QSL9 Transistors General purpose transistor (isolated transistor and diode) QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL9 0.3 to 0.6 zStructure Silicon epitaxial planar transistor Schottky barrier diode ROHM : TSMT5 0.95 0.95 1.9 2.9 (5) 0.85 1.0MAX 0 to 0.1 0.7 0.16 (3) (4) (2) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (1) 0.4 2.8 1.6 Each lead has same dimensions Abbreviated symbol : L09 zEquivalent circuit (5) (4) Di2 Tr1 (1) (2) (3) zPackaging specifications Type QSL9 Package TSMT5 Marking Code L09 Basic ordering unit(pieces) 3000 TR Rev.A 1/4 QSL9 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Limits Symbol −15 VCBO VCEO −12 −6 VEBO −1.5 IC Collector current ICP −3 Power dissipation Pc 0.9 Junction temperature Tj 150 Range of storage temperature Tstg −40 to +125 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V A ∗1 A W/ELEMENT ∗2 °C °C ∗1 Single pulse, Pw=1ms. ∗2 Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate. ∗3 Each terminal mounted on a recommended. Di2 Parameter Peak reverse voltage Reverse voltage (DC) Average rectified forward current Forward current surge peak (60HZ, 1∞) Power dissipation Junction temperature Range of storage temperature Limits Symbol 25 VRM 20 VR 700 IF 3 IFSM 0.7 PD 125 To Tstg −40 to +125 ∗ Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate. Unit V V ma A W/ELEMENT ∗ °C °C z Tr1 & Di2 Parameter Total power dissipation Unit W/ TOTAL W/ TOTAL Limits 0.5 1.25 Symbol PD ∗1 ∗2 ∗1 Each terminal mounted on a recommended. ∗2 Mounted on a 25mm+ 25mm+ t0.8mm seramic substrate. zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −12 −15 −6 − − − 270 − − Typ. − − − − − −110 − 400 12 Max. − − − −100 −100 −200 680 − − Unit V V V nA nA mV − MHz pF Conditions IC= −1mA IC= −10µA IE= −10µA VCB= −15V VEB= −6V IC= −500mA, IB= −25mA VCE= −2V, IC= −200mA VCE= −2V, IE=200mA, f=100MHz VCB= −10V, IE=0mA, f=1MHz Di2 Parameter Forward voltage Reverse current Reverse recovery time Symbol Min. Typ. Max. Unit VF IR − − − − 490 200 mV µA VR=20V trr − 9 − ns IF=IR=100mA,Irr=0.1IR Conditions IF=700mA Rev.A 2/4 QSL9 Transistors zElectrical characteristic curves Ta=100°C VCE= −2V Pulsed Ta=25°C Ta= −40°C 100 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) 10 IC/IB=20/1 VCE= −2V Pulsed Ta=25°C 1 Ta=100°C VCE(sat) 0.1 Ta=100°C Ta=25°C 0.01 Ta= −40°C 0.001 0.001 0.1 1 10 Ta=25°C Ta= −40°C 0.01 0 0.5 1 0.1 IC/IB=50/1 0.01 IC/IB=20/1 1.5 BASE TO EMITTER CURRENT : VBE(on) (V) Fig.4 Grounded emitter propagation characteristics IC/IB=10/1 0.001 0.001 0.01 0.1 1 10 Fig.3 Collector-emitter saturation voltage vs. collector current 10000 Ta=25°C Ta=25°C VCE= −2V f=100MHz VCE= −5V f=100MHz SWITCHING TIME : (ns) TRANSITION FREQUENCY : fT (MHz) 1 Ta=100°C Pulsed COLLECTOR CURRENT : IC (A) 1000 VCE= −2V Pulsed 0.1 Ta=25°C vs. collector current 10 COLLECTOR CURRENT : IC (A) 0.01 1 COLLECTOR CURRENT : IC (A) collector current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) VBE(sat) Fig.2 Base-emitter saturation voltage Fig.1 DC current gain vs. 0.001 Ta= −40°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATUATION VOLTAGE : VBE(sat) (V) Tr1 100 1000 100 tstg tf 10 tdon tr 10 0.001 0.01 0.1 1 10 1 0.001 0.01 0.1 1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Switching time 10 vs. emitter current 1000 Ta=25˚C IE=0mA f=1MHz 100 Cib Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 QSL9 Transistors Di2 1000m REVERSE CURRENT : IR (A) 100m 1 C 5° 25 °C =2 5 °C 10m 2 =1 =− Ta Ta 100m Ta FORWARD CURRENT : IF (A) 10 1m Ta=125°C 10m 1m 100µ Ta=25°C 10µ Ta= −25°C 1µ 0.1µ 0.1m 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics 70 Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1