RU6H2L N-Channel Advanced Power MOSFET Features Pin Description • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V D • Gate charge minimized • Low Crss( Typ. 5pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) G S TO252 Applications • High efficiency switch mode power supplies • Lighting D G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 2 A TC=25°C 8 A TC=25°C 2 TC=100°C 1.2 TC=25°C 56 TC=100°C 22 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=10V) IDP ID PD Maximum Power Dissipation A W RθJC Thermal Resistance-Junction to Case 2.2 °C/W RθJA Thermal Resistance-Junction to Ambient 100 °C/W 34 mJ Drain-Source Avalanche Ratings EAS ③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 1 www.ruichips.com RU6H2L Electrical Characteristics (TC=25°C Unless Otherwise Noted) RU6H2L Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current 600 V VDS=600V, VGS=0V 1 TJ=125°C VGS(th) IGSS ④ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±30V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=1A µA 30 2 3 4000 4 V ±100 nA 5000 mΩ 1.2 V Diode Characteristics VSD ④ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=2A, VGS=0V ISD=2A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=300V, Frequency=1.0MHz Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time µC 8 Ω 280 pF 45 10 VDD=300V, RL=150Ω, IDS=2A, VGEN=10V, RG=25Ω 25 ns 20 25 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 0.77 5 Turn-off Fall Time Gate Charge Characteristics Qg ns ⑤ RG tf 190 9 VDS=480V, VGS=10V, IDS=2A nC 1.7 4.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 2 www.ruichips.com ℃ RU6H2L Ordering and Marking Information Device Marking Package RU6H2L RU6H2L TO252 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 Packaging Quantity Reel Size Tape width Tape&Reel 3 2500 13'' 16mm www.ruichips.com ℃ RU6H2L Typical Characteristics Power Dissipation Drain Current 3 50 ID - Drain Current (A) PD - Power (W) 60 40 30 20 10 2 1 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 125 150 175 RDS(ON) - On - Resistance (mΩ) 10000 10µs 100µs 1ms 10ms RDS(ON) limited ID - Drain Current (A) 1 100 Drain Current Safe Operation Area 10 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Ids=1A 8000 6000 4000 DC 0.1 2000 TC=25°C 0.01 0.1 1 0 10 100 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=2.2°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 4 www.ruichips.com ℃ RU6H2L Typical Characteristics Output Characteristics 3 RDS(ON) - On Resistance (mΩ) 8V 10V ID - Drain Current (A) Drain-Source On Resistance 10000 8000 6V 2 6000 5V 10V 4000 1 2000 3V 0 0 2 4 6 8 0 10 0 1 2 VDS - Drain-Source Voltage (V) 5 Source-Drain Diode Forward 10 VGS=10V ID=1A 2.0 IS - Source Current (A) Normalized On Resistance 4 ID - Drain Current (A) Drain-Source On Resistance 2.5 3 1.5 1.0 0.5 TJ=25°C Rds(on)=4000mΩ TJ=150°C 1 TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 400 Ciss 300 200 Coss Crss 1 10 1 1.2 1.4 Gate Charge 500 0 0.8 VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 100 0.6 100 1000 10 VDS=480V IDS=2A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) 2 4 6 8 10 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 5 www.ruichips.com ℃ RU6H2L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 6 www.ruichips.com ℃ RU6H2L Package Information TO252 E b3 L3 C D1 θ1 H D A1 E1 θ1 θ L L4 L1 θ1 e L2 b A θ2 MM SYMBOL A A1 b b3 c D D1 E E1 e H L L1 L2 L3 L4 θ θ1 θ2 MIN 2.200 0.000 0.720 5.230 0.470 6.000 6.500 4.700 9.900 1.400 0.900 0.600 0° 5° 5° Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 INCH NOM 2.290 0.785 5.345 0.525 6.100 5.30 REF 6.600 4.810 2.28 REF 10.100 1.550 2.743 REF 0.510 BSC 1.075 0.800 7° 7° 7 MAX 2.380 0.100 0.850 5.460 0.580 6.200 MIN 0.087 0.000 0.028 0.206 0.019 0.236 6.700 4.920 0.256 0.185 10.300 1.700 0.390 0.055 1.250 1.000 8° 9° 9° 0.035 0.024 0° 5° 5° NOM 0.090 0.031 0.210 0.021 0.240 0.20 REF 0.260 0.189 0.09 REF 0.398 0.061 0.108 REF 0.020 BSC 0.042 0.031 7° 7° MAX 0.094 0.004 0.033 0.215 0.023 0.244 0.264 0.194 0.406 0.067 0.049 0.039 8° 9° 9° www.ruichips.com ℃ RU6H2L Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2013 8 www.ruichips.com