SZ103D THRU SZ10E0 1W SURFACE MOUNT SILICON ZENER DIODE VZ : 3.3 ~ 300 Volts PD : 1 Watt SMA (DO-214AC) * Complete Voltage Range 3.3 to 300 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15 FEATURES : 0.2 ± 0.07 1.2 ± 0.2 2.1 ± 0.2 2.6 ± 0.15 MECHANICAL DATA * Case : SMA (DO-214AC) Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead formed for Surface mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.064 gram 2.0 ± 0.2 Dimensions in millimeter MAXIMUM RATINGS Rating at 25 ° C ambient temperature unless otherwise specified Rating Symbol Value Unit DC Power Dissipation at TL = 50 °C (Note1) PD 1.0 Watt Maximum Forward Voltage at IF = 200 mA VF 1.2 Volts Junction Temperature Range TJ - 55 to + 150 °C Storage Temperature Range Ts - 55 to + 150 °C Note : (1) TL = Lead temperature at 5.0 mm2 ( 0.013 mm thick ) copper land areas. PD, MAXIMUM DISSIPATION (WATTS) Fig. 1 POWER TEMPERATURE DERATING CURVE 1.25 5.0 mm2 ( 0.013 mm thick ) copper land areas. 1.00 0.75 0.50 0.25 0 0 25 50 75 100 125 TL, LEAD TEMPERATURE (°C) 150 175 SZ103D THRU SZ10E0 1W SURFACE MOUNT SILICON ZENER DIODE ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified) Type Nominal Zener Voltage IZT VZ (1) @ IZT (V) (mA) ZZT @ IZT ( ) Maximum Zener Impedance ZZK @ IZK IZK (mA) ( ) Maximum Reverse Leakage Current IR @ VR (V) (µA) Maximum DC Zener Current IZM (mA) SZ103D 3.3 76.0 10 400 1.0 100 1.0 SZ103G 3.6 69.0 10 400 1.0 100 1.0 SZ103J 3.9 64.0 9.0 400 1.0 50 1.0 SZ104D 4.3 58.0 9.0 400 1.0 10 1.0 SZ104H 4.7 53.0 8.0 500 1.0 10 1.0 SZ105B 5.1 49.0 7.0 550 1.0 10 1.0 SZ105G 5.6 45.0 5.0 600 1.0 10 2.0 SZ106C 6.2 41.0 2.0 700 1.0 10 3.0 SZ106I 6.8 37.0 3.5 700 1.0 10 4.0 SZ107F 7.5 34.0 4.0 700 0.5 10 5.0 SZ108C 8.2 31.0 4.5 700 0.5 10 6.0 SZ109B 9.1 28.0 5.0 700 0.5 10 7.0 SZ1010 10 25.0 7.0 700 0.25 10 7.6 SZ1011 11 23.0 8.0 700 0.25 5.0 8.4 SZ1012 12 21.0 9.0 700 0.25 5.0 9.1 SZ1013 13 19.0 10 700 0.25 5.0 9.9 SZ1015 15 17.0 14 700 0.25 5.0 11.4 SZ1016 16 15.5 16 700 0.25 5.0 12.2 SZ1018 18 14.0 20 750 0.25 5.0 13.7 SZ1020 20 12.5 22 750 0.25 5.0 15.2 SZ1022 22 11.5 23 750 0.25 5.0 16.7 SZ1024 24 10.5 25 750 0.25 5.0 18.2 SZ1027 27 9.5 35 750 0.25 5.0 20.6 SZ1030 30 8.5 40 1000 0.25 5.0 22.8 SZ1033 33 7.5 45 1000 0.25 5.0 25.1 SZ1036 36 7.0 50 1000 0.25 5.0 27.4 SZ1039 39 6.5 60 1000 0.25 5.0 29.7 SZ1043 43 6.0 70 1500 0.25 5.0 32.7 SZ1047 47 5.5 80 1500 0.25 5.0 35.8 SZ1051 51 5.0 95 1500 0.25 5.0 38.8 SZ1056 56 4.5 110 2000 0.25 5.0 42.6 SZ1062 62 4.0 125 2000 0.25 5.0 47.1 SZ1068 68 3.7 150 2000 0.25 5.0 51.7 SZ1075 75 3.3 175 2000 0.25 5.0 56.0 82 3.0 200 3000 0.25 5.0 62.2 SZ1082 SZ1091 91 2.8 250 3000 0.25 5.0 69.2 SZ10B0 100 2.5 350 3000 0.25 5.0 76.0 SZ10B1 110 2.3 450 4000 0.25 5.0 83.6 SZ10B2 120 2.0 550 4500 0.25 5.0 91.2 SZ10B3 130 1.9 700 5000 0.25 5.0 98.8 SZ10B5 150 1.7 1000 6000 0.25 5.0 114.0 SZ10B6 160 1.6 1100 6500 0.25 5.0 121.6 SZ10B8 180 1.4 1200 7000 0.25 5.0 136.8 SZ10D0 200 1.2 1900 9990 0.25 5.0 152.0 SZ10D2 220 1.0 1600 8000 0.25 5.0 167.2 SZ10D4 240 0.93 1800 8500 0.25 5.0 182.4 SZ10D5 250 0.90 2000 9000 0.25 5.0 190 SZ10D7 270 0.82 2100 9000 0.25 5.0 205 SZ10E0 300 0.75 2300 9500 0.25 5.0 228 Notes : (1) The type number listed have a standard tolerance on the nominal zener voltage of ±10%, altered the fourth number of type from " 0 " for±10% tolerance to be " 5 " for ±5.0% tolerance. (2) Surge current is a non-repetitive, 8.3ms pulse width square wave or equivalent sine-wave superimposed on IZT per JEDEC Method (3) " SZ " will be omitted in marking on the diode. 276 252 234 217 193 178 162 146 133 121 110 100 91 83 76 69 61 57 50 45 41 38 34 30 27 25 23 22 19 18 16 14 13 12 11 10 9.0 8.6 7.8 7.0 6.4 5.8 5.2 4.7 4.0 3.8 3.6 3.3 3.0 Maximum Surge Current IRM(2) (mApk) 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 305 285 250 225 205 190 170 150 135 125 115 110 95 90 80 70 65 60 55 50 45 40 37 34 30 28 25 22 20 18.5 18 16.5 15