MIMMG100W120X6TN

MIMMG100W120X6TN
1200V 100A Six-Pack Module
RoHS Compliant
FEATURES
□ High level of integration
3
□ IGBT CHIP(Trench+Field Stop technology)
□ Low saturation voltage and positive temperature coefficient
□ Fast switching and short tail current
□ Free wheeling diodes with fast and soft reverse recovery
□ Solderable pins for PCB mounting
□ Temperature sense included
APPLICATIONS
□ AC motor control
□ Motion/servo control
□ Inverter and power supplies
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
V
±20
V
TC=25°C
140
A
TC=80°C
100
A
tp=1ms
200
A
450
W
TVj=25°C
1200
V
TC=25°C
140
A
TC=80°C
100
A
tp=1ms
200
A
TVj =125°C, t=10ms, VR=0V
1850
A2 s
IGBT
VCES
Collector - Emitter Voltage
VGES
Gate - Emitter Voltage
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
Ptot
Power Dissipation Per IGBT
TVj=25°C
Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2 t
MIMMG100W120X6TN
INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.0
5.8
6.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=4.0mA
Collector - Emitter
IC=100A, VGE=15V, TVj=25°C
1.7
V
Saturation Voltage
IC=100A, VGE=15V, TVj=125°C
1.9
V
VCE=1200V, VGE=0V, TVj=25°C
1
mA
VCE=1200V, VGE=0V, TVj=125°C
10
mA
400
nA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
RGint
Integrated Gate Resistor
Qge
Gate Charge
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
td(off)
Turn - off Delay Time
tf
Fall Time
Eon
Turn - on Energy
Eoff
Turn - off Energy
ISC
Short Circuit Current
RthJC
Junction-to-Case Thermal Resistance
VCE=0V,VGE±15V, TVj=125°C
VCE=600V, IC=100A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
-400
7.5
Ω
0.9
µC
7.1
nF
0.3
nF
VCC=600V,IC=100A,
TVj =25°C
260
ns
RG =3.9Ω,
TVj =125°C
290
ns
VGE=±15V,
TVj =25°C
30
ns
Inductive Load
TVj =125°C
50
ns
VCC=600V,IC=100A,
TVj =25°C
420
ns
RG =3.9Ω,
TVj =125°C
520
ns
VGE=±15V,
TVj =25°C
70
ns
Inductive Load
TVj =125°C
90
ns
VCC=600V,IC=100A,
TVj =25°C
7.8
mJ
RG =3.9Ω,
TVj =125°C
10
mJ
VGE=±15V,
TVj =25°C
8
mJ
Inductive Load
TVj =125°C
10
mJ
400
A
tpsc≤10µS , VGE=15V
TVj=125°C,VCC=900V
（ Per IGBT）
0.28
K /W
Diode
IF=100A , VGE=0V, TVj =25°C
1.65
V
IF=100A , VGE=0V, TVj =125°C
1.65
V
Reverse Recovery Time
IF=100A , VR=600V
320
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-2400A/μs
105
A
Erec
Reverse Recovery Energy
TVj =125°C
9.5
mJ
RthJCD
Junction-to-Case Thermal Resistance （ Per Diode）
VF
Forward Voltage
trr
0.5
K /W
MIMMG100W120X6TN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
R25
TC=25°C unless otherwise specified
Parameter
Resistance
Test Conditions
Min.
TC =25°C
B25/50
MODULE CHARACTERISTICS
Symbol
Typ.
Max.
Unit
5
KΩ
3375
K
TC=25°C unless otherwise specified
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
°C
TVj max
Max. Junction Temperature
TVj op
Operating Temperature
-40
125
°C
Tstg
Storage Temperature
-40
125
°C
Visol
Insulation Test Voltage
CTI
Comparative Tracking Index
Md
Mounting Torque
AC, t=1min
3000
V
250
Recommended（M5）
Weight
2.5
5
300
200
N· m
g
200
VGE =15V
160
TVj =25°C
120
IC (A)
IC (A)
160
80
TVj =125°C
40
0
0
120
TVj =125°C
80
40
1.5 2.0 2.5 3.0 3.5
VCE（V）
Figure1. Typical Output Characteristics
IGBT-inverter
0.5
1.0
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE（V）
Figure2. Typical Output Characteristics
IGBT-inverter
MIMMG100W120X6TN
30
200
VCE =20V
25
TVj =25°C
80
TVj =125°C
Eon Eoff (mJ)
IC (A)
160
120
40
5
6
10
Eoff
20
0
4
16 20 24 28 32 36
RG（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
7
VCE=600V
RG=3.9Ω
VGE=±15V
TVj =125°C
25
8
12
250
200
Eon
150
15
Eoff
IC (A)
Eon Eoff (mJ)
15
0
9
10
8
11 12
VGE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
30
100
RG=3.9Ω
VGE=±15V
TVj =125°C
10
50
5
0
0
0
600 800 1000 1200 1400
VCE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
100
150
200
IC（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
50
0
12.0
200
Erec (mJ)
120
80
40
TVj =25°C
1.2
1.8
2.4
VF（V）
Figure7. Diode Forward Characteristics
Diode -inverter
0.6
8.0
6.0
4.0
TVj =125°C
0
200 400
IF=100A
VCE=600V
TVj =125°C
10.0
160
0
Eon
20
5
0
IF (A)
VCE=600V
IC=100A
VGE=±15V
TVj =125°C
2.0
0
0
4
8
12 16 20
24 28 32 36
RG（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
MIMMG100W120X6TN
14.0
1
RG=3.9Ω
VCE=600V
TVj =125°C
12.0
Diode
ZthJC (K/W)
8.0
6.0
IGBT
0.1
4.0
2.0
0
0
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of
Diode and IGBT-inverter
100
200
150
IF (A)
Figure9. Switching Energy vs. Forward Current
Diode-inverter
50
100000
IFGE
=25=15V
A
V
VCE=600V
TVj =125°C
10000
R (Ω)
Erec (mJ)
10.0
R
1000
100
0
20
60 80 100 120 140 160
TC（°C）
Figure11. NTC Characteristics
40
MIMMG100W120X6TN
Figure12. Circuit Diagram
Dimensions (mm)
Figure13. Package Outline