Die Datasheet GAP05SLT80-CAL Silicon Carbide Power Schottky Diode VRRM IF QC = = = 8000 V 50 mA 8 nC Features 8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF Die Size = 2.4 mm x 2.4 mm Advantages Applications Down Hole Oil Drilling, Geothermal Instrumentation High Voltage Multipliers Military Power Supplies Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Electrical Specifications Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current RMS forward current Power dissipation Operating and storage temperature Symbol VRRM IF IF(RMS) Ptot Tj , Tstg Conditions Values 8000 50 87 0.2 -55 to 175 TC = 25 °C Unit V mA mA W °C Electrical Characteristics Parameter Symbol Conditions IF = 50 mA, Tj = 25 °C IF = 50 mA, Tj = 175 °C VR = 8000 V, Tj = 25 °C VR = 8000 V, Tj = 125 °C Diode forward voltage VF Reverse current IR Total capacitive charge QC VR = 1000 V C VR = 1 V, f = 1 MHz, Tj = 25 °C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C Total capacitance Feb 2015 min. Values typ. 4.6 12 3.8 5.3 8 25 8 6 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ max. Unit V µA nC pF Pg1 of 4 Die Datasheet GAP05SLT80-CAL Figures: Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg2 of 4 Die Datasheet GAP05SLT80-CAL Mechanical Parameters Die Dimensions 2.4 x 2.4 mm2 Anode pad size Φ 0.98 mm 5.76/0.75 mm2 Die Thickness 450 µm Wafer Size 76.2 mm 0 deg Die Area total / active Flat Position Die Frontside Passivation Polyimide Anode Pad Metallization 4000 nm Al Backside Cathode Metallization 400 nm Ni + 200 nm Au Die Attach Electrically conductive glue or solder Wire Bond Al ≤ 130 µm Reject ink dot size Φ ≥ 0.3 mm Store in original container, in dry nitrogen, Recommended storage environment < 6 months at an ambient temperature of 23 °C Chip Dimensions: DIE METAL Feb 2015 A [mm] B [mm] C [mm] http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ 2.4 2.4 0.98 Pg3 of 4 Die Datasheet GAP05SLT80-CAL Revision History Date 2015/02/12 2014/09/15 Revision 1 0 Comments Inserted Mechanical Parameters Initial Release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg4 of 4 Die Datasheet GAP05SLT80-CAL SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GAP05SLT80-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GAP05SLT80-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.1 $ * $Date: 15-SEP-2014 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GAP05SLT80-CAL SPICE Model .SUBCKT GAP05SLT80 ANODE KATHODE R1 ANODE INT R=((TEMP-24)*0.81); Temperature Dependant Resistor D1 INT KATHODE GAP05SLT80_25C .MODEL GAP05SLT80_25C D; Model of GAP05SLT80-220 Device at 25 C + IS 14.067E-15 + N 1.3760 + RS 42.6 + IKF 157.39E-6 + EG 1.2 + XTI -85 + CJO 21.838E-12 + M 0.258 + VJ 3.198 + BV 9000 + IBV 1E-3 + TT 1.0000E-10 + VPK 8000 + IAVE 3E-2 + TYPE SiC_Schottky + MFG GeneSiC_Semiconductor .ENDS * * End of GAP05SLT80-CAL SPICE Model Sep 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 1