ROHM MP6K12

Data Sheet
4V Drive Nch + Nch MOSFET
MP6K12
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
MPT6
(Duel)
Features
1) Low on-resistance.
2) High power package(MPT6).
3) Low voltage drive(4V drive).
(6)
(5)
(4)
(1)
(2)
(3)
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
Taping
TCR
1000

MP6K12
(6)
(5)
(4)
∗1
∗2
∗2
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Drain current
Source current
(Body Diode)
Continuous
ID
Pulsed
Continuous
IDP
Is
*1
Pulsed
Isp
*1
Power dissipation
Channel temperature
Range of storage temperature
PD
Tch
Tstg
*2
5
A
12
1.6
A
A
12
A
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
2.0
W / TOTAL
1.4
W / ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
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1/6
2011.04 - Rev.A
Data Sheet
MP6K12
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol
Min.
Typ.
Max.
Unit
IGSS


10
A
Drainsource breakdown voltage
V (BR)DSS
30


V
ID=1mA, VGS=0V
Zero gate voltage drain current
IDSS


1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0

2.5
V
VDS=10V, ID=1mA
Static drainsource onstate
resistance
RDS (on)*

30
42
ID=5.0A, VGS=10V

40
56
m ID=5.0A, VGS=4.5V

45
63
l Yfs l *
2.5


S
ID=5.0A, VDS=10V
Input capacitance
Ciss

250

pF
VDS=10V
Output capacitance
Coss

90

pF
VGS=0V
Reverse transfer capacitance
Crss

45

pF
f=1MHz
Turnon delay time
td(on) *

6

ns
ID=2.5A, VDD 15V
tr *

27

ns
VGS=10V
td(off) *

26

ns
RL=6.0
Parameter
Gatesource leakage
Forward transfer admittance
Rise time
Turnoff delay time
Conditions
VGS=20V, VDS=0V
ID=5.0A, VGS=4.0V
tf *

5

ns
RG=10
Total gate charge
Qg *

4.0

nC
ID=5.0A, VDD 15V
Gatesource charge
Gatedrain charge
Qgs *
Qgd *


1.2
1.2


nC
nC
VGS=5V
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.


1.2
Unit
V
Conditions
Is=5.0A, VGS=0V
*Pulsed
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2/6
2011.04 - Rev.A
Data Sheet
MP6K12
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics ( I )
Fig.2 Typical Output Characteristics (II)
5
5
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 3.0V
VGS= 2.5V
4
DRAIN CURRENT : ID[A]
4
DRAIN CURRENT : ID[A]
Ta=25°C
Pulsed
VGS= 2.5V
3
2
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 2.8V
3
2
1
VGS= 2.0V
1
VGS= 2.0V
Ta=25°C
Pulsed
0
0
0
0.2
0.4
0.6
0.8
1
0
2
DRAIN-SOURCE VOLTAGE : VDS[V]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mW]
DRAIN CURRENT : ID[A]
8
10
Ta=25°C
Pulsed
VDS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
VGS= 4.0V
VGS= 4.5V
VGS= 10V
100
.
10
0.001
0
1
2
0.1
3
1
10
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (II)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current (III)
1000
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mW]
VGS= 10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mW]
6
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( I )
Fig.3 Typical Transfer Characteristics
10
1
4
DRAIN-SOURCE VOLTAGE : VDS[V]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
VGS= 4.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
0.1
1
10
0.1
DRAIN-CURRENT : ID[A]
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1
10
DRAIN-CURRENT : ID[A]
3/6
2011.04 - Rev.A
Data Sheet
MP6K12
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current (IV)
Fig.8 Forward Transfer Admittance vs. Drain Current
10
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mW]
VGS= 4.0V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
0.1
1
VDS= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
10
0.1
Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mW]
VGS=0V
Pulsed
SOURCE CURRENT : Is [A]
10
100
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
ID= 2.5A
80
ID= 5.0A
60
40
20
0
0
0.5
1
1.5
0
5
SOURCE-DRAIN VOLTAGE : VSD [V]
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10
1000
tf
GATE-SOURCE VOLTAGE : VGS [V]
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
1
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
100
td(on)
10
tr
1
8
6
4
Ta=25°C
VDD= 15V
ID= 5.0A
RG=10Ω
Pulsed
2
0
0.01
0.1
1
10
0
DRAIN-CURRENT : ID[A]
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2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
4/6
2011.04 - Rev.A
Data Sheet
MP6K12
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
1000
100
Operation in this area is limited by RDS(ON)
(VGS=10V)
Ciss
DRAIN CURRENT : ID (A)
CAPACITANCE : C [pF]
10
100
Crss
Coss
PW =100us
1
PW = 1ms
PW =10ms
0.1
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Ta=25°C
f=1MHz
VGS=0V
10
DC operation
0.01
0.01
0.1
1
10
100
0.1
DRAIN-SOURCE VOLTAGE : VDS[V]
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
0.001
0.0001 0.001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=89.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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5/6
2011.04 - Rev.A
Data Sheet
MP6K12
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2　Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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6/6
2011.04 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
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R1120A