MIMMG400KR060U

MIMMG400KR060U
600V 400A IGBT Module
RoHS Compliant
FEATURES
· Ultra Low Loss
· High Ruggedness
· High Short Circuit Capability
· Positive Temperature Coefficient
· With Fast Free-Wheeling Diodes
· 10K Ω Gate Protected Resistance Inside
APPLICATIONS
· Invertor
· Convertor
· Welder
· SMPS and UPS
· Induction Heating
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
IGBT
VCES
Collector - Emitter Voltage
600
V
VGES
Gate - Emitter Voltage
±20
V
IC
DC Collector Current
TC=25°C
600
A
TC=80°C
420
A
ICpuls
Pulsed Collector Current
TC=25°C, tp=1ms
1200
A
TC=80°C, tp=1ms
840
A
Ptot
Power Dissipation Per IGBT
2083
W
TJ
Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
3000
V
600
V
TC=25°C
500
A
TC=80°C
340
A
488
A
AC, t=1min
Free-Wheeling Diode
VRRM
Repetitive Reverse Voltage
IF(AV)
Average Forward Current
IF(RMS)
RMS Forward Current
IFSM
Non-Repetitive Surge
TJ=45°C, t=10ms, Sine
2000
A
Forward Current
TJ=45°C, t=8.3ms, Sine
2200
A
MIMMG400KR060U
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
TC=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
Unit
5.5
V
IGBT
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
VCE=VGE, IC=1mA
Collector - Emitter
IC=400A, VGE=15V, TJ=25°C
1.9
V
Saturation Voltage
IC=400A, VGE=15V, TJ=125°C
2.1
V
ICES
Collector Leakage Current
IGES
3.5
VCE=600V, VGE=0V, TJ=25°C
2
mA
VCE=600V, VGE=0V, TJ=125°C
12
mA
Gate Leakage Current
VCE=0V, VGE=±20V
2
mA
Qge
Gate Charge
VCC=300V, IC=400A , VGE=±15V
920
nC
Cies
Input Capacitance
21.2
nF
Coes
Output Capacitance
2.1
nF
Cres
Reverse Transfer Capacitance
1.4
nF
td(on)
Turn - on Delay Time
VCC=300V, IC=400A
45
ns
tr
Rise Time
RG =2.5Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=25°C
320
ns
tf
Fall Time
Inductive Load
35
ns
td(on)
Turn - on Delay Time
VCC=300V, IC=400A
50
ns
tr
Rise Time
RG =2.5Ω,VGE=±15V
45
ns
td(off)
Turn - off Delay Time
TJ=125°C
350
ns
tf
Fall Time
Inductive Load
40
ns
Eon
Turn - on Switching Energy
Eoff
Turn - off Switching Energy
VCE=25V, VGE=0V, f =1MHz
VCC=300V, IC=400A
TJ=25°C
14
mJ
RG =2.5Ω
TJ=125°C
18
mJ
VGE=±15V
TJ=25°C
10
mJ
Inductive Load
TJ=125°C
14
mJ
Free-Wheeling Diode
IF=400A , VGE=0V, TJ=25°C
1.9
2.2
V
IF=400A , VGE=0V, TJ=125°C
1.7
2.0
V
Reverse Recovery Time
IF=400A , VR=400V
50
ns
IRRM
Max. Reverse Recovery Current
diF/dt=-1000A/μs
45
A
Qrr
Reverse Recovery Charge
TJ=125°C
1.5
µC
VF
Forward Voltage
trr
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
RthJC
Junction-to-Case Thermal Resistance
Per IGBT
0.06
K /W
RthJCD
Junction-to-Case Thermal Resistance
Per Inverse Diode
0.15
K /W
Torque
Module-to-Sink
Recommended（M6）
3
5
N· m
Torque
Module Electrodes
Recommended（M6）
2.5
5
N· m
Torque
Module Electrodes
Recommended（M4）
0.7
1.1
N· m
Weight
325
g
MIMMG400KR060U
1200
1000
1000
800
800
TJ =25°C
600
VCE=20V
TJ =25°C
IC (A)
IC (A)
1200
600
TJ =125°C
TJ =125°C
400
400
200
200
0
0
1
240
Eon Eoff (mJ)
160
VCC=300V
RG=2.5ohm
VGE=±15V
TJ =125°C
2
6
8
10
12
14
VGE（V）
Figure2. Typical Transfer characteristics
80
120
Eon
80
40
0
0
0
4
100
Eon Eoff (mJ)
200
0
1.5
2.5
3.5
2
3
VCE(sat)（V）
Figure1. Typical Output characteristics
0.5
60
Eon
40
20
Eoff
Eoff
0
7.5
10 12.5 15 17.5
RG（ohm）
Figure4. Switching Energy vs. Gate Resistor
200
400 600 800 1000 1200 1400
IC（A）
Figure3. Switching Energy vs. Collector Current
1000
VCC=300V
IC=400A
VGE=±15V
TJ =125°C
0
2.5
5
1000
td(off)
t (ns)
t (ns)
td(off)
100
100
tr
td(on)
td(on)
tf
10
0
120
tf
VCC=300V
RG=2.5ohm
VGE=±15V
TJ =125°C
240 360 480 600 720 840
IC（A）
Figure5. Switching Times vs. Collector Current
tr
10
VCC=300V
IC=400A
VGE=±15V
TJ =125°C
3.75 50 6.25 7.5 8.75
RG（ohm）
Figure6. Switching Times vs. Gate Resistor
0
1.25 2.5
MIMMG400KR060U
100
25
20
VCC=300V
IC=400A
TJ =25°C
VGE =0V
f=1MHz
Cies
10
C (nF)
VGE (V)
15
10
Coes
Cres
1
5
0
0
1400
15
20
25
30
35
VCE（V）
Figure8. Typical Capacitances vs. VCE
3200
800
2400
600
1600
400
TJ =150°C
TC =25°C
VGE =15V
100
TJ =150°C
TC =25°C
VGE =15V
tsc≤10µs
800
0
200 300 400 500 600 700
VCE（V）
Figure10. Short Circuit Safe Operating Area
200
300 400 500 600 700
VCE（V）
Figure9. Reverse Biased Safe Operating Area
700
0
100
300
TJ =150°C
VGE ≥15V
600
250
500
200
400
IF (A)
IC(A)
TJ =125°C
300
150
100
200
TJ =25°C
50
100
0
0
10
ICsc (A)
ICpuls (A)
5
4000
1000
0
0
0
4800
1200
200
0.1
400
800
600
1000
Qg（nC）
Figure7. Gate Charge characteristics
200
50
75 100 125 150
TC Case Temperature(°C)
Figure11. Rated Current vs. TC
25
175
0
0
1.5 2.0 2.5
3
3.5
VF（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG400KR060U
1
1
-1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
ZthJC (K/W)
ZthJC (K/W)
10
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-3
10-3
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10-4 -4
10
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
Dimensions in mm
Figure15. Package Outlines