MIMMG600KR120U

MIMMG600KR120U
1200V 600A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· With Fast Free-Wheeling Diodes
· 10K Ω Gate Protected Resistance Inside
APPLICATIONS
· Inverter
· Convertor
· Welder
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditi ons
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
1200
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
900
A
TC=80°C
600
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
1800
A
TC=80°C, tp=1ms
1200
A
Ptot
Power Dissipation Per IGBT
3125
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
1200
V
TC=25°C
600
A
TC=80°C
400
A
600
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
4000
A
Forward Current
TJ=45°C, t=8.3ms, Sine
4400
A
MIMMG600K120U
ELECTRICAL CHARACTERISTICS
Symbol
TC=25°C unless otherwise specified
Parameter
Test Condit ions
Min.
Typ.
Max.
Unit
5
6.2
7
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=24mA
Collector - Emitter
IC=600A, VGE=15V, TJ=25°C
1.9
V
Saturation Voltage
IC=600A, VGE=15V, TJ=125°C
2.1
V
VCE=1200V, VGE=0V, TJ=25°C
4
mA
VCE=1200V, VGE=0V, TJ=125°C
40
mA
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=0V, VGE=±20V
Qge
Gate Charge
VCC=600V, IC=600A , VGE=±15V
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
2
mA
6120
nC
42.2
nF
2.82
nF
1.88
nF
VCC=600V, IC=600A
190
ns
Rise Time
RG =1.7Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=25°C
460
ns
tf
Fall Time
Inductive Load
55
ns
td(on)
Turn - on Delay Time
VCC=600V, IC=600A
220
ns
tr
Rise Time
RG =1.7Ω,VGE=±15V
60
ns
td(off)
Turn - off Delay Time
TJ=125°C
530
ns
tf
Fall Time
Inductive Load
75
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V, IC=600A
TJ=25°C
44.8
mJ
RG =1.7Ω
TJ=125°C
66.8
mJ
VGE=±15V
TJ=25°C
39.2
mJ
Inductive Load
TJ=125°C
61.2
mJ
Free-Wheeling Diode
IF=400A , VGE=0V, TJ=25°C
1.8
2.44
V
IF=400A , VGE=0V, TJ=125°C
1.5
2.20
V
Reverse Recovery Time
IF=400A , VR=800V
450
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
150
A
Qrr
Reverse Recovery Charge
TJ=125°C
41
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.04
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.09
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M4）
0.7
1.1
N· m
Weight
325
g
MIMMG600K120U
1200
1000
1000
800
800
T J =25°C
IC (A)
IC (A)
1200
600
V CE =20V
600
T J =125°C
400
400
200
200
T J =125°C
0
0
1
500
0
2
4
6
8
10
12
14
VGE（V）
Figure2. Typical Transfer characteristics
200
V CC =600V
R G =1.7ohm
V GE =±15V
T J =125°C
160
V CC =600V
I C =600A
V GE =±15V
T J =125°C
120
300
Eon Eoff (mJ)
Eon Eoff (mJ)
400
0
1.5
2.5
3.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
T J =25°C
E on
200
E on
80
E of f
E of f
40
100
0
0
0
7.5
10
12.5
5
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
400
800
1200
1600
2000
IC（A）
Figure3. Switching Energy vs. Collector Current
3
0
2.5
104
10
td(off )
103
td(off )
t (ns)
t (ns)
td(on )
2
10
tr
tf
101
0
V CC =600V
R G =1.7ohm
V GE =±15V
T J =125°C
240 360 480 600 720 840
IC（A）
Figure5. Switching Times vs. Collector Current
120
td(on)
tf
102
101
tr
0
2.5
V CC =600V
I C =600A
V GE =±15V
T J =125°C
7.5 10 12.5 15 17.5
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
5
MIMMG600K120U
100
25
20
V CC =600V
I C =600A
T J =25°C
C ies
V GE =0V
f=1MHz
10
C (nF)
VGE (V)
15
10
C oes
C res
1
5
0
0
0.1
1.6
3.2
2.4
4.0
Qg（µC）
Figure7. Gate Charge characteristics
0.8
0
2000
10000
1600
8000
20
25
30
35
ICpuls (A)
6000
1200
4000
800
T J =150°C
T C =25°C
V GE =15V
200
T J =150°C
T C =25°C
V GE =15V
tsc ≤10µs
2000
0
400 600 800 1000 1200 1400
VCE（V）
Figure10. Short Circuit Safe Operating Area
400
600 800 1000 1200 1400
VCE（V）
Figure9. Reverse Biased Safe Operating Area
1200
0
200
1200
T J =150°C
V GE ≥15V
1000
1000
800
800
T J =125°C
600
IF (A)
IC(A)
15
ICsc (A)
12000
0
0
10
VCE（V）
Figure8. Typical Capacitances vs. VCE
2400
400
5
600
400
400
T J =25°C
200
200
0
0
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG600K120U
10-1
10-3
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-1
ZthJC (K/W)
ZthJC (K/W)
10-2
1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-4
10-3
10-5 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
Dimensions in mm
Figure15. Package Outlines