MMBT2222A

Small Signal Transistor
MMBT2222A-G (NPN)
RoHS Device
Features
SOT-23
-NPN silicon epitaxial planar transistor for
switching and amplifier application.
0.118(3.00)
0.110(2.80)
3
Mechanical data
0.055(1.40)
0.047(1.20)
-Case: SOT-23, molded plastic.
1
2
0.079(2.00)
0.071(1.80)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.006(0.15)
0.003(0.08)
-Approx. weight: 0.008 grams
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
Diagram:
0.004(0.10) max
Collector
3
0.020(0.50)
0.012(0.30)
1
Base
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
2
Emitter
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Value
Units
Collector-Base voltage
VCBO
75
V
Collector-Emitter voltage
VCEO
40
V
Emitter-Base voltage
VEBO
6.0
V
Collector current-continuous
IC
600
mA
Power dissipation
PC
300
mW
RθJA
417
°C/W
TJ
150
°C
TSTG
-55 to +150
°C
Parameter
Thermal resistance, junction to ambient
Junction temperature
Storage temperature range
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 1
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Max.
Units
Collector-Base breakdown voltage
V(BR)CBO
IC=10μA, IE=0
75
V
Collector-Emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
40
V
Emitter-Base breakdown voltage
V(BR)EBO
IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.01
μA
Collector cut-off current
ICEO
VCE=30V, VBE(off)=3V
0.01
μA
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1
μA
hFE(1)
VCE=10V, IC=150mA
100
hFE(2)
VCE=10V, IC=0.1mA
40
hFE(3)
VCE=10V, IC=500mA
42
Collector-Emitter saturation voltage
VCE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.3
1
V
Base-Emitter saturation voltage
VBE(sat)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
1.2
2.0
V
Transition frequency
fT
VCE=20V, IC=20mA
f=100MHz
Delay time (see fig.1)
td
Rise time (see fig.1)
tr
Storage time (see fig.2)
ts
Fall time (see fig.2)
tf
DC current gain
VCC=30V, VBE(off)=-0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
300
300
MHz
10
nS
25
nS
225
nS
60
nS
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 2
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
RATING AND CHARACTERISTIC CURVES (MMBT2222A-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
0.25
500
1mA
COMMON EMITTER
VCE=10V
0.9mA
0.20
400
0.8mA
DC Current Gain, hFE
Collector Current, IC (mA)
COMMON
EMITTER
Ta=25°C
0.7mA
0.15
0.6mA
0.5mA
0.10
0.4mA
0.3mA
0.05
Ta=100°C
300
200
Ta=25°C
100
0.2mA
IB=0.1mA
0.00
0
6
4
2
8
10
0
0.1
12
100
10
Collector-Emitter Voltage, VCE (V)
Collector Current, Ic (mA)
Fig.3 - VCEsat — IC
Fig.4 - VBEsat — IC
β = 10
β = 10
Base - Emitter Saturation
Voltage, VBEsat (V)
0.4
0.3
0.2
0.1
Ta= 25°C
0.8
Ta=100°C
0.4
0.0
0.0
10
1
100
600
1
10
100
Collector Current, Ic (mA)
Fig.5 - IC — VBE
Fig.7 - Cob/Cib — VCB/VEB
100
COMMON EMITTER
VCE=10V
f=1MHZ
IE=0/IC=0
Ta=25°C
Capacitance, C (pF)
100
Ta=100°C
10
Ta= 25°C
1
0.1
0.0
600
Collector Current, Ic (mA)
600
Collector Current, Ic (mA)
600
1.2
0.5
Collector -Emitter Saturation
Voltage, VCEsat (V)
1
0.2
0.4
0.6
0.8
1.0
Cib
10
Cob
0
0.1
Base - Emmiter Voltage, VBE (V)
1
10
20
Reverse Voltge, V (V)
REV:B
Page 3
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
RATING AND CHARACTERISTIC CURVES (MMBT2222A-G)
Fig.7 - FT — IC
Fig.8 - PC — Ta
500
Collector Power Dissipation, Pc (mW)
400
Transtion frequency, fT (MHZ)
COMMON EMITTER
VCE=20V f=200MHz
TA=25°C
300
200
100
0
100
10
80
0
Collector Current, IC (mA)
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
REV:B
Page 4
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
P1
d
T
F
E
P0
B
W
C
A
P
12
o
0
D2
D1
D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
Φ1.50 ± 0.10
178 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039
REV:B
Page 5
QW-BTR30
Comchip Technology CO., LTD.
Small Signal Transistor
Marking Code
3
Part Number
Marking Code
MMBT2222A-G
1P
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
REV:B
Page 6
QW-BTR30
Comchip Technology CO., LTD.