1.5V Drive Pch MOSFET RQ1A060ZP zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT8 3.0 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) 0.8 2.4 2.8 (8) (7) (6) (5) (1) (2) (3) (4) 0.17 0.65 0.32 Abbreviated symbol : YH Each lead has same dimensions zEquivalent circuit zApplications Switching (8) (7) (6) (5) zPackaging specifications Package Type Taping TR Code Basic ordering unit (pieces) ∗2 3000 RQ1A060ZP ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Sorce (2) Sorce (3) Sorce (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 ∗1 ∗2 Limits −12 ±10 ±6 ±24 −1 −24 1.5 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 83.3 °C / W ∗ Mounted on a ceramic board. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.05 - Rev.A Data Sheet RQ1A060ZP zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − − ∗ Static drain-source on-state RDS (on) resistance − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Typ. − − − − 16 22 28 Max. ±10 − −1 −1.0 23 31 42 Unit µA V µA V mΩ mΩ mΩ Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −6A, VGS= −4.5V ID= −3A, VGS= −2.5V ID= −3A, VGS= −1.8V − 39 78 mΩ ID= −1.2A, VGS= −1.5V 7.5 − − − − − − − − − − − 2800 340 310 12 105 400 230 34 6.0 5.0 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC VDS= −6V, ID= −6A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −3A VGS= −4.5V RL 2Ω RG=10Ω VDD −6V RL 1Ω ID= −6A RG=10Ω VGS= −4.5V ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions IS= −6A, VGS=0V 2/4 2009.05 - Rev.A Data Sheet RQ1A060ZP zElectrical characteristic curves 6 Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 4 3 5 DRAIN CURRENT : -ID [A] 2 VGS= -10V VGS= -1.8V VGS= -1.5V 4 3 2 1 1 VGS= -1.2V 0 0 0 0.4 0.6 0.8 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.001 0 1 2 4 6 8 10 0 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0.1 1 10 1 1 DRAIN-CURRENT : -ID [A] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] 100 10 1 1 VGS= -1.5V Pulsed 10 Resistance vs. Drain Current(Ⅲ) 10 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/4 10 DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 1 Fig.6 Static Drain-Source On-State 1 1 0.1 10 Resistance vs. Drain Current(Ⅱ) Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 2 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) VGS= -1.8V Pulsed 10 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.1 10 1000 VGS= -4.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=25°C Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 DRAIN-SOURCE VOLTAGE : -VDS[V] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 VDS= -6V Pulsed VGS= -1.2V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[mΩ] DRAIN CURRENT : -ID [A] 5 10 Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 6 100 VDS= -6V Pulsed 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0.1 1 DRAIN-CURRENT : -ID [A] 10 Fig.9 Forward Transfer Admittance vs. Drain Current 2009.05 - Rev.A Data Sheet RQ1A060ZP 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.2 0.4 0.6 0.8 1 ID = -6.0A 60 40 20 tf 100 10 tr td(on) 1 0 0 2 4 6 8 0.01 10 0.1 GATE-SOURCE VOLTAGE : -VGS[V] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 10 DRAIN-CURRENT : -ID [A] Fig.12 Switching Characteristics Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] 1000 ID = -3.0A 1.2 5 Ta=25°C VDD = -6V VGS=-4.5V RG=10Ω Pulsed td(off) 80 0.01 0 10000 Ta=25°C Pulsed SWITCHING TIME : t [ns] VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 10 3 2 Ta=25°C VDD = -6V ID = -6.0A RG=10Ω Pulsed 1 0 0 10 20 30 Coss 100 Ta=25°C f=1MHz VGS=0V 0.01 40 Ciss 1000 Crss 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuits VGS Pulse Width ID VDS VGS 10% 50% RL D.U.T. RG 90% 50% 10% VDD VDS 10% 90% td(on) 90% td(off) tr ton tr toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG ID VDS VGS Qg RL VGS IG(Const.) D.U.T. Qgs Qgd RG VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveforms zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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