Model A200N50X4 Chip Termination 200 Watts, 50Ω Description The A200N50X4 is high performance Aluminum Nitride (AlN) chip termination intended as a cost competitive alternative to Beryllium Oxide (BeO). The termination is well suited to all cellular frequency bands such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling makes the part ideal for terminating circulators and for use in power combiners. The termination is also RoHS compliant! Features: • RoHS Compliant General Specifications Resistive Element Substrate Terminal Finish Operating Temperature • 200 Watts • DC - 2.2 GHz • AlN Ceramic • Non-Nichrome Resistive Element Thick film AlN Ceramic Matte Tin over Nickel Barrier -50 to +200°C (see de rating chart) Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed applicable portions of MIL-E-5400. All dimensions in inches. Electrical Specifications • Low VSWR Resistance Value: Power: Frequency Range: Return Loss • 100% Tested 50 Ohms, ± 2% 200 Watts DC – 2.2 GHz > 20 dB DC – 2.2 GHz Specification based on unit properly installed using suggested mounting instructions and a 50 ohm nominal impedance. Specifications subject to change. Outline Drawing UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES 1 of 2 USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392 Model A200N50X4 Typical Performance: A200N50X4 Power De-rating: A200N50X4 Mounting Footprint and Procedure: *Actual performance could be limited by the solder properties of the application 2 of 2 USA/Canada: Toll Free: Europe: (315) 432-8909 (800) 544-2414 +44 2392-232392