ROHM BA41W12SAT

BA41W12SAT
Regulator ICs
Dual output voltage regulator with power
saving
BA41W12SAT
The BA41W12SAT is a general-purpose power supply with outputs : 8V, 1A and 8V, 500mA. The IC is available in a
compact TO220FP-5 package. The outputs can be turned off during the power saving state with a built-in switch. Also
built in the IC are an overcurrent protection circuit, an overvoltage protection circuit, and a thermal shutdown circuit.
zApplications
Car audio systems, VCRs, facsimiles, air conditions, and other household and industrial equipment
zFeatures
1) Minimum I / O voltage differential is 0.5V or less.
2) Built-in protection circuits against overcurrent, over voltage, and overheat.
3) Available in a compact TO220FP-5 package (pins are bendable)
4) Zero power saving current. (Typ.)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power supply voltage
VCC
Power dissipation
Pd
Limits
Unit
35
V
2000∗1
mW
Operating temperature
Topr
−40~+85
˚C
Storage temperature
Tstg
−55~+150
˚C
Peak applied voltage
VCCPeak
50∗2
V
∗1 Reduced by 16mW for each increase in Ta of 1˚C over 25˚C.
∗2 Applied time is less than 200ms (tr≥1ms).
tr≥1ms
50V
35V
Max.200ms
0V
zRecommended operating conditions (Ta=25°C)
Parameter
Power supply voltage
Symbol
Min.
Typ.
Max.
Unit
VCC
9.0
13
25
V
BA41W12SAT
Regulator ICs
zBlock diagram
VCC
REFERENCE VOLTAGE
2
1
8V
OUT1
+
CTL
5
GND
5V
3
4
+
zPin descriptions
Pin No.
Pin name
1
OUT1
2
VCC
Function
Output 1 (8V, 1A)
Power supply
3
GND
Ground
4
OUT2
Output 2 (5V, 500mA)
5
CTL
ON / OFF switch
OUT2
BA41W12SAT
Regulator ICs
zInput / output circuits
OUT1, 2
VCC (2pin)
CTL (5pin)
25k
1, 4pin
10.8k (1pin)
6k (4pin)
25k
2k
GND (3pin)
GND (3pin)
zElectrical characteristics (unless otherwise noted, Ta=25°C, VCC=13.0V)
Parameter
Typ.
Max.
Conditions
Unit
Test circuit
Symbol
Min.
Power save supply current
IST
-
0
10
µA
OFF mode
Fig.4
Bias current
Ib
-
3.0
5.0
mA
ON mode
Fig.4
<8V output section> (Output 1)
Output voltage 1
Minimum I / O voltage differential 1
Output current capacity 1
VO1
7.6
8.0
8.4
V
IO1=500mA
Fig.1
∆VO1
-
0.3
0.5
V
IO1=500mA VCC=7.6V
Fig.3
IO1
1.0
-
-
A
55
-
dB
-
50
100
mV
VCC=9→25V, IO=500mA
Fig.1
-
100
150
mV
IO=5mA→1A
Fig.1
VCC=25V
Fig.5
R.R1
-
Input stabillty 1
Reg.I1
Load regulation 1
Reg.L1
Ripple rejection ratio 1
Fig.1
IO1=500mA, f=120Hz
eIN=1Vrms
Fig.2
IOS1
-
150
-
mA
VO2
4.75
5.0
5.25
V
IO2=350mA
Fig.1
∆VO2
-
0.3
0.5
V
IO2=350mA VCC=4.75V
Fig.3
IO2
500
-
-
mA
R.R2
-
60
-
dB
IO2=350mA, f=120Hz
eIN=1Vrms
Fig.2
Input stabillty 2
Reg.I2
-
50
100
mV
VCC=6→25V, IO=350mA
Fig.1
Load regulation 2
Reg.L2
-
50
100
mV
IO=5mA→500mA
Fig.1
IOS2
-
100
-
mA
VCC=25V
Fig.5
ON mode voltage
Vth1
2.0
-
-
V
Output ACTIVE MODE
Fig.6
OFF mode voltage
Vth2
-
-
0.8
V
Output OFF MODE
Fig.6
IIN
-
150
-
µA
Vth=5V
Fig.7
Output short-circuit current 1
<8V output section> (Output 2)
Output voltage 2
Minimum I / O voltage differential 2
Output current capacity 2
Ripple rejection ratio 2
Output short-circuit current 2
Fig.1
<CTL section>
Input high level current
Note) All the characteristic values are measured with a 0.33µF-capacitor connected the input pin and 22µF-capacitor connected to the output pin.
Measurements are made by using a plus (tw≤10ms, duty cycle≤5%) in all cases but noise voltage and the ripple rejection ratio.
BA41W12SAT
Regulator ICs
zMeasurement circuits
OUT1
VCC
OUT2
CTL
GND
0.33µ
+
22µ
V
VCC
5V
+
IO1
22µ
V
IO2
VCC=13V,
IO=500mA
when measuring output voltage 1
VCC=13V,
IO=350mA
when measuring output voltage 2
VCC=9→25V,
IO=500mA
when measuring input stability 1
VCC=9→25V,
IO=350mA
when measuring input stability 2
VCC=13V,
IO=5mA→1A
when measuring load reguration 1
VCC=13V,
IO=5mA→500mA
when measuring load reguration 2
VCC=13V
when measuring output current capacity 1
VCC=13V
when measuring output current capacity 2
Fig.1 Circuit for measuring output voltage, input stability, load regulation, and output current capacity
VCC
OUT1
10Ω5W
VCC
CTL
+
GND
OUT2
+ 22µ
0.33µ
100µ
+
eIN=1Vrms
f=120Hz
5V
500mA
22µ
350mA
VCC=13V, IO1=500mA when measuring the ripple rejection ratio 1
VCC=13V, IO2=350mA when measuring the ripple rejection ratio 2
Fig.2 Circuit for measuring ripple rejection ratio
BA41W12SAT
Regulator ICs
V
V
OUT1
VCC
CTL
OUT2
GND
+ 22µ
V
0.33µ
VCC
+
500mA
22µ
5V
V
350mA
VCC=7.6V
when measuring minimum I / O voltage difference 1
VCC=4.75V
when measuring minimum I / O voltage difference 2
Fig.3 Circuit for measuring minimum I / O voltage difference
OUT1
VCC
A
CTL
GND
OUT2
+
0.33µ
VCC
+
22µ
22µ
5V
VCC=13V, IO=0mA, VCTL=5V
when measuring bias current
VCC=13V, IO=0mA, VCTL=0V
when measuring power save supply current
Fig.4 Circuit for measuring bias current and power save supply current
OUT1
VCC
CTL
GND
OUT2
+
0.33µ
22µ
VCC=25V
+
22µ
A
5V
A
Fig.5 Circuit for measuring output short-circuit current
BA41W12SAT
Regulator ICs
OUT1
VCC
OUT2
CTL
GND
+
VCC=13V
22µ
0.33µ
+
2.0V
V
22µ
V
0.8V
Fig.6 Circuit for measuring mode switching voltage
OUT1
VCC
OUT2
CTL
GND
+
VCC=13V
0.33µ
+
22µ
A
5V
Fig.7 Circuit for measuring input high level current
zApplication circuit
OUTPUT1
+
22µ
Vcc
OUTPUT2
GND
CTL
+
0.33µ
5V
Fig.8
22µ
22µ
BA41W12SAT
Regulator ICs
zOperation notes
(1) Although the circuit examples included in this hand-book are highly recommendable for general use, you should be
thoroughly familiar with circuit characteristics as they relate to your own use conditions. If you intend to change the
number of external circuits, leave an ample margin, taking into account discrepancies in both static and dynamic
characteristics of external parts and Rohm ICs. In addition, please be advised that Rohm cannot provide complete
assurance regarding patent rights.
(2) Operating power supply voltage
When operating within the proper ranges of power supply voltage and ambient temperature, most circuit functions
are guaranteed. Although the rated values of electrical characteristics cannot be absolutely guaranteed,
characteristic values do not change drastically within the proper rages.
(3) Power dissipation (Pd)
Refer to the power dissipation characteristics in Fig.12. If power dissipation exceeds the allowable limit, the fuctionality
of the IC will be degraded (such as reduction of current capacity by increased chip temperature). Make sure to use the
IC within the allowable range of power dissipation with a sufficient margin.
(4) Preventing oscillation at each output and bypass capacitor
To stop output oscillation, make sure to connect a capacitor between GND and each output pin (capacitance of at
least 10µF over the whole operating temperature is recommended). Oscillation can occur if capacitance is susceptible
to temperature. We recommended using a tantalum capacitor with minimal changes in capacitance. Also,
output can be further stabilized by connecting a bypass capacitor of about 0.33µF between VCC and GND.
(5) Overcurrent protection circuit
An overcurrent protection circuit is installed in each output system, based on the respective output current. This
prevents IC destruction due to overcurrent, by limiting the current with a curve shape of “7” in the voltagecurrent graph.The IC is designed with margins so that current flow will be restricted and latching will be prevented
even if a large current suddenly flows current suddenly flows through a large capacitor. Note that theses protection
circuits are only good for preventing damage from sudden accidents. Make sure your design does not case the
protection circuit to operate continuously under transitional conditions (for instance, if output is clamped at 1VF or
higher, short mode circuit operates at 1VF or lower). Note that the capacitance is negatively correlated with
temperature.
(6) Thermal protection circuit
A built-in thermal protection circuit prevents thermal damage to the IC. All outputs are turned off when the circuit
operates, and revert to the original state when the temperature drops to a certain level.
(7) We recommend installing a bypass line in your application if there is a mode where potential difference between each
output and input (VCC) or GND is reversed from the normal state. A reversed mode may cause damage to the IC.
(8) Although the quality of this IC is rigorously controlled, the IC may be destroyed when the applied voltage or the
operating temperature exceeds their absolute maximum ratings. Because short mode or open mode cannot be
specified when the IC is destroyed, be sure to take physical safety measures, such as fusing, if any of the absolute
maximum ratings might be exceeded.
BA41W12SAT
Regulator ICs
(9) Recommended to put diode for protection in case of output pin connected with large load of impedance or reserve
current occurred at initial and output off.
(Example)
Output
(10) When used within a strong magnetic field, be aware that there is a slight possibility of malfunction.
(11) We are confident in recommending the above application circuit example, but we ask that you carefully check the
characteristics of this circuit before using it. If using circuit after modifying other external circuit constants, be careful to
ensure adequate margins for variation between external devices and this IC, including not only static characteristics
but also transient characteristics.
This IC is a bipolar IC which (as shown in Figure 9) has P+ isolation in the P substrate and between the various pins.
A P-N junction is formed form this P layer and the N layer of each pin. For example the relation between each
potentials is as follows,
(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits as well as operation faults and physical damage. Accordingly, you must not use methods
by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an
input pin.
Transistor (NPN)
Resistance
(Pin B)
(Pin A)
B
C
E
GND
N
P
+
P
N
+
P
N
P
N
P substrate
Parasitic diode
P
+
N
N
P substrate
Parasitic diode or
transistor
(Pin B)
GND
+
P
N
GND
(Pin A)
C
Parasitic diode
B
E
GND
GND
Parasitic diode
or transistor
Fig.9 Simplified structure of bipolar IC
BA41W12SAT
Regulator ICs
zElectrical characteristic curves
9
VCC=13V
Ta=25˚C
10
9
VO1
8
7
6
VO2
5
4
3
2
Ta=25˚C
IO=0mA
VO1
VO2
8
OUTPUT VOLTAGE : VO (V)
OUTPUT VOLTAGE : VO (V)
11
7
Over voltage
protection circuit,
ON Vcc=28V (Typ.)
6
5
4
3
2
1
1
0
0
0
500
1000
1500
2000
6
12 18 24 30 36 42 48 54
POWER SUPPLY VOLTAGE : VCC (V)
Fig.10 Output current capacity
characteristics (Typ.)
Fig.11 Output voltage
characteristics (Typ.)
4.5
1.2
1.2
0.8
0.8
1 2 3 4 5
1.778
+ 0.3
− 0.1
φ 3.2 ± 0.1
+ 0.3
− 0.1
2.8
(2.0)
7.0
23.4
17.0 − 0.2
31.5Max.
8.0 ± 0.2
0.7
10.0 − 0.1
0.5 ± 0.1
0.5 + 0.1
1.778
2.85
+ 0.2
− 0.1
17.5
25.8
+ 0.3
+ 0.2
− 0.1
+ 0.4
2.8
1.8 ± 0.2
+ 0.3
− 0.1
8.0 ± 0.2
4.5
φ 3.2 ± 0.1
12.0 ± 0.2
+ 0.3
− 0.1
+ 0.3
− 0.1
1.2 ± 0.2
+ 0.4
− 0.2
17.0
13.5Min.
12.0 ± 0.2
1.8 ± 0.2
zExternal dimentions (Units : mm)
7.0
(2.85)
4.25
8.15
12345
TO220FP-5
24
(1)
20
16
12
(1) With infinte heat sink
(2) With Al heat sink
100×100×2 (mm2)
(3) With Al heat sink
50×50×2 (mm2)
(4) Without heat sink
Note : When using AI
heat sink, a tightening
torque of 6 (kg cm) and
silicon grease is applied
(2)
8
(3)
4
(4)
0
0
OUTPUT CURRENT : IO (mA)
10.0
28
POWER DISSIPATION : Pd (W)
12
TO220FP-5 (V5)
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (˚C)
Fig.12 Thermal derating characteristics