Small Signal Transistor

COMCHIP
Small Signal Transistor
SMD Diodes Specialist
BC846AW-G Thru. BC848CW-G (NPN)
RoHS Device
Features
-Power dissipation
O
PCM: 0.15W (@TA=25 C)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846W=80V
BC847W=50V
BC848W=30V
-Operating and storage junction temperature
range: TJ, TSTG= -55 to +150 OC
SOT-323
0.087 (2.20)
0.079 (2.00)
3
0.053(1.35)
0.045(1.15)
1
2
0.055 (1.40)
Mechanical data
0.047 (1.20)
0.096 (2.45)
0.085 (2.15)
0.039 (1.00)
0.035 (0.90)
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
0.006 (0.15)
0.003 (0.08)
0.004 (0.10) max
0.016 (0.40)
0.008 (0.20)
Circuit diagram
0.018 (0.46)
0.010 (0.26)
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
Dimensions in inches and (millimeter)
1
Maximum Ratings (at Ta=25
2
O
C unless otherwise noted)
Parameter
Symbol
Value
Units
Collector-Base Voltage
BC846W-G
BC847W-G
BC848W-G
VCBO
80
50
30
V
Collector-Emitter Voltage
BC846W-G
BC847W-G
BC848W-G
VCEO
65
45
30
V
Emitter-Base Voltage
BC846W-G / BC847W-G
BC848W-G
VEBO
6
5
V
Collector Current -Continuous
IC
0.1
A
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
O
C
TSTG
-55 to +150
O
C
Storage Temperature Range
REV:A
Page 1
QW-BTR35
Comchip Technology CO., LTD.
COMCHIP
Small Signal Transistor
SMD Diodes Specialist
Electrical Characteristics
(BC846AW-G Thru. BC848CW-G, @TA= 25O C unless otherwise specified)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
Units
Collector-Base Breakdown Voltage
BC846W-G
BC847W-G
BC848W-G
VCBO
IC =10μA , IE=0
80
50
30
V
Collector-Emitter Breakdown Voltage
BC846W-G
BC846W-G
BC848W-G
VCEO
IC =10mA , IB=0
65
45
30
V
BC846W-G, BC847W-G
BC848W-G
VEBO
IE =10μA , IC=0
6
5
V
ICBO
VCB=30V
Emitter-Base Break Voltage
Collector Cutoff Current
DC Current Gain
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
Collector-Emitter Saturation Voltage
hFE
VCE =5V , IC=2mA
VBE(sat)
220
450
800
110
200
420
0.25
0.60
IC =10mA , IB=0.5mA
IC =100mA , IB=0.5mA
IC =10mA , IB=0.5mA
IC =100mA , IB=5mA
VCE =5V , IC=2mA
VCE =5V , IC=10mA
nA
90
150
270
VCE =5V , IC=10μA
VCE(sat)
Base-Emitter Saturation Voltage
15
580
0.7
0.9
660
V
V
700
770
Base-Emitter Voltage
VBE(on)
Transition Frequency
fT
VCE=5V , IC=10mA
f=100MHZ
Cob
VCB =10V , f=1MHZ
4.5
pF
NF
VCE =5V , IC=0.2mA
f =1KHZ , RS=2KΩ
BW=200Hz
10
4
dB
Collector Output Capacitance
Noise Figure
BC846AW,847AW,848AW
BC846BW,847BW,848BW
BC847CW,848CW
100
mV
MHZ
REV:A
Page 2
QW-BTR35
Comchip Technology CO., LTD.
COMCHIP
Small Signal Transistor
SMD Diodes Specialist
Electrical Characteristic Curves (BC846AW-G Thru. BC848CW-G)
Fig.1 Normalized DC Current Gain
Fig.2 Saturation and On voltage
2.0
1
O
VBE(SAT)@IC/IB=10
0.8
1.0
V, Voltage (V )
hFE,Normalized DC Current Gan
TA=25 C
VCE=10V
0.6
VBE(ON)@VCE=10V
0.4
0.2
VCE(SAT)@IC/IB=10
0.2
0.2
1
10
0
0.1
100 200
1
IC, Collector Current (mA)
IC, Collector Current (mAdc)
Fig.3 Collector Saturation Region
Fig.4 Base-Emitter Temperature Coefficient
2 00
mA
0m A
1.2
TA=25 OC
0.8
0.4
0
0.01
0.1
O
-55 to +125 C
O
IC =
IC = 1 0
IC=50mA
IC=20mA
θVB, Te mperature Coefficient ( mV / C)
0.8
IC=10mA
V CE, Collector-Emitter Voltage (V )
2
1.6
1
1.2
1.6
2.0
2.4
2.8
10 20
0.1
1
10
100
IC, Collector Current (mA)
IB, Base Current (mA)
Fig.5 Capacitance
Fig.6 Current Gain Bandwidth Product
400
f T , C u r rent- Gain-Bandwidth Product (MHZ)
10
O
(p F)
C, Capa ciance
t
TA=25 C
Cib
Cob
1
0.4
100
10
1
10
40
O
TA=25 C
VCE=10V
100
20
0.5
VR, Reverse Voltage (V)
1
10
50
IC, Collector Current (mA)
REV:A
Page 3
QW-BTR35
Comchip Technology CO., LTD.
COMCHIP
Small Signal Transistor
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-323
SOT-323
SYMBOL
A
B
C
d
D
D1
D2
(mm)
2.25 ± 0.10
2.55 ± 0.10
1.19 ± 0.10
1.55 + 0.10
178 ± 1.00
54.40 ± 0.40
13.0 ± 0.20
(inch)
0.089 ± 0.004
0.100 ± 0.004
0.047 ± 0.004
0.061 + 0.004
7.008 ± 0.039
2.142 ± 0.016
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138± 0.002
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004
0.315 + 0.012 /–0.004
0.374 ± 0.039
REV:A
Page 3
QW-BTR35
Comchip Technology CO., LTD.
COMCHIP
Small Signal Schottky Diodes
SMD Diodes Specialist
Marking Code
3
Marking Code
Part Number
BC846AW-G
1A
BC847AW-G
1E
BC848AW-G
1J
BC846BW-G
1B
BC847BW-G
1F
BC848BW-G
1K
BC847CW-G
1G
BC848CW-G
1L
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-323
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.30
0.051
C
1.94
0.076
D
2.74
0.108
A
C
D
B
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
3000
7
Case Type
SOT-323
REV:A
Page 1
QW-BTR35
Comchip Technology CO., LTD.