MYX4DDR364M16JT 1Gb - 64M x 16 DDR3 SDRAM Advanced information. Subject to change without notice. Features • Tin-lead ball metallurgy Options • VDD = VDDQ = 1.35V (1.283-1.45V) Code • Configuration • Backward-compatible to VCC = VCCQ = 1.5V ±0.075V 64M x 16 • 1.35V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) 64M16 • Package: FBGA (Sn63 Pb37 solder) BG Footprint: 96-ball (8mm x 14mm) TW • Timing - cycle time • 8 internal banks 1.5ns @ CL = 13 (DDR3-1866) • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals -107 • Operating temperature • Programmable CAS READ latency (CL) • Programmable CAS ADDITIVE latency (AL) Industrial (-40°C ≤ TC ≤ +95°C) IT • Programmable CAS WRITE latency (CWL) Enhanced (-40°C ≤ TC ≤ +105°C) ET • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Part Marking: Label (L), Dot (D) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode • TC of -40°C to 105°C 64ms, 8192 cycle refresh at -40°C to 85°C 32ms, 8192 cycle refresh at 85°C to 105°C • Automatic self refresh (ASR) • Write leveling • Multipurpose register • Output driver calibration Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -107 1866 13-13-13 tRCD (ns) tRP (ns) CL (ns) 13.91 Micron Part. No. MT41K64M16TW-107AIT:J for the IT temp version November 16, 2015 2.12.2 February 26, 2016• •Revision Revision Micron Part No. MT41K64M16TW-107AAT:J for the ET temp version Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Form #: CSI-D-686 Document 007 MYX4DDR364M16JT • 1Gb - 64M x 16 DDR3 SDRAM Advanced information. Subject to change1Gb: without x4,notice. x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Figure 1: 96-Ball FBGA (TopFBGA View), TW(Top View) Figure 8: 96-Ball – x16 1 2 3 4 5 6 7 8 9 V DDQ DQ13 DQ15 DQ12 V SSQ V DD V SS UDQS# V DDQ DQ11 DQ9 UDQS DQ10 V DDQ V SSQ V DDQ UDM DQ8 V SSQ V DD V SS V SSQ DQ0 LDM V SSQ V DDQ V DDQ DQ2 LDQS DQ1 DQ3 V SSQ V SSQ DQ6 LDQS# V DD V SS V SSQ V REFDQ V DDQ DQ4 DQ7 DQ5 V DDQ NC V SS RAS# CK V SS NC DD CAS# CK# V CKE NC CS# WE# A10/AP ZQ NC V SS BA0 BA2 NC V REFCA V SS A12/BC# BA1 V DD A1 A4 V SS A11 A6 V DD NC A8 V SS A V SS V DDQ B DQ14 C D E F G H V SSQ J K ODT L M N Figure 13: 96-Ball FBGA – x16 (JT) P R T Notes: Figure 2: Package Dimensions 96-Ball FBGA Package - x16 (TW) V V DD A3 V SS A5 V DD A7 V SS A0 0.155 A2 A9 RESET# 1.8 CTR Nonconductive overmold NC DD 1Gb: x4, x8, x16 DDR3 SDRAM Package Dimensions 1.Ø0.45 Ball descriptions listed in Table 5 (page 23) are listed as “x4, x8” if Ball unique; otherwise, 0.47 96X A1 ID Dimensions apply x4 and x8 are the same. 9 8 7 3 2 1 to solder balls post2. A comma separates the configuration; a slash defines a selectable function. 0.42 reflow on Ø0.35 1Gb: x4, x16 DDR3 SDRAM Example D7 = NF, NF/TDQS#. NFx8, applies to the x4 configuration only. NF/TDQS# applies SMD ball pads. A Ball A1 ID Package Dimensions to the x8 configuration only—selectable between NF or TDQS# via MRS (symbols are deB fined in Table 5). C Figure 13: 96-Ball FBGA – x16 (JT) D E 0.155 F 14 ±0.1 G 18 PDF: 09005aef826aa906 1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN Micron Technology, Inc. reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved. H 12 CTR J 1.8 CTR Nonconductive overmold K L M N 96X Ø0.45 Dimensions apply to solder balls postreflow on Ø0.35 SMD ball pads. P Ball A1 ID 9 8 7 3 2 Notes: 1. All dimensions are in millimeters. 2. Solder ball material: Sn63/Pb37 3. Micron – MT41J64M16 February 2016••Revision Revision November26, 16, 2015 2.12.2 14 ±0.1 12 CTR 1 0.8 TYP Ball A1 ID R T A B 0.8 TYP C 6.4 CTR D 8 ±0.1 1.1 ±0.1 0.29 0.25 MIN E F G H J K L M Micross US (Americas) • 407.298.7100 Micross UK (EMEA & ROW) • +44 (0) 1603 788967 [email protected] www.micross.com Form #: CSI-D-686 Document 007