SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 Product Overview Features y r a in Benefits • High voltage 650V • Low on resistance RDS(On) • High current 7A • Voltage controlled • High temperature 210°C • Low gate charge • BeO free and RoHS compliant m i l e r P • HMP solder tinned leads available • Silicon Carbide (SiC) exhibits low on resistance RDS(On) and superior high temperature performance • Extremely fast switching • Screening options available • Low intrinsic capacitance Applications ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Surface mount • Harsh environment motor drive Figure 1: SMD 0.5 • Harsh environment inverter • Switch power supplies • Power factor correction modules Pad 1 Pad 3 • Induction heating • Other packaging options available Pad 2 ( Large Pad) Figure 2: Circuit Diagram Absolute Maximum Ratings* Symbols VDS Parameters Drain Source Voltage (VGS = 0V) Values Units 650 Volts ID Continuous Drain Current 7 Amps IGM Gate Peak Current 5 Amps VGS Reverse Gate - Source Voltage 200 Volts VDS Reverse Drain - Source Voltage 40 Volts PD Total Power Dissipation 54 Watts TJ & Tstg Junction Temperature Range & Storage Temperature Range -55 to +210 o Values Units C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 3.4 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 y r a in Electrical Characteristics Symbols VDS RDS(On) VGS(FWD) β Parameters Drain Source On Voltage Test Conditions Min ID = 7 A, IG = 250mA, TJ=25oC 1.2 ID = 7 A, IG = 500mA, TJ=175oC 2.2 ID = 7 A, IG = 500mA, TJ=210oC 3.1 ID = 7 A, IG = 250mA, TJ=25oC 170 ID = 7 A, IG = 500mA, TJ=175oC 330 ID = 7 A, IG = 500mA, TJ=210oC 550 m i l e r P Drain Source On State Resistance Gate Forward Voltage DC Current Gain Typ IG=500mA, TJ=25oC 3 IG=500mA, TJ=210oC 2.7 VDS=5V, ID=7A, TJ =25oC 120 VDS=5V, ID=7A, TJ =210oC 80 Max Units V mΩ V Off Characteristics Symbols IDSS Parameters Drain Leakage Current Test Conditions Min Typ VR = 650 V, VGS = 0 V, TJ=25oC 2.5 VR = 650 V, VGS = 0 V, TJ=175oC 4 VR = 650 V, VGS = 0 V, TJ=210oC 10 Max Units μA Charge Characteristics Symbols Parameters CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance March 2014 Rev 1.0 Test Conditions Min Typ Max Units 720 VDS= 35V, VGS=0V, f=1MHz 88 pF 88 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 y r a in m i l e r P yywwa = Date code and batch yy = year ww = week a = batch (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 * Absolute Maximum Ratings Disclaimer y r a in Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Disclaimer MICROSS COMPONENTS DO NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DO WE CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY MICROSS COMPONENTS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF MICROSS COMPONENTS. As used herein: m i l e r P 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Document Title Silicon Carbide Super Junction Transistor Normally Off 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 Revision History Revision # History Release Date 1.0 Initial release March 2014 March 2014 Rev 1.0 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com