SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD MSQA6V1W5 STANDARD CAPACITANCE TVS Features z z z z z z z Small SOT-353 SMT Package Peak Power Dissipation 200W @8 x 20 us Pulse Low Leakage Current < 1uA @3 Volts Fast Response Time < 1 ns Low Capacitance ESD Protection to IEC 61000-4-2 Level 4 RoHS Compliant in Lead-Free Versions Applications z z z z Instrumentation Equipement Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Absolute Maximum Ratings Parameter Symbol Value Units Peak Power Dissipation (Note 1.) @TL = 25°C PPK 200 W Power Dissipation PD 150 mW TJmax 150 °C TJ -55 to 150 °C TSTG -55 to 150 °C Maximum Junction Temperature Operating Junction Temperature Range Storage Temperature Range 1. 8 X 20 us, non–repetitive Figure 1. MSQA6V1W5 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) VBR (V) VF (V) Capacitance @ VRWM @ 1 mA @ 200mA @ OV Bias(pF)(note 2) Device Marking Max Max Min Nom Max Max Typ Max MSQA6V1W5 WE 3 1.0 6.1 6.6 7.2 1.25 -- 90 *Surge current waveform per Figure 1. 2. Capacitance of one diode at f=1MHz,VR=0V, TA=25°C． Fig1. Pulse Waveform MSQA6V1W5 Fig2. Power Derating Package Dimensions SOT-353 Dim Millimeters Inches MIN NOM MAX MIN NOM MAX A 0.80 --- 1.10 0.031 --- 0.043 A1 0 --- 0.1 0 --- 0.004 A2 0.8 --- 1 0.031 --- 0.039 b 0.15 --- 0.3 0.006 --- 0.012 c 0.1 --- 0.18 0.004 --- 0.007 D 1.8 --- 2.2 0.071 --- 0.086 E 1.15 --- 1.35 0.045 --- 0.053 e 0.65 Typ 0.025 Typ H 1.8 --- 2.4 0.071 --- 0.094 Q1 0.1 --- 0.4 0.004 --- 0.016