Cree® TR2227™ LEDs Data Sheet CxxxTR2227-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. FEATURES APPLICATIONS • • Rectangular LED Rf Performance − 450 & 460 nm � –– Mobile Backlighting – 0.8 mm, 0.6 mm & 0.4 mm sideview packages TR-21™ – 21 mW min. − Mobile Appliances 527 nm − Digital Cameras − Car Navigation Systems TR-06™ - 6 mW min. • Epoxy Die Attach • Low Forward Voltage - 3.3 V Typical at 20 mA • sideview packages • 1000-V ESD Threshold Rating − Portable PCs • InGaN Junction on Thermally Conductive SiC Substrate LCD Backlighting – 0.8 mm, 0.6 mm & 0.4 mm − Monitors • LED Video Displays CxxxTR2227-Sxx00 Chip Diagram Bottom View Top View Die Cross Section A CPR3EF Rev Data Sheet: 220 x 270 μm Backside Anode (+) 80 μm Bottom Surface 190 x 240 μm Junction 230 x 190 μm Cathode (-) 80 x 80 μm Subject to change without notice. www.cree.com t = 50 μm 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR2227-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 70 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range Electrostatic Discharge Threshold (HBM) -40°C to +100°C 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450TR2227-Sxx00 2.7 3.3 3.7 2 20 C460TR2227-Sxx00 2.7 3.3 3.7 2 21 C527TR2227-Sxx00 2.9 3.4 3.9 2 34 Mechanical Specifications Description CxxxTR2227-Sxx00 Dimension Tolerance P-N Junction Area (μm) 190 x 230 ±35 Chip Area (μm) 220 x 270 ±35 Chip Thickness (μm) 50 ±15 Au Bond Pad Diameter Anode (μm) 80 -5, +15 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 80 x 80 -5, +15 190 x 240 ±35 Au Bond Pad Area Cathode (μm) Bottom Area (μm) Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance E. 4. Specifications are subject to change without notice. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc. 2 CPR3EF Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for CxxxTR2227-Sxx00 LED chips are sorted to the Radiant Flux and Dominant Wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR2227-Sxx00) orders may be filled with any or all bins (CxxxTR2227-xxxx) contained in the kit. All Radiant Flux (RF) values and all dominant wavelength values shown are specified at If = 20 mA. TR 450 nm Kits Radiant Flux TR-21 C450TR2227-S2100 C450TR2227-0213 C450TR2227-0214 C450TR2227-0215 C450TR2227-0216 C450TR2227-0209 C450TR2227-0210 C450TR2227-0211 C450TR2227-0212 C450TR2227-0205 C450TR2227-0206 C450TR2227-0207 C450TR2227-0208 27.0 mW 24.0 mW 21.0 mW 445 nm 447.5 nm 450 nm 455 nm 452.5 nm Dominant Wavelength TR 460 nm Kits Radiant Flux TR-21 C460TR2227-S2100 C460TR2227-0213 C460TR2227-0214 C460TR2227-0215 C460TR2227-0216 C460TR2227-0209 C460TR2227-0210 C460TR2227-0211 C460TR2227-0212 C460TR2227-0205 C460TR2227-0206 C460TR2227-0207 C460TR2227-0208 27.0 mW 24.0 mW 21.0 mW 455 nm 457.5 nm 460 nm 465 nm 462.5 nm Dominant Wavelength TR 527 nm Kits C527TR2227-S0600 TR-06 C527TR2227-0213 C527TR2227-0214 C527TR2227-0215 C527TR2227-0210 C527TR2227-0211 C527TR2227-0212 C527TR2227-0207 C527TR2227-0208 C527TR2227-0209 C527TR2227-0204 C527TR2227-0205 C527TR2227-0206 C527TR2227-0201 C527TR2227-0202 C527TR2227-0203 Radiant Flux 10.0 mW 9.0 mW 8.0 mW 7.0 mW 6.0 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc. 3 CPR3EF Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Relative Light Inte 100% 75% 50% 25% Characteristic Curves 0% 0 5 10 15 20 25 30 These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant If (mA) flux and dominant wavelength bins. Forward Current Wavelength Shiftvs. vs.Forward ForwardVoltage Current Forward Current vs. Forward Voltage 30 14 If (mA) Shift (nm) Dominant Wavelength 30 25 If (mA) 20 15 10 5 1 2 3 4 10 20 8 6 15 4 10 2 0 5 -2 0 -4 0 0 12 25 5 0 0 5 1 10 2 Relative Intensity vs. Forward Current Relative Intensity vs. Wavelength 4 20 5 30 25 Relative Intensity vs. Wavelength 150% 100% 100% 125% 80% 80% Relative Light Intensity RelativeLight LightIntensity Intensity Relative 3 Vf (V) If (mA) Vf (V) 100% 60% 75% 40% 50% 20% 25% 0% 0% 15 60% 40% 20% 0% 0 300 350 5 400 10 450 15 500 550 20 600 25 650 30 700 300 350 400 If (mA) Wavelength 450 500 550 600 650 700 Wavelength Wavelength Shift vs. Forward Current Dominant Wavelength Shift (nm) 14 12 10 8 6 4 2 0 -2 -4 0 5 10 15 20 25 30 If (mA) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc. 4 CPR3EF Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2227 are trademarks of Cree, Inc. 5 CPR3EF Rev A Cree, Inc. 4600 Silicon Drive Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips