SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 Product Overview Features y r a in Benefits • High voltage 600V • Low on resistance RDS(On) • High current 15A • Voltage controlled • High temperature 210°C • Low gate charge • BeO free and RoHS compliant m i l e r P • HMP solder tinned leads available • Silicon Carbide (SiC) exhibits low on resistance RDS(On) and superior high temperature performance • Extremely fast switching • Screening options available • Low intrinsic capacitance Applications ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Surface mount • Harsh environment motor drive Figure 1: SMD 0.5 • Harsh environment inverter • Switch power supplies Pad 1 Pad 3 • Power factor correction modules • Induction heating • Other packaging options available Pad 2 ( Large Pad) Figure 2: Circuit Diagram Absolute Maximum Ratings* Symbols Values Units Drain Source Voltage (VGS = 0V) 600 Volts ID Continuous Drain Current 15 Amps IGM Gate Peak Current 10 Amps VGS Reverse Gate - Source Voltage 30 Volts VDS Reverse Drain - Source Voltage 25 Volts PD Total Power Dissipation 54 Watts VDS TJ & Tstg Parameters Junction Temperature Range & Storage Temperature Range -55 to +210 o Values Units C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 3.4 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 y r a in Electrical Characteristics Symbols VDS RDS(On) VGS(FWD) β Parameters Drain Source On Voltage Test Conditions Min ID = 15 A, IG = 400mA, TJ=25oC 1.3 ID = 15 A, IG = 1000mA, TJ=175oC 2.2 ID = 15 A, IG = 1000mA, TJ=210oC 3.0 ID = 15 A, IG = 400mA, TJ=25oC 65 ID = 15 A, IG = 1000mA, TJ=175oC 110 ID = 15 A, IG = 1000mA, TJ=210oC 165 m i l e r P Drain Source On State Resistance Gate Forward Voltage DC Current Gain Typ IG=1000mA, TJ=25oC 3 IG=1000mA, TJ=210oC 2.6 VDS=5V, ID=10A, TJ =25oC 110 VDS=5V, ID=10A, TJ =210oC 65 Max Units V mΩ V Off Characteristics Symbols IDSS March 2014 Rev 1.0 Parameters Drain Leakage Current Test Conditions Min Typ VR = 600 V, VGS = 0 V, TJ=25oC 10 VR = 600 V, VGS = 0 V, TJ=175oC 70 VR = 600 V, VGS = 0 V, TJ=210oC 95 Max Units μA 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 y r a in m i l e r P M X S0 Y 0600- 15DAO yywwa yywwa = Date code and batch yy = year ww = week a = batch (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 * Absolute Maximum Ratings Disclaimer y r a in Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Disclaimer MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COMPONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF MICROSS COMPONENTS. As used herein: m i l e r P 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Document Title Silicon Carbide Super Junction Transistor Normally Off 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 Revision History Revision # History Release Date 1.0 Initial release March 2014 March 2014 Rev 1.0 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com