1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF (Tc=25°C) QC Features Package RoHS Compliant 1200 V Schottky rectifier 210 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500 = = = 1200 V 30 A 58 nC PIN 1 PIN 2 NC PIN 3 1 2 3 TO – 257 (Isolated Base-plate Hermetic Package) Advantages Applications High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 I t value Power dissipation Operating and storage temperature Symbol VRRM IF IF IF(RMS) Conditions IF,SM IF,max 2 ∫i dt Ptot Tj , Tstg TC = 25 °C TC ≤ 190 °C TC ≤ 190 °C Values 1200 30 9.4 16 Unit V A A A TC = 25 °C, tP = 10 ms 65 A TC = 25 °C, tP = 10 µs 280 20 230 -55 to 210 A 2 AS W °C TC = 25 °C, tP = 10 ms TC = 25 °C Electrical Characteristics at Tj = 210 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Conditions IF = 10 A, Tj = 25 °C IF = 10 A, Tj = 210 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 210 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 210 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 1.6 2.3 1 55 58 95 max. Unit V 20 300 µA nC < 49 ns 884 79 63 pF 1.08 °C/W 0.6 Nm Thermal Characteristics Thermal resistance, junction - case RthJC Mechanical Properties Mounting torque Dec 2014 M http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg1 of 4 1N8028-GA Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Power Derating Curve Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs) (Considering worst case Zth conditions ) Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 6: Typical Capacitive Energy vs Reverse Voltage Characteristics Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg2 of 4 1N8028-GA Figure 7: Current vs Pulse Duration Curves at TC = 190 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-257 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg3 of 4 1N8028-GA Revision History Date Revision Comments 2014/08/26 1 Updated Electrical Characteristics 2012/04/24 0 Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg4 of 4 1N8028-GA SPICE Model Parameters This is a secure document. Copy this code from the SPICE model PDF file on our website into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of 1N8028-GA SPICE Model * .SUBCKT 1N8028 ANODE KATHODE D1 ANODE KATHODE 1N8028_25C; Call the Schottky Diode Model D2 ANODE KATHODE 1N8028_PIN; Call the PiN Diode Model .MODEL 1N8028_25C D + IS 1.74E-13 RS 0.05105 + TRS1 0.005 TRS2 1.68E-5 + N 1.2637323 IKF 1.884319 + EG 1.2 XTI 3 + CJO 1.15E-09 VJ 0.44 + M 1.5 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 20 TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .MODEL 1N8028_PIN D + IS 5.15E-15 RS 0.2 + N 3.1605 IKF 0.00055844 + EG 3.23 XTI 3 + FC 0.5 TT 0 + BV 1200 IBV 1.00E-03 + VPK 1200 IAVE 20 + TYPE SiC_PiN .ENDS * * End of 1N8028-GA SPICE Model Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/ Pg1 of 1