure 12. Voltage Feedback Ratio 10 MMBT3906 RATINGS AND CHARACTERISTIC CURVES hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 o TJ = +125 C VCE=1.0V o TJ = +25 C 1.0 0.7 o TJ = -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 100 70 200 IC, COLLECTOR CURRENT ( mA ) Figure 13. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 o TJ = 25 C 0.8 10 mA IC = 1.0 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT ( mA ) Figure 14. Collector Saturation Region 1.0 o TEMPERATURE COEFFICIENTS (mV / C) 1.0 VBE(sat) @ IC/IB=10 VBE @ ICE=1.0 V 0.6 0.4 0.2 VCE(sat) @ IC/IB=10 o 0.5 VC o +25 C to +125 C FOR VCE(sat) 0 o o -55 C to +25 C -0.5 o o -55 C to +25 C -1.0 o VB -1.5 o +25 C to +125 C FOR VBE(sat) V, V, VOLTAGE ( VOLTS ) 0.8 0 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT ( mA ) Figure 17. " ON " Voltage 100 200 -2.0 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT ( mA ) Figure 16. Temperature Coefficients