2SA1774EB Transistors General Purpose Transistor (−50V, −0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS zDimensions (Unit : mm) 2SA1576A 2.0 (1) 1.3 (2) 0.65 0.65 0.9 (3) 0.3 (2) 0.95 0.95 1.9 2.9 (3) 0.7 (1) 2SA1037AK 0.4 zFeatures 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 0 to 0.1 0.1 to 0.4 Each lead has same dimensions Each lead has same dimensions (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 Abbreviated symbol : F ∗ Abbreviated symbol : F ∗ 2SA2029 ROHM : EMT3 EIAJ : SC-75A 0.8 (3) 0.5 0.13 0 to 0.1 0.7 0.55 0 to 0.1 (1) Emitter (2) Base (3) Collecto ROHM : VMT3 EIAJ : Abbreviated symbol : F ∗ 0.22 (1) 1.6 0.1Min. 0.2 (2) 0.4 0.4 1.2 0.32 0.2 0.8 1.2 0.8 0.2 1.6 (2) (3) 1.0 0.5 0.5 (1) 0.2 2SA1774 0.3 0 to 0.1 0.15 1.1 0.8 0.15 0.3 to 0.6 0.15 0.15Max. (1) Base (2) Emitter (3) Collector Abbreviated symbol : F ∗ 2SA933AS 2 3Min. 3 4 (15Min.) zStructure Epitaxial planar type. PNP silicon transistor 0.2 2.8 0.45 2.5 0.5 0.45 5 (1) (2) (3) Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes hFE Rev.A 1/3 2SA1774EB Transistors zAbsolute maximum ratings (Ta=25°C) Symbol Parameter Limits Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −6 V IC −0.15 A (DC) PC 0.15 Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C Collector current 2SA1037AK, 2SA1576A Collector power dissipation 0.2 2SA2029, 2SA1774 2SA933AS W 0.3 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −60 − − V IC= −50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −50µA Collector cutoff current ICBO − − −0.1 µA VCB= −60V Emitter cutoff current IEBO − − −0.1 µA VEB= −6V VCE(sat) − − −0.5 V IC/IB= −50mA/−5mA hFE 120 − 560 − VCE= −6V, IC= −1mA Transition frequency fT − 140 − MHz Output capacitance Cob − 4.0 5.0 pF Collector-emitter saturation voltage DC current transfer ratio Conditions VCE= −12V, IE=2mA, f=100MHz VCB= −12V, IE=0A, f=1MHz zPackaging specifications and hFE Package Type hFE 2SA2029 QRS Taping Code T146 T106 TL T2L TP Basic ordering unit (pieces) 3000 3000 3000 8000 5000 − − − − − − − − − − − − 2SA1037AK QRS 2SA1576A QRS − 2SA1774 QRS − − 2SA933AS QRS − − − − − hFE values are classified as follows: Item Q R S hFE 120 to 270 180 to 390 270 to 560 Rev.A 2/3 2SA1774EB Transistors zElectrical characteristic curves −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 Fig.1 Grounded emitter propagation characteristics −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA −0.4 −0.8 −1.2 DC CURRENT GAIN : hFE −200 −150 −40 −100 −20 −50µA IB=0 0 −1 −2 −3 −4 −5 Fig.3 Grounded emitter output characteristics (II) −40˚C 200 100 50 50 −1 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −2 −5 −10 −20 −0.2 −0.5 −1 −50 −100 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 500 200 100 50 0.5 1 2 5 10 20 −5 −10 −20 −50 −100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) Ta=25˚C VCE= −12V lC/lB=10 −2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) −0.5 −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −1 VCE= −6V −5 −10 −20 −50 −100 −2 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −0.2 −0.5 −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −250 Fig.2 Grounded emitter output characteristics (I) 25˚C 100 −500 −450 −400 −350 −300 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=100˚C 200 −60 Ta=25˚C COLLECTOR TO EMITTER VOLTAGE : VCE (V) VCE= −5V −3V −1V Ta=25˚C −80 IB=0 −1.6 −2.0 500 500 DC CURRENT GAIN : hFE −28.0 −8 0 BASE TO EMITTER VOLTAGE : VBE (V) −100 −31.5 COLLECTOR CURRENT : IC (mA) −10 −35.0 Ta=25˚C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −20 −10 VCE= −6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0