RU3520H N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 40V/9A, RDS (ON) =14mΩ (Typ.) @ VGS=10V RDS (ON) =21mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested SOP-8 • Lead Free and Green Available Applications • High Frequency Buck Converters for Computer Processor Power. •High Frequency Isolated DC-DC Converters. Absolute Maximum Ratings Symbol N-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 9 A TC=25°C 36 TC=25°C 9 TC=70°C 7.3 TC=25°C 2.5 TC=70°C 1.6 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient ① A A W 50 °C/W 100 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 www.ruichips.com RU3520H Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) ④ Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA RU3520H Min. Typ. 1 TJ=85°C VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V 30 1.5 Unit V 40 VDS= 40V, VGS=0V Gate Threshold Voltage Max. 2 µA 2.7 V ±100 nA VGS= 10V, IDS=9A 14 17 mΩ VGS= 4.5V, IDS=8A 21 25 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=9A, VGS=0V ISD=9A, dlSD/dt=100A/µs 30 ns 15 nC 1.6 Ω ⑤ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=20V, Frequency=1.0MHz 1680 pF 260 30 12 VDD=20V, RL=30Ω, IDS=9A, VGEN= 10V, RG=6Ω Turn-off Fall Time 19 ns 34 16 ⑤ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 18 VDS=20V, VGS= 10V, IDS=9A 3 24 nC 6 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. Limited by TJmax, IAS =12A, VDD = 30V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 2 www.ruichips.com RU3520H Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU3520H Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU3520H Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU3520H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 6 www.ruichips.com RU3520H Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3520H RU3520H SOP-8 Tape&Reel 2500 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 7 www.ruichips.com RU3520H Package Information SOP-8 SYMBOL MM INCH MIN MAX MIN MAX MM SYMBOL INCH MIN MAX MIN MAX A 1.350 1.750 0.053 0.069 E 3.800 4.000 0.150 0.157 A1 0.100 0.250 0.004 0.010 E1 5.800 6.200 0.228 0.244 A2 1.350 1.550 0.053 0.061 e b 0.330 0.510 0.013 0.020 L 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 θ 0° 8° 0° 8° D 4.700 5.100 0.185 0.200 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 8 www.ruichips.com RU3520H Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. C– MAR., 2011 9 www.ruichips.com