US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET Schottky Barrier DIODE TUMT5 2.0 zFeatures 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. 0.2Max. 1.3 Abbreviated symbol : U38 zEquivalent circuit zApplications Switching (5) (4) ∗2 zPackaging specifications Package Type Taping Code TR Basic ordering unit (pieces) ∗1 3000 (1) (2) ∗1 ESD protection diode ∗2 Body diode US5U38 (3) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain zAbsolute maximum ratings (Ta=25°C) <MOSFET> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD ∗3 Limits −20 ±12 ±1.0 ±4.0 −0.4 −4.0 150 0.7 Unit V V A A A A °C W / ELEMENT <Di> Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation VRM VR IF IFSM Tj PD 25 20 0.7 3.0 150 0.5 V V A A °C W / ELEMENT <MOSFET AND Di> Power dissipation Range of storage temperature PD ∗3 Tstg 1.0 −55 to +150 W / TOTAL °C Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Power dissipation ∗2 ∗3 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board 1/5 US5U38 Transistor zElectrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 IDSS − Zero gate voltage drain current VGS (th) −0.7 Gate threshold voltage − ∗ Static drain-source on-state − RDS (on) resistance − ∗ 0.7 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance ∗ − td (on) Turn-on delay time ∗ − tr Rise time ∗ − td (off) Turn-off delay time ∗ − tf Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge Typ. − − − − 280 310 570 − 150 20 20 9 8 25 10 2.1 0.5 0.5 Max. ±10 − −1 −2.0 390 430 800 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−1mA ID=−1A, VGS=−4.5V ID=−1A, VGS=−4.0V ID=−0.5A, VGS=−2.5V VDS=−10V, ID=−0.5A VDS=−10V VGS=0V f=1MHz ID=−0.5A VDD −15V VGS=−4.5V RL 30Ω RG=10Ω ID=−1A, VDD −15V VGS=−4.5V RL 15Ω, RG=10Ω ∗ Pulsed <Body diode (source−drain)> Parameter Forward voltage Symbol Min. Typ. Max. Unit VSD − − −1.2 V Symbol Min. − − Typ. − − Max. 0.49 200 Unit V µA Conditions IS=−0.4A, VGS=0V <Di > Parameter Forward voltage Reverse current VF IR Conditions IF=0.7A VR=20V 2/5 US5U38 Transistor 10000 STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ] 10 1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 GATE−SOURCE VOLTAGE : -VGS[V] Ta=125°C 75°C 25°C −25°C 0.1 1 10 CAPACITANCE : C [pF] REVERSE DRAIN CURRENT : −IS[A] Ta=125°C 75°C 25°C −25°C 1 10 Fig.3 Static Drain−Source On−State Resistance vs.Drain Current ( ΙΙ ) ID=−0.5A −1A 750 Ta=25 C Pulsed 1000 500 250 0 0.1 DRAIN CURRENT : −ID[A] 10000 0 2 4 6 8 10 12 Ta=25 C f=1MHZ VGS=0V VGS=−2.5V −4.0V −4.5V 100 0.01 0.1 1 Fig.6 Static Drain−Source On−State Resistance vs.Drain Current 10000 Ta=25°C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 1000 Ciss 100 10 DRAIN CURRENT : −ID[A] Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage 1000 VGS=0V Pulsed 0.1 0.01 0.0 100 0.01 GATE−SOURCE VOLTAGE : −VGS[V] Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current ( ΙΙΙ ) 1 10 Ta=25°C Pulsed DRAIN CURRENT : −ID[A] 10 1 1000 VGS=−2.5V Pulsed 100 0.01 0.1 DRAIN CURRENT : −ID[A] STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ] 10000 100 0.01 Ta=125°C 75°C 25°C −25°C 1000 Fig.2 Static Drain−Source On−State Resistance vs.Drain Current ( Ι ) Fig.1 Typical Transfer Characteristics 1000 Ta=125°C 75°C 25°C −25°C 1000 VGS=−4V Pulsed STATIC DRAIN-SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ] 0.1 10000 VGS=−4.5V Pulsed SWITCHING TIME : t [ns] DRAIN CURRENT : −ID (A) VDS=−10V Pulsed STATIC DRAIN−SOURCE ON−STATE RESISTANCE : RDS(on)[mΩ] zElectrical characteristic curves tf 100 td(off) 10 td(on) tr Crss Coss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SOURCE−DRAIN VOLTAGE : −VSD[V] Fig.7 Reverse Drain Current vs. Source-Drain Current 1.6 10 0.01 0.1 1 10 100 DRAIN−SOURCE VOLTAGE : −VDS[V] Fig.8 Typical Capactitance vs.Drain−Source Voltage 1 0.01 0.1 1 10 DRAIN CURRENT : −ID[A] Fig.9 Switching Characteristics 3/5 US5U38 Transistor 100000 Pulsed 3 2 Ta=25 C VDD=−15V ID=−1A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 2 2.5 3 pulsed 10000 Ta = 75℃ 1000 Ta = 25℃ 100 10 Ta= - 25℃ 1 0.1 0.1 Ta = 125℃ Ta = 75℃ Ta = 25℃ 0.01 Ta= - 25℃ 0.001 0.01 0 TOTAL GATE CHARGE : Qg[nC] 1 Ta = 125℃ FORWARD CURRENT : IF(A) 4 REVERSE CURRENT : IR [uA] GATE-SOURCE VOLTAGE: -VGS [V] 5 5 10 15 20 25 0 REVERSE VOLTAGE : VR [V] 0.1 0.2 0.3 0.4 0.5 0.6 FORW ARD VOLTAGE : VF(V) Fig.10 Dynamic Input Characteristics Fig.11 Reverse Current vs. Reverse Voltage Fig.12 Forward Current vs. Forward Voltage zNotice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 4/5 US5U38 Transistor zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% ID VGS VDS D.U.T. RG 90% 90% VDS RL VDD td(on) tr tf td(off) ton toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0