SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESD9B5V ESD PROTECTION DIODE Features z z z z z z z z z Small SOD-923 Package Bi-directional Configurations Low Leakage Fast Response Time < 1 ns Protects One Power or I/O Port ESD Rating of Class 3 (>16KV) per Human Body Model ESD Protection to IEC 61000-4-2 Level 4 EFT Protection to IEC 61000-4-4 Level 4 RoHS Compliant in Lead-Free Versions Applications z z z z Communication Systems & Cellular Phones Personal Digital Assistant (PDA) Digital Cameras Power Supplies Absolute Maximum Ratings Parameter IEC 61000-4-2 (ESD) Symbol Contact IEC 61000-4-2 (EFT) Value Units ±8 kV 40 A Total Power Dissipation on FR-5 Board (Note 1) @ TA=25℃ PD 150 mW Thermal Resistance, Junction-to-Ambient RθJA 400 ℃/W Junction and Storage Temperature Range TJ,TSTG -55 to 150 ℃ Lead Solder Temperature – Maximum (10 Second Duration) TL 260 ℃ Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0*0.75*0.62 in. ------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESD9B5V Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Device ESD9B5V IT(mA) VRWM IR(uA) VBR (V) @ IT Device (V) @ VRWM (Note 2) Marking Max Max Min Max 5.0 1.0 5.8 7.8 C (pF) Max 1.0 15 2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃ Figure 1. Typical Breakdown Voltage versus Temperature Fig 2. Typical Leakage Current versus Temperature ------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESD9B5V Package Dimensions SOD-923 MILLMETERS DIM INCHES MIN NOM MAX MIN NOM MAX A 0.36 0.40 0.43 0.014 0.016 0.017 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.07 0.12 0.17 0.003 0.005 0.007 D 0.75 0.80 0.85 0.030 0.031 0.033 E 0.55 0.60 0.65 0.022 0.024 0.026 HE 0.95 1.00 1.05 0.037 0.039 0.041 L 0.05 0.10 0.15 0.002 0.004 0.006 ------------------------------------------------------------------------------------------------------------------------SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD