ROHM 2SA1037AK_1

2SA1774EB
Transistors
General Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
zDimensions (Unit : mm)
2SA1576A
2.0
(1)
1.3
(2)
0.65 0.65
0.9
(3)
0.3
(2)
0.95 0.95
1.9
2.9
(3)
0.7
(1)
2SA1037AK
0.4
zFeatures
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
1.25
1.6
2.1
0 to 0.1
0.1 to 0.4
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
2SA2029
ROHM : EMT3
EIAJ : SC-75A
0.8
(3)
0.5
0.13
0 to 0.1
0.7
0.55
0 to 0.1
(1) Emitter
(2) Base
(3) Collecto
ROHM : VMT3
EIAJ :
Abbreviated symbol : F ∗
0.22
(1)
1.6
0.1Min.
0.2
(2)
0.4 0.4
1.2
0.32
0.2
0.8
1.2
0.8
0.2
1.6
(2)
(3)
1.0
0.5 0.5
(1)
0.2
2SA1774
0.3
0 to 0.1
0.15
1.1
0.8
0.15
0.3 to 0.6
0.15
0.15Max.
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F ∗
2SA933AS
2
3Min.
3
4
(15Min.)
zStructure
Epitaxial planar type.
PNP silicon transistor
0.2
2.8
0.45
2.5
0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Rev.A
1/3
2SA1774EB
Transistors
zAbsolute maximum ratings (Ta=25°C)
Symbol
Parameter
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
IC
−0.15
A (DC)
PC
0.15
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
Collector current
2SA1037AK, 2SA1576A
Collector power
dissipation
0.2
2SA2029, 2SA1774
2SA933AS
W
0.3
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC= −50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE= −50µA
Collector cutoff current
ICBO
−
−
−0.1
µA
VCB= −60V
Emitter cutoff current
IEBO
−
−
−0.1
µA
VEB= −6V
VCE(sat)
−
−
−0.5
V
IC/IB= −50mA/−5mA
hFE
120
−
560
−
VCE= −6V, IC= −1mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
4.0
5.0
pF
Collector-emitter saturation voltage
DC current transfer ratio
Conditions
VCE= −12V, IE=2mA, f=100MHz
VCB= −12V, IE=0A, f=1MHz
zPackaging specifications and hFE
Package
Type
hFE
2SA2029
QRS
Taping
Code
T146
T106
TL
T2L
TP
Basic ordering
unit (pieces)
3000
3000
3000
8000
5000
−
−
−
−
−
−
−
−
−
−
−
−
2SA1037AK QRS
2SA1576A
QRS
−
2SA1774
QRS
−
−
2SA933AS
QRS
−
−
−
−
−
hFE values are classified as follows:
Item
Q
R
S
hFE
120 to 270
180 to 390
270 to 560
Rev.A
2/3
2SA1774EB
Transistors
zElectrical characteristic curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Fig.1 Grounded emitter propagation
characteristics
−24.5
−21.0
−6
−17.5
−14.0
−4
−10.5
−7.0
−2
−3.5µA
−0.4
−0.8
−1.2
DC CURRENT GAIN : hFE
−200
−150
−40
−100
−20
−50µA
IB=0
0
−1
−2
−3
−4
−5
Fig.3 Grounded emitter output
characteristics (II)
−40˚C
200
100
50
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−2
−5 −10 −20
−0.2 −0.5 −1
−50 −100
1000
TRANSITION FREQUENCY : fT (MHz)
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
500
200
100
50
0.5
1
2
5
10
20
−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Ta=25˚C
VCE= −12V
lC/lB=10
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
−0.5
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−1
VCE= −6V
−5 −10 −20 −50 −100
−2
50
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
−0.2 −0.5 −1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−250
Fig.2 Grounded emitter output
characteristics (I)
25˚C
100
−500
−450
−400
−350
−300
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=100˚C
200
−60
Ta=25˚C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
VCE= −5V
−3V
−1V
Ta=25˚C
−80
IB=0
−1.6
−2.0
500
500
DC CURRENT GAIN : hFE
−28.0
−8
0
BASE TO EMITTER VOLTAGE : VBE (V)
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE= −6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0