RU2H30S N-Channel Advanced Power MOSFET Features Pin Description • 200V/30A, RDS (ON) =75mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available D G S TO220 D Applications • Switching Application Systems • UPS G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 200 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C TC=25°C 30 A TC=25°C 120 A TC=25°C 30 TC=100°C 23 TC=25°C 176 TC=100°C 88 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 0.85 °C/W RθJA Thermal Resistance-Junction to Ambient 62.5 °C/W 81 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 1 www.ruichips.com RU2H30S Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU2H30S Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 200 V VDS=200V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=17A µA 30 2 4 V ±100 nA 85 mΩ 1.2 V 75 Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=30A, VGS=0V ISD=30A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=100V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time nC 1 Ω 2140 pF 308 16 VDD=100V, RL=3Ω, IDS=30A, VGEN=10V, RG=6Ω 48 ns 38 33 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 125 78 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 150 116 VDS=160V, VGS=10V, IDS=30A nC 23 52 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =18A, VDD = 60V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 2 www.ruichips.com RU2H30S Ordering and Marking Information Device Marking Package RU2H30S RU2H30S TO263 Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 Packaging Quantity Reel Size Tape width Tube 3 50 - - www.ruichips.com RU2H30S Typical Characteristics Power Dissipation 200 180 30 ID - Drain Current (A) 160 PD - Power (W) Drain Current 35 25 140 120 20 100 15 80 60 10 40 20 5 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 100 125 150 175 Drain Current Safe Operation Area 300 RDS(ON) - On - Resistance (mΩ) 1000.0 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=17A RDS(ON) limited ID - Drain Current (A) 250 100.0 10.0 200 10µs 100µs 1ms 10ms 1.0 DC TC=25°C 150 100 50 0 0.1 0.1 1 10 100 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=0.85°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 4 www.ruichips.com RU2H30S Typical Characteristics Output Characteristics 10 RDS(ON) - On Resistance (mΩ) Vgs 8,9,10V ID - Drain Current (A) Drain-Source On Resistance 150 8 120 6V 6 4 5V 2 0 0 1 2 3 4 10V 90 60 30 0 5 0 5 10 VDS - Drain-Source Voltage (V) 25 30 Source-Drain Diode Forward VGS=10V IDS=17A 2.0 IS - Source Current (A) Normalized On Resistance 20 ID - Drain Current (A) Drain-Source On Resistance 2.5 15 1.5 1.0 0.5 TJ=25°C Rds(on)=75mΩ 10.00 TJ=175°C 1.00 TJ=25°C 0.10 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz Ciss 2000 1500 1000 Coss Crss 0 1 10 1 1.2 1.4 Gate Charge 3000 500 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 2500 0.6 100 1000 10 VDS=160V IDS=30A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 50 100 150 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 5 www.ruichips.com RU2H30S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 6 www.ruichips.com RU2H30S Package Information TO263 A E L3 c1 L2 θ1 A1 H D DEP A2 L1 θ1 b C L b1 θ2 e θ θ2 SYMBOL A A1 A2 b b1 c c1 D E e H MM MIN 4.40 0.00 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.55 0.10 2.69 * * * * 8.70 10.13 2.54BSC 15.10 INCH MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 15.50 Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 MIN 0.173 0.000 0.102 0.030 0.048 0.013 0.048 0.339 0.394 NOM 0.179 0.005 0.106 MAX 0.185 0.010 0.110 0.035 0.054 0.019 0.052 0.346 0.404 0.343 0.399 0.100BSC 0.579 0.594 0.610 7 SYMBOL L L3 L1 L4 L2 θ θ1 θ2 DEP Φp1 L4 MM MIN 2.00 1.17 * NOM 2.30 1.29 * 0.25 BSC 2.50 REF 0° * 5° 7° 1° 3° 0.05 0.10 1.40 1.50 INCH MAX 2.60 1.40 1.70 MIN 0.079 0.046 * 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 NOM 0.091 0.051 * 0.01 BSC 0.098 REF * 7° 3° 0.004 0.059 MAX 0.102 0.055 0.067 8° 9° 5° 0.008 0.063 www.ruichips.com RU2H30S Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2013 8 www.ruichips.com