Die Datasheet GB10SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE (version 4) software for simulation of the GB10SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GB10SLT12-CAL SPICE Model * .SUBCKT GB10SLT12 ANODE KATHODE D1 ANODE KATHODE GB10SLT12_SCHOTTKY D2 ANODE KATHODE GB10SLT12_PIN .MODEL GB10SLT12_SCHOTTKY D + IS 4.55E-15 RS 0.0736 + N 1 IKF 1000 + EG 1.2 XTI -2 + TRS1 0.0054347826 TRS2 2.71739E-05 + CJO 6.40E-10 VJ 0.469 + M 1.508 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 10 TYPE SiC_Schottky + MFG GeneSiC_Semi .MODEL GB10SLT12_PIN D + IS 1.54E-22 RS 0.19 + TRS1 -0.004 N 3.941 + EG 3.23 IKF 19 + XTI 0 FC 0.5 + TT 0 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 10 TYPE SiC_PiN .ENDS * * End of GB10SLT12-CAL SPICE Model Sep 2013 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Pg1 of 1