RU1Z200Q

RU1Z200Q
N-Channel Advanced Power MOSFET
Features
Pin Description
• 150V/200A,
RDS (ON) =5.5mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
G
D
S
TO247
D
Applications
pp
• High Efficiency Synchronous Rectification in SMPS
• High Speed Power Switching
• Power Supply
G
S
N Channel MOSFET
N-Channel
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
g
150
VGSS
Gate-Source Voltage
±25
Maximum Junction Temperature
175
°C
-55 to 175
°C
TC=25°C
200
A
TC=25°C
800
A
TC=25°C
200
TC=100°C
141
TC=25°C
600
TC=100°C
300
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
ID
②
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
IDP
RJC
Thermal Resistance-Junction to Case
RJA
Thermal Resistance-Junction to Ambient
A
W
0.25
°C/W
50
°C/W
900
mJ
Drain-Source Avalanche Ratings
③
EAS
Avalanche
a a c e Energy,
e gy, S
Single
g e Pulsed
u sed
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
1
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RU1Z200Q
Electrical
El t i l Characteristics
Ch
t i ti (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU1Z200Q
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
Zero Gate Voltage Drain Current
VGS(th)
IGSS
④
RDS(ON)
150
V
VDS=150V,
150V VGS=0V
0V
1
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±25V, VDS=0V
Drain-Source On-state Resistance VGS=10V, IDS=90A
30
2.5
3.5
5.5
µA
4.5
V
±100
nA
6.5
mΩ
1.3
V
Diode Characteristics
④
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=90A, VGS=0V
ISD=90A, dlSD/dt=100A/µs
120
ns
440
nC
2
Ω
⑤
Dynamic
Characteristics
y
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=75V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
630
td(ON)
Turn-on Delay Time
35
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
1420
205
155
pF
ns
270
⑤
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=75V,IDS=90A,
VGEN=10V,RG=4.7Ω
12800
VDS=120V, VGS=10V,
IDS=90A
390
75
nC
105
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 90A
90A.
③Limited by TJmax, IAS =60A, VDD = 60V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
2
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RU1Z200Q
Ordering
O d i and
d Marking
M ki Information
I f
ti
Device
Marking
Package
RU1Z200Q
RU1Z200Q
TO247
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
Packaging Quantity Reel Size Tape width
Tube
3
30
-
-
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RU1Z200Q
Typical
Characteristics
T i l Ch
t i ti
Power Dissipation
700
Drain Current
250
600
ID - Drain Curre
ent (A)
PD - Powe
er (W)
200
500
150
400
300
Limited By Package
100
200
100
0
50
VGS=10V
0
0
25
50
75
100
125
150
175
25
50
TJ - Junction Temperature (°C)
Safe Operation Area
100
10µs
100µs
1ms
10ms
DC
10
150
175
Ids=90A
20.0
15.0
10.0
1
0.1
125
Drain Current
30.0
RDS(ON) - On - Resistan
nce (mΩ)
1000
100
25.0
RDS(ON) lim
mited
ID - Drain Current (A
A)
10000
75
TJ - Junction Temperature (°C)
TC=25°C
0.01
0.1
1
10
5.0
0.0
0
100
1
2
3
4
5
6
7
8
9
10
VGS - Gate-Source Voltage (V)
VDS - Drain-Source Voltage (V)
ZthJC - Therrmal Response (°C/W
W)
Thermal Transient Impedance
1
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
0.1
0.01
Single Pulse
0.001
RθJC=0.25°C/W
0.0001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
4
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RU1Z200Q
Typical
Characteristics
T i l Ch
t i ti
Output Characteristics
280
ID - Drain Cu
urrent (A)
RDS(ON) - On Resista
ance (mΩ)
6,8,10V
240
200
160
5V
120
80
3V
40
0
0
1
2
3
Drain-Source On Resistance
30
4
25
20
15
10
10V
5
0
5
0
25
50
VDS - Drain-Source Voltage (V)
2.0
Drain-Source On Resistance
1.5
1.0
TJ=25°C
( )
Rds(on)=5.5mΩ
-25
0
25
50
75
100
125
150
0.1
0.2
0.4
VGS - G
Gate-Source Voltage
e (V)
C - Capacitance (pF
F)
Frequency=1 0MHz
Frequency=1.0MHz
14000
12000
Ciss
6000
Coss
2000
Crss
0
1
10
100
1000
1
1.2
1.4
10
VDS 120V
VDS=120V
IDS=90A
9
8
7
6
5
4
3
2
1
0
0
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
0.8
Gate Charge
16000
4000
0.6
VSD - Source-Drain Voltage (V)
Capacitance
8000
200
TJ=25°C
1
175
20000
10000
175
TJ=175°C
TJ - Junction Temperature (°C)
18000
150
10
0.0
-50
125
Source-Drain Diode Forward
100
VGS=10V
IDS=90A
0.5
100
ID - Drain Current (A)
IS - Source Currentt (A)
No
ormalized On Resisttance
2.5
75
100
200
300
400
500
QG - Gate Charge (nC)
5
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RU1Z200Q
Avalanche
A l
h Test
T t Circuit
Ci
it and
d Waveforms
W
f
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
6
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RU1Z200Q
Package
Information
P k
I f
ti
A
TO247
1
C
h
顶杆孔深
H
2
E
1
E
1
L
2
L
L
1
A
2
b
1
b
c
b
e
D
SYMBOL
A
A1
b
b1
b2
c
c1
D
E1
E2
L
L1
L2
Φ
e
H
h
MM
MIN
4.850
2.200
1.000
2.800
1.800
0.500
1.900
15.450
40.900
24.800
20.300
7.10
0.000
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
INCH
NOM
5.000
2.400
1.200
3.000
2.000
0.600
2.000
15.600
3.500REF
3.600REF
41.100
24.950
20.450
7.20
5.450TYP
5.980REF
0.150
7
MAX
5.150
2.600
1.400
3.200
2.200
0.700
2.100
15.750
MIN
0.191
0.087
0.039
0.110
0.071
0.020
0.075
0.608
41.300
25.100
20.600
7.30
1.610
0.976
0.799
0.280
0.300
0.000
NOM
0.197
0.094
0.047
0.118
0.079
0.024
0.079
0.614
0.138REF
0.142REF
1.618
0.982
0.805
0.283
0.215TYP
0.235REF
0.006
MAX
0.203
0.102
0.055
0.126
0.087
0.028
0.083
0.620
1.626
0.988
0.811
0.287
0.012
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RU1Z200Q
Customer
Service
C t
S
i
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
@
p
Ruichips Semiconductor Co., Ltd
Rev. C– SEP., 2014
8
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