RB501V-40 Diodes Shottky barrier diode RB501V-40 zApplication Low current rectification zExternal dimensions (Unit : mm) zLead size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. UMD2 zCondtruction Silicon epitaxial planer zStructure 0.7±0.2 0.1 0.3±0.05 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) zTaping dimensions (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 8.0±0.2 2.75 1.40±0.1 4.0±0.1 2.8±0.1 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR Min. - Typ. - Max. 0.55 0.34 30 Unit V V µA Ct - 6.0 - pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz Rev.B 1/3 RB501V-40 Diodes zElectrical characteristic curves (Ta=25°C) 100 10000 Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.1 1000 0.01 Ta=75℃ 100 Ta=25℃ 10 1 Ta=-25℃ 0.1 200 300 400 500 600 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS Ta=25℃ IF=100mA n=30pcs 460 450 440 430 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 35 300 290 280 270 AVE:281.5mV 260 16 14 12 10 8 6 4 AVE:5.81pF 2 20 15 10 30 1cyc Ifsm 15 8.3ms 10 5 AVE:5.50A Ct DISPERSION MAP 20 15 10 5 AVE:6.20ns 0 trr DISPERSION MAP IFSM DISRESION MAP 15 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 0 0 AVE:2.548uA 5 IR DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) Ta=25℃ f=1MHz IR=10V n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 18 Ta=25℃ VR=10V n=10pcs 0 20 20 30 25 VF DISPERSION MAP VF DISPERSION MAP 20 30 Ta=25℃ IF=10mA n=30pcs AVE:439.5mV 420 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 310 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 470 5 REVERSE CURRENT:IR(uA) 100 10 1 0.01 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 10 100 Ta=125℃ Ta=125℃ 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 10 5 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS t 10 100 5 0 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) Ifsm 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 300us 1 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS Rev.B 2/3 RB501V-40 Diodes REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.08 D=1/2 0.06 DC Sin(θ＝180) 0.04 0.02 0.07 0.3 0.06 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.1 0.05 0.04 Sin(θ＝180) 0.03 D=1/2 DC 0.02 0.01 0 0 0 0.1 0.2 t 0.2 DC VR D=t/T VR=20V T Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Io 0A 0V 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.25 Io t 0.2 DC 0.15 T VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 0.05 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1