FTZ6.8E Diodes Zener diode FTZ6.8E !External dimensions (Units : mm) !Applications Noise suppression on single line Constant voltage control 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 !Features 1) Small surface mounting type. (SMD5) 2) Multiple diodes with common anode configuration. 3) High reliability. 0.3 +0.1 −0.05 2.8±0.2 D6F 1.6+0.2 −0.1 0.3∼0.6 0∼0.1 +0.1 0.15 −0.06 (All leads have the same dimensions.) !Construction Silicon epitaxial planar ROHM : SMD5 EIAJ : SC-74A JEDEC : − !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Power dissipation∗ Symbol Limits Unit P 200 mW Junction temperature Tj 125 ˚C Storage temperature Tstg −55∼+125 ˚C ∗ Total of 4 elements !Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Zener voltage VZ 6.47 − 7.14 V IZ=5mA Reverse current IR − − 0.5 µA VR=3.5V Operating resistance Zz − − 40 Ω IZ=5mA Rising operating resistance ZZK − − 60 Ω IZ=0.5mA Parameter Unit Conditions FTZ6.8E Diodes !Others Item Standard 1 IEC1000-4-2 Device configuration Charge/discharge capacitance : 200 pF ± 10% Discharge resistance : 400 Ω ± 10% Charge/discharge capacitance : 150 pF Discharge resistance : 330 Ω Judgment contents 5 repetitions No spark or smoke emitted No element destruction No malfunction 10 repetitions No malfunction Contact : ± 8 kV Suspended : ± 15 kV : ± 25 kV : ± 20 kV : ± 8 kV !Electrical characteristic curves (Ta=25°C) −20°C 25°C 300 70°C POWER DISSIPATION : Pd (mW) ZENER CURRENT : Iz (A) 100m 10m 1m 100µ 10µ 1µ 200 100 100n 2 3 4 5 6 7 ZENER VOLTAGE : Vz (V) Fig.1 Zener characteristics 8 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (˚C) Fig.2 Derating curve 200