ROHM RSAC6.8CS

Data Sheet
Ultra Low Capacitance ESD Protection Diode
RSAC6.8CS
lApplications
ESD Protection
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.55
0.16±0.05
4)By chip-mounter, automatic mounting is possible.
0.45
1.0±0.05
0.9±0.05
0.5
lFeatures
1)Ultra small mold type.(VMN2)
2)Low Capacitance.
3)High Reliability.
0.45
0.6±0.05
VMN2
0.156
lConstruction
Silicon epitaxial planar
0.37±0.03
0.35±0.1
lStructure
ROHM : VMN2
dot (year week factory) + day
lTaping dimensions (Unit : mm)
2±0.05
0.7±0.05
2±0.05
φ 1.55
0.2±0.05
8.0±0.2
1.1±0.05
3.5±0.05
1.75±0.1
4±0.1
φ 0.5
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Ta=25C)
Parameter
Symbol
Vz
Zener voltage
0.52
4.0±0.1
Limits
100
150
Unit
mW
C
C
-55 to +150
Min.
Typ.
Max.
Unit
Conditions
6.7
-
7.33
V
IZ=5mA
Reverse current
IR
-
-
1.0
μA
Capacitance between terminals
Ct
-
0.3
-
pF
VR=3.0V
VR=0V , f=1MHz
* Zener voltage (VZ) shall be measured at 40ms after loading current.
* Electrical characteristic assurance is just only zener direction.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.10 - Rev.A
100
1000
Ta=25°C
Ta=75°C
Ta=-25°C
REVERSE CURRENT:IR (pA)
10
ZENER CURRENT:Iz(mA)
Data Sheet
RSAC6.8CS
Ta=125°C
1
0.1
Ta=125°C
100
Ta=75°C
10
Ta=25°C
1
0.01
0.001
0.1
5
6
7
8
9
0
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1
2
7.3
10
f=1MHz
Ta=25°C
IZ=5mA
n=30pcs
ZENER VOLTAGE:Vz(V)
7.2
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
3
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
1
7.1
7
AVE:7.05V
6.9
0.1
6.8
0
0.5
1
1.5
2
2.5
3
Vz DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
Ta=25°C
VR=3V
n=30pcs
40
30
20
AVE:8.68pA
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
REVERSE CURRENT:IR(pA)
50
0
Ta=25°C
f=1MHz
VR=0V
n=10pcs
0.9
0.8
0.7
0.6
0.5
AVE:0.303pF
0.4
0.3
0.2
0.1
0
Ct DISPERSION MAP
IR DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.10 - Rev.A
Data Sheet
RSAC6.8CS
1000
1000
Rth(j-a)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
DYNAMIC IMPEDANCE:Zz(Ω)
On glass-epoxy substrate
100
10
1
100
10
0.001
1
0.1
Rth(j-c)
10
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
AVE:1.00kV
0
C=200pF
R=0Ω
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.10 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A