SMD Schottky Barrier Diode CDBF00340 I o = 30 mA V R = 40 Volts RoHS Device Features 1005/SOD-323F -Designed for mounting on small surface. 0.102(2.60) 0.095(2.40) -Extremely thin package. -Low stored charge. 0.051(1.30) 0.043(1.10) -Majority carrier conduction. Mechanical data -Case: 1005/SOD-323F standard package, molded plastic. 0.035(0.90) 0.027(0.70) -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. 0.020(0.50) Typ. -Polarity: Indicated by cathode band. 0.012 (0.30) Typ. -Mounting position: Any 0.040(1.00) Typ. -Weight: 0.006 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 45 V Reverse voltage VR 40 V Average forward current IO 30 mA Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) Power Dissipation I FSM 500 PD Sunction temperature T STG Junction temperature Tj mA 200 -40 mW +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 1 mA DC VF 0.37 V Reverse current V R = 30V V R = 40V IR 0.50 1.00 uA Capacitance between terimnals F = 1 MHZ and 1 VDC reverse voltage CT 1.5 pF REV:A QW-A1008 Page 1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF00340) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m 100m 100u Reverse current ( A ) 1m O -25 C O 25 O 12 C 100u 5 C 7 5 OC Forward current (A ) O 10m 10u O 75 C 1u O 100n 25 C 10n O -25 C 1n 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.7 5 10 15 20 25 30 35 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 40 10 Mounting on glass epoxy PCBs f = 1 MHz Ta = 25 C Average forward current(%) Capacitance between terminals ( P F) 125 C 1 0.1 100 80 60 40 20 0 0 5 1 0 5 1 2 0 Reverse voltage (V) 2 5 3 0 0 25 50 75 100 125 150 O Ambient temperature ( C) REV:A QW-A1008 Page 2