ROHM QS8J5

4V Drive Pch + Pch MOSFET
QS8J5
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
(1) (2)
(3) (4)
Abbreviated symbol : J05
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000

QS8J5
(8)
(7)
(6)
(5)
∗2
∗2
∗1
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
ID
5
A
20
1
A
A
20
A
Tch
Tstg
1.5
1.25
150
55 to +150
W / TOTAL
W / ELEMENT
C
C
Symbol
Limits
Unit
83.3
100
°C / W /TOTAL
°C / W /ELEMENT
Continuous
Drain current
Source current
(Body Diode)
Pulsed
Continuous
IDP
Is
*1
Pulsed
Isp
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to ambient
*
Rth (ch-a)
* Each terminal mounted on a ceramic board.
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○
1/5
2010.01 - Rev.A
QS8J5
Data Sheet
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=20V, VDS=0V
Conditions
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
28
39
-
40
56
-
45
63
Forward transfer admittance
l Yfs l*
3
-
-
S
ID=5A, VDS=10V
Input capacitance
Ciss
-
1100
-
pF
VDS=10V
Output capacitance
Coss
-
150
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
130
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
9
-
ns
ID=2.5A, VDD 15V
tr *
-
40
-
ns
VGS=10V
td(off) *
-
90
-
ns
RL 6
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
Rise time
Turn-off delay time
ID=5A, VGS=10V
m ID=2.5A, VGS=4.5V
ID=2.5A, VGS=V
tf *
-
55
-
ns
RG=10
Total gate charge
Qg *
-
10.0
-
nC
ID=5A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
3.6
3.0
-
nC
nC
VGS=5V
RL 3,RG=10
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
Is=5A, VGS=0V
*Pulsed
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c 2010 ROHM Co., Ltd. All rights reserved.
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2/5
2010.01 - Rev.A
QS8J5
Data Sheet
Electrical characteristic curves
VGS= -3.0V
3
VGS= -2.8V
2
VGS= -10V
VGS= -4.5V
VGS= -4.0V
1
4
VGS= -3.0V
3
VGS= -2.8V
2
VGS= -10V
VGS= -4.5V
VGS= -4.0V
1
0.2
0.4
0.6
0.8
1
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.001
0
0
0
2
4
6
8
0
10
1
2
3
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
1000
100
10
0.1
1
1000
VGS= -10V
Pulsed
100
10
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
100
10
1
0.1
1
100
10
1
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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c 2010 ROHM Co., Ltd. All rights reserved.
○
10
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= -4.0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
VGS= -4.0V
VGS= -4.5V
VGS= -10V
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
10
VDS= -10V
Pulsed
REVERSE DRAIN CURRENT : -Is [A]
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
1000
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
VDS= -10V
Pulsed
Ta=25°C
Pulsed
DRAIN CURRENT : -ID[A]
4
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
10
5
Ta=25°C
Pulsed
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
5
10
1
0.1
0.01
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2010.01 - Rev.A
Data Sheet
10000
Ta=25°C
Pulsed
80
ID= -5.0A
60
40
ID= -2.5A
20
td(off)
1000
10
Ta=25°C
VDD= -15V
VGS= -10V
tf
GATE-SOURCE VOLTAGE : -VGS [V]
100
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
QS8J5
RG=10
Pulsed
100
td(on)
10
tr
0
1
0
5
10
15
20
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
.11 Switching Characteristics
10
8
6
Ta=25°C
VDD= -15V
ID= -5.0A
RG=10Ω
Pulsed
4
2
0
0
2
4
6
8 10 12 14 16 18 20
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
CAPACITANCE : C [pF]
10000
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
Coss
100
Crss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/5
2010.01 - Rev.A
QS8J5
Data Sheet
 Measurement circuits


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c 2010 ROHM Co., Ltd. All rights reserved.
○
5/5
2010.01 - Rev.A
Notice
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R1010A