GA50JT06 CAL

Die Datasheet
Normally – OFF Silicon Carbide
Junction Transistor
GA50JT06-CAL
VDS
RDS(ON)
o
=
600 V
=
25 mΩ
ID @ 25 C
=
100 A
hFE
=
105
Features
•
•
•
•
•
•
•
•
210°C maximum operating temperature
Gate Oxide Free SiC switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Co-efficient of RDS,ON
Suitable for connecting an anti-parallel diode
Die Size = 4.35 mm x 4.35 mm
Advantages
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Compatible with Si MOSFET/IGBT gate-drivers
> 20 µs Short-Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
o
Absolute Maximum Ratings (TC = 25 C unless otherwise specified)
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Drain Current
Gate Peak Current
Symbol
VDS
ID
ID
IGM
Turn-Off Safe Operating Area
RBSOA
Short Circuit Safe Operating Area
SCSOA
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Operating Junction and Storage Temperature
Maximum Processing Temperature
VGS
VDS
Tj, Tstg
TProc
Conditions
VGS = 0 V
TC = 25°C
TC > 125°C, assumes RthJC < 0.26 oC/W
TVJ = 210 oC,
Clamped Inductive Load
TVJ = 210 oC, IG = 1 A, VDS = 400 V,
Non Repetitive
10 min. maximum
Values
600
100
50
3.5
ID,max = 50
@ VDS ≤ VDSmax
Unit
V
A
A
A
20
µs
30
25
-55 to 210
325
V
V
°C
°C
A
Electrical Characteristics
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
On Characteristics
Drain – Source On Resistance
RDS(ON)
ID = 50 A, IG = 1000 mA, Tj = 25 °C
ID = 50 A, IG = 1000 mA, Tj = 125 °C
ID = 50 A, IG = 2000 mA, Tj = 175 °C
ID = 50 A, IG = 2000 mA, Tj = 210 °C
Gate – Source Saturation Voltage
VGS,SAT
ID = 50 A, ID/IG = 40, Tj = 25 °C
ID = 50 A, ID/IG = 30, Tj = 175 °C
β
VDS = 5 V, ID = 50 A, Tj = 25 °C
VDS = 5 V, ID = 50 A, Tj = 125 °C
VDS = 5 V, ID = 50 A, Tj = 175 °C
VDS = 5 V, ID = 50 A, Tj = 210 °C
25
39
43
62
3.42
3.23
105
77
71
69
VR = 600 V, VGS = 0 V, Tj = 25 °C
VR = 600 V, VGS = 0 V, Tj = 210 °C
VGS = -20 V, Tj = 25 °C
10
100
20
DC Current Gain
mΩ
V
Off Characteristics
Drain Leakage Current
IDSS
Gate – Source Leakage Current
IGSS
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µA
nA
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Die Datasheet
GA50JT06-CAL
Electrical Characteristics
Parameter
Symbol
Conditions
Ciss
Crss/Coss
VGS = 0 V, VD = 100 V, f = 1 MHz
VD = 100 V, f = 1 MHz
min.
Values
typ.
max.
Unit
Capacitance Characteristics
Input Capacitance
Reverse Transfer/Output Capacitance
6440
420
pF
pF
Figures
Figure 1: Typical Output Characteristics at 25 °C
Figure 2: Typical Output Characteristics at 125 °C
Figure 3: Typical Output Characteristics at 175 °C
Figure 4: Typical Output Characteristics at 210 °C
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Die Datasheet
GA50JT06-CAL
Figure 5: Typical Gate – Source Saturation Voltage
Figure 6: Normalized On-Resistance and Current Gain vs.
Temperature
Figure 7: Typical Blocking Characteristics
Figure 8: Capacitance Characteristics
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Die Datasheet
GA50JT06-CAL
Driving the GA50JT06-CAL
Drive Topology
TTL Logic
Constant Current
High Speed – Boost Capacitor
High Speed – Boost Inductor
Proportional
Pulsed Power
Gate Drive Power
Consumption
High
Medium
Medium
Low
Lowest
Medium
Switching
Frequency
Low
Medium
High
High
High
N/A
Application Emphasis
Availability
Wide Temperature Range
Wide Temperature Range
Fast Switching
Ultra Fast Switching
Wide Drain Current Range
Pulse Power
Coming Soon
Coming Soon
Production
Coming Soon
Coming Soon
Coming Soon
A: Static TTL Logic Driving
The GA50JT06-CAL may be driven using direct (5 V) TTL logic after current amplification. The (amplified) current level of the supply must
meet or exceed the steady state gate current (IG,steady) required to operate the GA50JT06-CAL. The power level of the supply can be estimated
from the target duty cycle of the particular application. IG,steady is dependent on the anticipated drain current ID through the SJT and the DC
current gain hFE, it may be calculated from the following equation. An accurate value of the hFE may be read from Figure 6.
, ≈

∗ 1.5
ℎ (,  )
5V
SiC SJT
TTL
Gate Signal
D
G
5/0V
TTL i/p
IG,steady
S
Figure 9: TTL Gate Drive Schematic
B: High Speed Driving
The SJT is a current controlled transistor which requires a positive gate current for turn-on as well as to remain in on-state. An ideal gate
current waveform for ultra-fast switching of the SJT, while maintaining low gate drive losses, is shown in Figure 10 which features a positive
current peak during turn-on, a negative current peak during turn-off, and continuous gate current to remain on.
Figure 10: An idealized gate current waveform for fast switching of an SJT.
An SJT is rapidly switched from its blocking state to on-state, when the necessary gate charge, QG, for turn-on is supplied by a burst of high
gate current, IG,on, until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged.
 = , ∗ 1
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 ≥  + 
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Die Datasheet
GA50JT06-CAL
Ideally, IG,on should terminate when the drain voltage falls to its on-state value in order to avoid unnecessary drive losses during the steady onstate. In practice, the rise time of the IG,on pulse is affected by the parasitic inductances, Lpar in the device package and drive circuit. A voltage
developed across the parasitic inductance in the source path, Ls, can de-bias the gate-source junction, when high drain currents begin to flow
through the device. The voltage applied to the gate pin should be maintained high enough, above the VGS,sat (see Figure 5) level to counter
these effects.
A high negative peak current, -IG,off is recommended at the start of the turn-off transition, in order to rapidly sweep out the injected carriers from
the gate, and achieve rapid turn-off. While satisfactory turn off can be achieved with VGS = 0 V, a negative gate voltage VGS may be used in
order to speed up the turn-off transition.
Two high-speed drive topologies for the SiC SJTs are presented below.
B:1: High Speed, Low Loss Drive with Boost Capacitor, GA15IDDJT22-FR4
The GA50JT17-CAL may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate
resistor, and a gate capacitor are used to provide fast switching current peaks at turn-on and turn-off and a continuous gate current while in
on-state. An evaluation gate drive board (GA15IDDJT22-FR4) utilizing this topology is commercially available for low-side driving, its
datasheet provides additional details.
Gate Driver Board
CG1
VGL
VGL
Signal
R2
R1 U4
D
VGH
U1
CG2
C6
VEE
VCC High
+12 V
C2
X2
R6
C5
VCC Low RTN
SJT
S
RG1
U3
R4
D1
RG2
VGH
VCC Low
C1
R5
VEE C8
VCC High RTN
+12 V
G
C7
VGL
R3
VGL
IG
U2
Signal RTN
VEE C9 VEE C10
Gate
X1
C21
Source
C4
VEE
Figure 1: Topology of the GA15IDDJT22-FR4 Two Voltage Source gate driver.
The GA15IDDJT22-FR4 evaluation board comes equipped with two on board gate drive resistors (RG1, RG2) pre-installed for an effective
gate resistance3 of RG = 0.7 Ω. It may be necessary for the user to reduce RG1 and RG2 under high drain current conditions for safe operation
of the GA50JT17-CAL. The steady state current supplied to the gate pin of the GA50JT17-CAL with on-board RG = 0.7 Ω, is shown in
Figure 25. The maximum allowable safe value of RG for the user’s required drain current can be read from Figure 26.
For the GA50JT17-CAL, RG must be reduced for ID ≥ ~60 A for safe operation with the GA15IDDJT22-FR4.
For operation at ID ≥ ~60 A, RG may be calculated from the following equation, which contains the DC current gain hFE (Figure 4) and the gatesource saturation voltage VGS,sat (Figure 7).
, =
Feb 2015
�4.7 − , � ∗ ℎ (,  )
− 0.1Ω
 ∗ 1.5
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Die Datasheet
Figure 2: Typical steady state gate current supplied by the
GA15IDDJT22-FR4 board for the GA50JT17-CAL with the on
board resistance of 0.7 Ω
GA50JT06-CAL
Figure 3: Maximum gate resistance for safe operation of
the GA50JT17-CAL at different drain currents using the
GA15IDDJT22-FR4 board.
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA50JT06-CAL at high-speed. It utilizes a gate drive
inductor instead of a capacitor to provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a
specified IG,on current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 14.
After turn on, while the device remains on the necessary steady state gate current IG,steady is supplied from source VCC through RG. Please refer
to the article “A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional
information on this driving topology.4
VCC
S1
VCC
S2
L
VEE
S3
SiC SJT
D
G
RG
S4
S
VEE
Figure 14: Simplified Inductive Pulsed Drive Topology
3
– RG = (1/RG1 +1/RG2)-1. Driver is pre-installed with RG1 = RG2 = 7.5 Ω
4
– Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013
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Die Datasheet
GA50JT06-CAL
C: Proportional Gate Current Driving
For applications in which the GA50JT06-CAL will operate over a wide range of drain current conditions, it may be beneficial to drive the device
using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous drain
current ID feedback to vary the steady state gate current IG,steady supplied to the GA50JT06-CAL
C:1: Voltage Controlled Proportional Driver
The voltage controlled proportional driver relies on a gate drive IC to detect the GA50JT06-CAL drain-source voltage VDS during on-state to
sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power
consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the
drain and sense protects the IC from high-voltage when the driver and GA50JT06-CAL are in off-state. A simplified version of this topology is
shown in Figure 15, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
HV Diode
Sense
Gate Signal
Proportional
Gate Current
Driver
Signal
D
G
Output
IG,steady
SiC SJT
S
Figure 15: Simplified Voltage Controlled Proportional Driver
C:2: Current Controlled Proportional Driver
The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the GA50JT06CAL during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID at a fixed forced current gain
which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA50JT06-CAL is initially tuned-on using a gate current pulse supplied
into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power consumption, to be
reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in Figure 16,
additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.
N2
SiC SJT
Gate Signal
D
G
S
N3
N1
N2
Figure 16: Simplified Current Controlled Proportional Driver
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Die Datasheet
GA50JT06-CAL
Mechanical Parameters
Die Dimensions
4.35 x 4.35
mm2
171 x 171
mil2
Die Area total / active
18.92/16.56
mm2
29330/25677
mil2
Die Thickness
360
µm
14
mil
Wafer Size
100
mm
3937
mil
0
deg
0
deg
Flat Position
Die Frontside Passivation
Polyimide
Gate/Source Pad Metallization
4000 nm Al
Bottom Drain Pad Metallization
400 nm Ni + 200 nm Au
Die Attach
Electrically conductive glue or solder
Wire Bond
Al ≤ 12 mil (Source)
Al ≤ 5 mil (Gate)
Φ ≥ 0.3 mm
Reject ink dot size
Store in original container, in dry nitrogen,
Recommended storage environment
< 6 months at an ambient temperature of 23 °C
Chip Dimensions:
A
C
D
DIE
F
B
E
SOURCE
WIREBONDABLE
G
D
Feb 2015
GATE
WIREBONDABLE
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mm
mil
A
4.35
171
B
4.35
171
C
3.30
130
D
1.75
69
E
0.24
9
F
0.46
18
G
0.57
22
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Die Datasheet
GA50JT06-CAL
Revision History
Date
2015/02/09
2014/08/26
Revision
3
2
Comments
Updated Electrical Characteristics
Updated Electrical Characteristics
2014/03/03
2013/12/04
1
0
Updated Electrical Characteristics
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Feb 2015
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Die Datasheet
GA50JT06-CAL
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
http://www.genesicsemi.com/images/hit_sic/baredie/sjt/GA50JT06-CAL_SPICE.pdf) into LTSPICE
(version 4) software for simulation of the GA50JT06-CAL.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.1
$
*
$Date:
03-Mar-2014
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA50JT06 NPN
+ IS
5.00E-47
+ ISE
1.26E-28
+ EG
3.23
+ BF
106
+ BR
0.55
+ IKF
9000
+ NF
1
+ NE
2
+ RB
0.26
+ RE
0.01
+ RC
0.013
+ CJC
2.3989E-9
+ VJC
2.8346223
+ MJC
0.4846
+ CJE
6.026E-09
+ VJE
3.17915435
+ MJE
0.52951635
+ XTI
3
+ XTB
-1.2
+ TRC1
7.00E-3
+ VCEO
600
+ ICRATING 50
+ MFG
GeneSiC_Semiconductor
* End of GA50JT06-CAL SPICE Model
Mar 2014
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