Cree® EZ700-n™ Gen 2 LED Data Sheet (Cathode-up) CxxxEZ700-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES APPLICATIONS • • EZBright Power Chip LED Rf Performance General Illumination − 450 nm - 240+ mW – Aircraft − 460 nm - 240+ mW – Decorative Lighting − 470 nm - 240+ mW – Task Lighting − 527 nm - 90+ mW – Outdoor Illumination • Lambertian Radiation – Projection Lighting • Conductive Epoxy, Solder Paste or Preforms, • White LEDs or Flux Eutectic Attach • Crosswalk Signals • Low Forward Voltage – 3.35 V typ at 350 mA • Backlighting • Single Wire Bond Structure • Automotive • Dielectric Passivation Across Epi Surface CxxxEZ700-Sxx000-2 Chip Diagram C CPR3DW Rev Data Sheet: Mesa (Junction), 650 x 650 µm Cathode (-), 150 x 150 µm 680 x 680 µm Thickness, 170 µm Top View Backside Ohmic Metallization Anode (+) Side View Subject to change without notice. www.cree.com Bottom View 1 Maximum Ratings at TA = 25°C Notes 1, 2 & 3 CxxxEZ700-Sxx000-2 DC Forward Current 750 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1000 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Part Number Note 2 Forward Voltage (Vf, V) Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ700-Sxx000-2 3.0 3.35 3.7 2 20 C460EZ700-Sxx000-2 3.0 3.35 3.7 2 21 C470EZ700-Sxx000-2 3.0 3.35 3.7 2 22 C527EZ700-Sxx000-2 3.1 3.5 3.8 2 35 Mechanical Specifications CxxxEZ700-Sxx000-2 Description Dimension Tolerance P-N Junction Area (μm) 650 x 650 ±35 Chip Area (μm) 680 x 680 ±35 170 ±25 Chip Thickness (μm) Top Au Bond Pad (μm) 150 x 150 ±25 Au Bond Pad Thickness (μm) 3.0 ±1.5 Back Ohmic Metal Area (μm) 680 x 680 ±35 3.0 ±1.5 Back Ohmic Metal Thickness (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 800 700 Maximum Operating Current (mA) 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. 600 500 400 Rth j-a = 10 °C/W Rth j-a = 15 °C/W Rth j-a = 20 °C/W Rth j-a = 25 °C/W 300 200 100 0 25 50 75 Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700-n are trademarks of Cree, Inc. 2 CPR3DW Rev C 100 125 150 Ambient Temperature (°C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ700-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ700-Sxx000-2) orders may be filled with any or all bins (CxxxEZ700-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. C450EZ700-S24000-2 C450EZ700-0621-2 C450EZ700-0622-2 C450EZ700-0623-2 C450EZ700-0624-2 C450EZ700-0617-2 C450EZ700-0618-2 C450EZ700-0619-2 C450EZ700-0620-2 C450EZ700-0613-2 C450EZ700-0614-2 C450EZ700-0615-2 C450EZ700-0616-2 C450EZ700-0609-2 C450EZ700-0610-2 C450EZ700-0611-2 C450EZ700-0612-2 C450EZ700-0605-2 C450EZ700-0606-2 C450EZ700-0607-2 C450EZ700-0608-2 350 mW Radiant Flux 330 mW 310 mW 280 mW 240 mW 445 nm 447.5 nm 450 nm Dominant Wavelength 452.5 nm 455 nm C460EZ700-S24000-2 C460EZ700-0621-2 C460EZ700-0622-2 C460EZ700-0623-2 C460EZ700-0624-2 C460EZ700-0617-2 C460EZ700-0618-2 C460EZ700-0619-2 C460EZ700-0620-2 C460EZ700-0613-2 C460EZ700-0614-2 C460EZ700-0615-2 C460EZ700-0616-2 C460EZ700-0609-2 C460EZ700-0610-2 C460EZ700-0611-2 C460EZ700-0612-2 C460EZ700-0605-2 C460EZ700-0606-2 C460EZ700-0607-2 C460EZ700-0608-2 350 mW Radiant Flux 330 mW 310 mW 280 mW 240 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700-n are trademarks of Cree, Inc. 3 CPR3DW Rev C 465 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ700-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ700-Sxx000-2) orders may be filled with any or all bins (CxxxEZ700-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. Radiant Flux C470EZ700-S24000-2 C470EZ700-0617-2 C470EZ700-0618-2 C470EZ700-0619-2 C470EZ700-0620-2 C470EZ700-0613-2 C470EZ700-0614-2 C470EZ700-0615-2 C470EZ700-0616-2 C470EZ700-0609-2 C470EZ700-0610-2 C470EZ700-0611-2 C470EZ700-0612-2 C470EZ700-0605-2 C470EZ700-0606-2 C470EZ700-0607-2 C470EZ700-0608-2 330 mW 310 mW 280 mW 240 mW 465 nm 467.5 nm 470 nm 472.5 nm 475 nm Dominant Wavelength Radiant Flux C527EZ700-S9000-2 150 mW 130 mW 110 mW C527EZ700-0410-2 C527EZ700-0411-2 C527EZ700-0412-2 C527EZ700-0407-2 C527EZ700-0408-2 C527EZ700-0409-2 C527EZ700-0404-2 C527EZ700-0405-2 C527EZ700-0406-2 C527EZ700-0401-2 C527EZ700-0402-2 C527EZ700-0403-2 90 mW 520 nm 525 nm 530 nm Dominant Wavelength 535 nm Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700-n are trademarks of Cree, Inc. 4 CPR3DW Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the EZBright Power Chip LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Dominant Wavelength Shift vs. Junction Temperature Voltage Shift vs. Junction Temperature Forward Current vs. Forward Voltage 500 Voltage Shift(nm) (V) DW Shift If (mA) 400 300 200 100 0 0 1 2 3 4 5 6 0.100 5 0.000 4 -0.100 3 2 -0.200 1 -0.300 0 -0.400 -1 -0.500 -2 -0.600 25 25 50 50 Vf (V) 110% 175% 105% 150% 100% 125% 100% 75% 50% 25% 0% 95% 90% 85% 80% 75% 70% 0 65% 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 25 50 If (mA) 5 8 4 DW Shift (nm) DW DW Shift Shift (nm) (nm) 6 12 0 -4 -8 100 125 150 Dominant Wavelength Shift vs. Junction Temperature 16 4 75 Junction Temperature (°C) Wavelength Shift vs. Forward Current -12 -16 150 150 Relative Light Intensity vs. Junction Temperature 200% Relative Intensity Relative Relative Intensity Intensity Relative Intensity vs. Forward Current 75 100 125 75 100 125 Junction Temperature (°C) Junction Temperature (°C) 3 2 1 0 -1 0 -2 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 25 If (mA) 50 75 100 125 150 Junction Temperature (°C) Relative Light Intensity vs. Junction Temperature 110% Relative Intensity 105% 100% 95% Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 90% Cree logo are registered trademarks, and EZBright, EZ, and EZ700-n are trademarks of Cree, Inc. 5 CPR3DW Rev C 85% 80% 75% Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ700-n are trademarks of Cree, Inc. 6 CPR3DW Rev C Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips