20

POL Power
Table of Contents
Bootstrap, Diodes..............................................................................................................................................................3
Controllers, Current Sense Resistors............................................................................................................................. 4
High-Side Switch, Diodes................................................................................................................................................. 5
High-Side Switch, Gate Drivers........................................................................................................................................ 6
High-Side Switch, N-Channel MOSFET........................................................................................................................... 7
High-Side Switch, P-Channel MOSFET........................................................................................................................... 8
High-Side Switch, SkyFET®............................................................................................................................................. 9
Input, Capacitors............................................................................................................................................................. 10
Low-Side Switch, Diodes................................................................................................................................................ 11
Low-Side Switch, Gate Drivers.......................................................................................................................................12
Low-Side Switch, N-Channel MOSFET.......................................................................................................................... 13
Low-Side Switch, SkyFET®............................................................................................................................................ 14
Output, Capacitors.......................................................................................................................................................... 15
page 1
POL Power
Vishay components used for point-of-load solutions may include:
• Power MOSFETs
• Diodes and Rectifiers
• Controller ICs
• Capacitors
• Resistors
• Inductors
• Shunt Resistors
Application Overview
Non-isolated point-of-load converters are generally used in intermediate bus architectures to step down the bus voltage.
This multi-stage power conversion is widely implemented in telecom, computer, and consumer appliances. The POL
modules or on-board POL circuits can be placed close to the payload, thereby adding flexibility to the design.
page 2
POL Power : Bootstrap, Diodes
Schottky
Product Name
Status
Description
Features
Package
IR0530CSPTRPbF
FlipKY - Schottky Diode
0.5A, 30V, Vf=0.33V
SMD
CSP 1.2x0.9
MSS1P3L
Surface Mount Schottky Barrier Rectifier
1A, 30V, Vf=0.35V
SMD
MicroSMP
MSS1P4
Surface Mount Schottky Barrier Rectifier
1A, 40V, Vf=0.41V
SMD
MicroSMP
SL03
Small Signal Schottky Diode
1.1A, 30V, Vf=0.395V
SMD
SMF
SL04
Small Signal Schottky Diode
1.1A, 40V, Vf=0.45V
SMD
SMF
Q-Level
page 3
POL Power : Controllers, Current Sense Resistors
Current Sense Resistors
Product Name
WSL
Status
Description
Power Metal Strip, for current sensing;
low resistance values;
tight tolerances; low TCR;
Features
R0005 to R500, 1%
TCR <= ± 75ppm
P70 = 0.1W - 2W
Package
Q-Level
SMD
0603-2816
page 4
POL Power : High-Side Switch, Diodes
Schottky
Product Name
Status
Description
Features
Package
MSS2P3
Surface Mount Schottky Barrier Rectifier
2A, 30V, Vf=0,47V
SMD
MicroSMP
SS3P3
Surface Mount Schottky Barrier Rectifier
High Current Density
3A, 30V, Vf=0.43V
SMD
SMP
Q-Level
page 5
POL Power : High-Side Switch, Gate Drivers
N+P Channel MOSFETs
Product Name
Status
Description
Features
Package
Si3586DV
N- and P-Channel 20-V (D-S) MOSFET
n-ch:RDS(on)[email protected]; SMD
p-ch:RDS(on)=0.116Ω@-2.5V TSOP-6
Qg<5nC
Si5504BDC
N- and P-Channel 30-V (D-S) MOSFET
n-CH:RDS(on)[email protected];SMD
p-CH:RDS(on)=0.235Ω@-4.5V1206-8 ChipFET
Qg<2.2nC
SiA513DJ
N- and P-Channel 20-V (D-S) MOSFET
n-ch:RDS(on)[email protected]; SMD
p-ch:RDS(on)=0.185Ω@-2.5V PowerPAK
Qg<3.5nC
SC-70-6
Q-Level
page 6
POL Power : High-Side Switch, N-Channel MOSFET
MOSFETs
Product Name
Status
Description
Features
Package
Si4386DY
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=11nC
SMD
SO-8
Si4634DY
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=21.5nC
SMD
SO-8
Si4660DY
N-Channel 25-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=17nC
SMD
SO-8
Si7110DN
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=14nC
SMD
PowerPAK
1212-8
Si7114DN
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=12.5nC
SMD
PowerPAK
1212-8
Si7686DP
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=9.2nC
SMD
PowerPAK SO-8
Si7804DN
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=8.7nC
SMD
PowerPAK
1212-8
SiE822DF
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=24nC
SMD
PolarPAK
SiE844DF
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=13.1nC
SMD
PolarPAK
SiR402DP
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=14nC
SMD
PowerPAK SO-8
SiR462DP
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=8.8nC
SMD
PowerPAK SO-8
SiR892DP
N-Channel 25-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=20nC
SMD
PowerPAK SO-8
Q-Level
page 7
POL Power : High-Side Switch, P-Channel MOSFET
MOSFETs
Product Name
Status
Description
Features
Package
Si4425BDY
P-Channel 30-V (D-S) MOSFET
RDS(on)=0.012Ω@-10V;
RDS(on)=0.019Ω@-4.5V;
Qg=32nC
SMD
SO-8
Si4835DDY
P-Channel 30-V (D-S) MOSFET
RDS(on)=0.018Ω@-10V;
RDS(on)=0.030Ω@-4.5V;
Qg=22nC
SMD
SO-8
Si7421DN
P-Channel 30-V (D-S) MOSFET
RDS(on)=0.025Ω@-10V;
RDS(on)=0.043Ω@-4.5V;
Qg=13nC
SMD
PowerPAK
1212-8
Si7423DN
P-Channel 30-V (D-S) MOSFET
RDS(on)=0.018Ω@-10V;
RDS(on)=0.030Ω@-4.5V;
Qg=20nC
SMD
PowrPAK 1212-8
Si7483ADP
P-Channel 30-V (D-S) MOSFET
RDS(on)=0.0057Ω@-10V;
RDS(on)=0.0095Ω@-4.5V;
Qg=45nC
SMD
PowerPAK SO-8
Q-Level
page 8
POL Power : High-Side Switch, SkyFET®
SkyFET
Product Name
Status
Description
Features
Package
Si4642DY
N-Channel 30-V (D-S) MOSFET
with Schottky Diode
RDS(on)[email protected];
RDS(on)[email protected];
Qg=35.7nC
SMD
SO-8
SiE726DF
N-Channel 30-V (D-S) MOSFET
with Schottky Diode
RDS(on)[email protected];
RDS(on)[email protected];
Qg=50nC
SMD
PolarPAK
Q-Level
page 9
POL Power : Input, Capacitors
Tantalum Capacitors
Product Name
Status
Description
Features
Package
594D
Tantalum Chip Capacitors
4-50V, 1-1500uF
TANTAMOUNT®,
Conformal Coated, Maximum CV, Low ESR
SMD
B, C, D, R
-case
TR3
Tantalum Chip Capacitors
TANTAMOUNT®,
Low ESR, Molded Case
SMD
A, B, C, D, E, V
-case
4-50V, 0.47-680uF
Q-Level
page 10
POL Power : Low-Side Switch, Diodes
Schottky
Product Name
Status
Description
Features
Package
MSS2P3
Surface Mount Schottky Barrier Rectifier
2A, 30V, Vf=0,47V
SMD
MicroSMP
SS3P3
Surface Mount Schottky Barrier Rectifier
High Current Density
3A, 30V, Vf=0.43V
SMD
SMP
SS5P3
Surface Mount Schottky Barrier Rectifier
High Current Density
5A, 30V, Vf=0.403V
SMD
SMPC
Q-Level
page 11
POL Power : Low-Side Switch, Gate Drivers
N+P Channel MOSFETs
Product Name
Status
Description
Features
Package
Si3586DV
N- and P-Channel 20-V (D-S) MOSFET
n-ch:RDS(on)[email protected]; SMD
p-ch:RDS(on)=0.116Ω@-2.5V TSOP-6
Qg<5nC
Si5504BDC
N- and P-Channel 30-V (D-S) MOSFET
n-CH:RDS(on)[email protected];SMD
p-CH:RDS(on)=0.235Ω@-4.5V1206-8 ChipFET
Qg<2.2nC
SiA513DJ
N- and P-Channel 20-V (D-S) MOSFET
n-ch:RDS(on)[email protected]; SMD
p-ch:RDS(on)=0.185Ω@-2.5V PowerPAK
Qg<3.5nC
SC-70-6
Q-Level
page 12
POL Power : Low-Side Switch, N-Channel MOSFET
MOSFETs
Product Name
Status
Description
Features
Package
Si4378DY
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=55nC
SMD
SO-8
Si4398DY
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=34nC
SMD
SO-8
Si7108DN
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=20nC
SMD
PowerPAK
1212-8
Si7192DP
N-Channel 30-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=43.5nC
SMD
PowerPAK SO-8
Si7866ADP
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=39nC
SMD
PowerPAK SO-8
SiE808DF
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=46nC
SMD
PolarPAK
SiE810DF
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=90nC
SMD
PolarPAK
SiR890DP
N-Channel 20-V (D-S) MOSFET
RDS(on)[email protected];
RDS(on)[email protected];
Qg=20nC
SMD
PowerPAK SO-8
Q-Level
page 13
POL Power : Low-Side Switch, SkyFET®
SkyFET
Product Name
Status
Description
Features
Package
Si4642DY
N-Channel 30-V (D-S) MOSFET
with Schottky Diode
RDS(on)[email protected];
RDS(on)[email protected];
Qg=35.7nC
SMD
SO-8
SiE726DF
N-Channel 30-V (D-S) MOSFET
with Schottky Diode
RDS(on)[email protected];
RDS(on)[email protected];
Qg=50nC
SMD
PolarPAK
Q-Level
page 14
POL Power : Output, Capacitors
Tantalum Capacitors
Product Name
Status
Description
Features
Package
594D
Tantalum Chip Capacitors
4-50V, 1-1500uF
TANTAMOUNT®,
Conformal Coated, Maximum CV, Low ESR
SMD
B, C, D, R-case
TR3
Tantalum Chip Capacitors
TANTAMOUNT®,
Low ESR, Molded Case
SMD
A, B, C, D, E, V
-case
4-50V, 0.47-680uF
Q-Level
page 15
page 16