Die Datasheet GB50SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 100 A 158 nC Features 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF Die Size = 4.5 mm x 4.5 mm Advantages Applications Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Automotive Traction Inverters Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current 2 Symbol VRRM IF IF IF(RMS) IF,SM IF,max 2 ∫i dt I t value Power dissipation Operating and storage temperature Ptot Tj , Tstg Conditions Values 1200 100 50 87 350 313 1625 450 300 620 -55 to 175 TC = 25 °C, RthJC = 0.24 TC ≤ 135 °C, RthJC = 0.24 TC ≤ 135 °C, RthJC = 0.24 TC = 25 °C, tP = 10 ms TC = 135 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 135 °C, tP = 10 ms TC = 25 °C, RthJC = 0.24 Unit V A A A A A A2s W °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Total capacitive charge QC Switching time ts Total capacitance C Feb 2015 Conditions IF = 50 A, Tj = 25 °C IF = 50 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 175 °C VR = 400 V IF ≤ IF,MAX VR = 960 V dIF/dt = 200 A/μs VR = 400 V Tj = 175 °C VR = 960 V VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 1.5 2.4 25 100 158 247 max. 1.8 3.0 1000 3000 Unit V µA nC 50 ns 2940 203 142 pF http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 4 Die Datasheet GB50SLT12-CAL Figures: Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Capacitive Energy vs Reverse Voltage Characteristics Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg2 of 4 Die Datasheet GB50SLT12-CAL Mechanical Parameters Die Dimensions 4.5 x 4.5 Anode Pad Size 4.24 x 4.24 Die Area total / active 20.25/17.64 mm2 Die Thickness 360 µm Wafer Size 100 mm Flat Position 0 deg Die Frontside Passivation Polyimide Anode Pad Metallization 4000 nm Al Backside Cathode Metallization 400 nm Ni + 200 nm Au Die Attach Electrically conductive glue or solder Wire Bond Al ≤ 380 µm Reject ink dot size Φ ≥ 0.3 mm Store in original container, in dry nitrogen, Recommended storage environment < 6 months at an ambient temperature of 23 °C Chip Dimensions: DIE METAL WIRE BONDABLE Feb 2015 A [mm] B [mm] C [mm] D [mm] E [mm] F [mm] http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ 4.5 4.5 4.24 4.24 4.2 4.2 Pg3 of 4 Die Datasheet GB50SLT12-CAL Revision History Date 2015/02/12 2014/09/12 Revision 3 2 Comments Inserted Mechanical Parameters Updated Electrical Characteristics 2013/11/12 2013/09/18 1 0 Updated Electrical Characteristics Initial Release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg4 of 4 Die Datasheet GB50SLT12-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB50SLT12-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GB50SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * * * * * * $Revision: 1.0 $Date: 20-SEP-2013 $ $ GeneSiC Semiconductor Inc. 43670 Trade Center Place Ste. 155 Dulles, VA 20166 * * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. ALL RIGHTS RESERVED * * * * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE." Models accurate up to 2 times rated drain current. * * Start of GB50SLT12-CAL SPICE Model * .SUBCKT GB50SLT12 ANODE KATHODE D1 ANODE KATHODE GB50SLT12_SCHOTTKY D2 ANODE KATHODE GB50SLT12_SURGE .MODEL GB50SLT12_SCHOTTKY D + IS 1.99E-16 RS + N 1 IKF + EG 1.2 XTI + TRS1 0.0042 TRS2 + CJO 3.86E-09 VJ + M 0.48198551 FC + TT 1.00E-10 BV + IBV 1.00E-03 VPK + IAVE 50 TYPE + MFG GeneSiC_Semi .MODEL GB50SLT12_SURGE D + IS 1.54E-19 RS + TRS1 -0.004 N + EG 3.23 IKF + XTI 0 FC + TT 0 BV + IBV 1.00E-03 VPK + IAVE 50 TYPE .ENDS 0.015652965 1000 3 1.3E-05 1.362328465 0.5 1200 1200 SiC_Schottky 0.1 3.941 19 0.5 1200 1200 SiC_PiN * * End of GB50SLT12-CAL SPICE Model Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1