MIMMK110A160UA 1600V 110A thyristor Module RoHS Compliant Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition V RRM /V DRM T C =25°C unless otherwise specified Value Unit 1600 V I T(AV) T C =85℃,180° conduction, half sine wave; 110 A I T(RMS) as AC switch; 235 A T J =45℃, t=10m s (50H z),sine, V R =0; 1785 T J =45℃, t=8.3 m s (60H z),sine, V R =0; 1870 T J =45℃, t=10m s (50H z),sine, V R =V RRM ; 1500 T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ; 1570 16 I TSM T J =45℃, t=10m s (50H z),sine, V R =0; 2 T J =45℃, t=8.3 m s (60H z),sine, V R =0; A T J =45℃, t=10m s (50H z),sine, V R =V RRM ; 17.5 11.2 T J =45℃, t=8.3 m s (60H z),sine, V R = V RRM ; 12.3 I DRM /I RRM T J =130℃,V D =V R =1600V, gate open circuit; 20 mA dV/dt T J =130℃, exponential to 67% rated V DRM 500 V/us V ISOL 50Hz, all terminals shorted, t=1s, I ISOL ≤1mA ; 3500 V~ TJ Max. junction operating temperature range -40～130 ℃ T STG Max. storage temperature range -40～150 ℃ It 2 KA s MIMMK110A160UA ELECTRICAL CHARACTERISTICS Symbol Test Condition V TO rt T C =25°C unless otherwise specified Min. Typ. Max. Unit 16.7% x p x I AV < I < p x I AV ,T J =130°C; 0.80 V I > p x I AV , T J =130°C; 0.85 V 16.7% x p x I AV < I < p x I AV ,T J =130°C; 2.37 mΩ I > p x I AV , T J =130°C; 2.25 mΩ IH V AK = 6V, resistive load; 250 mA IL Anode supply =6V, resistive load=1Ω, 400 mA gate pulse =10V, 100us; V TM I TM =345A, t d =10 ms, half sine P GM t p ≤5ms, T J =125°C; 12 W P GM(AV) f=50Hz, T J =125°C; 3 W 3 A 10 V I GM -V GT t p ≤5ms, T J I GT V GD I GD di/dt V =125°C; V A =6V, R A =1Ω, T V GT 1.64 J =-40°C; 4 V A =6V, R A =1Ω; 2.5 V A =6V, R A =1Ω, T J =125°C; 1.7 V A =6V, R A =1Ω, T J =-40°C; 270 V A =6V, R A =1Ω; 150 V A =6V, R A =1Ω, T J =125°C; 80 V AK =V DRM , T J =125℃ T J = 25℃, V D =0.67V DRM , I TM =345A, V mA 0.25 V 6 mA 150 A/us I g = 500mA, tr< 0.5 µs, tp > 6 µs THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition T C =25°C unless otherwise specified value Unit R thjc DC operation,per junction; 0.30 K/W R THCS Mounting surface smooth,flat and greased,per junction 0.1 K/W Md Weight Mounting torque(M5) Terminal connection torque(M5) Typical value 3 to 5 N·m 105 g MIMMK110A160UA Characteristic curves 130 RTHJC(DC)=0.30 K/W 120 110 Conduction angle 100 90 30○ 80 60○ 90○ 120○ 70 0 Maximun allowable case tem (℃) Maximun allowable case tem (℃) 130 180○ 40 80 Average forward current(A) RTHJC(DC)=0.30 K/W 120 110 100 Conduction period 90 30○ 80 70 60 120 0 180○ 120○ 90○ 60○ 30○ RMS limit 100 80 60 40 Conduction angle 20 Per junction TJ=130℃ 0 0 40 80 Average on-state current(A) Maximun average on-state power loss (W) Maximun average on-state power loss (W) 160 120 120 200 180 160 140 120 100 RMS limit 80 Conduction period 60 40 Per junction TJ=130℃ 20 0 0 1500 At any rated load condition and with rated VRRM applied following surge 1300 Initial TJ=130℃ @60Hz 0.0083 s @50Hz 0.01 s 1100 Per junction 700 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current 20 40 60 80 100 120 140 160 180 Average on-state current(A) Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 60 120 Average on-state current (A) DC 180○ 120○ 90○ 60○ 30○ 180 Figure 3. on-state power loss characteristics 900 DC Figure 2. current rating characteristics Figure 1. current rating characteristics 140 60○ 90○ 120 ○ 180○ 1800 1600 Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial T = 130℃ J no voltage reapplied rated VRRM reapplied 1400 1200 1000 800 600 0.01 Per junction 0.1 Pulse Train Duration (s) 1 Figure 6. Maximum Non-Repetitive Surge Current MIMMK110A160UA 350 Maximum Total On-state Power Loss (W) Maximum Total On-state Power Loss (W) 350 180○ 120○ 90○ 60○ 30○ 300 250 200 Conduction angle 150 100 Per module TJ=125℃ 50 0 0 40 80 120 160 200 Total RMS Output Current (A) 240 300 Per junction 1 2K/W 100 50 0 60 0 20 40 80 100 120 140 Maximum Allowable Ambient Temperature (℃) 1 Steady State Value: RTHJC=0.30K/W (DC Operation) 0.1 0.01 1 Square Wave Pulse Duration (s) (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5μs, tp≥6μs b)Recommended load line for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃ (4) VGD (3) (2) (1) Frequency Limited by PG(AV) IGD 0.01 On-State Power Loss Characteristics-2 0.1 100 Rectangular gate pulse 0.1 0.001 1K/W 0.1 10 Figure.10 Thermal Impedance ZthJC Characteristics On State Voltage Drop Characteristics 1 0.7K/W 150 0.01 0.001 2 3 Instantaneous On-state Voltage (V) 10 0.4K/W 200 Transient Thermal Impedance ZthJC(K/W) TJ=130℃ 10 Instantaneous Gate Voltage (V) Instantaneous On-state Current (A) TJ=25℃ Figure.9 0.3K/W Figure.8 100 1 0.2K/W 250 Figure 7. On-State Power Loss Characteristics-1 1000 0 RTHSA=0.1K/W-Delta R 1 Instantaneous Gate Current (A) Figure.11 Gate Characteristics 10 100 1000 MIMMK110A160UA Package Outline (Dimensions in mm)