MIMMK130S160UA 1600V 130A thyristor Module RoHS Compliant Features · Isolation voltage 3500 V~ · Industrial Standard Package · High Surge Capability · Glass Passivated Chips · Simple Mounting · Electrically Isolated by DBC Ceramic Applications · DC Motor Control and Drives · Battery Charges · Welders · Power Converters · Lighting Control · Heat and Temperature Control Advantages · Space and weight savings · Improved temperature and power cycling ABSOLUTE MAXIMUM RATINGS Symbol Test Condition VRRM TC=25°C unless otherwise specified Value Unit 1600 V IT(AV) TC=85 , 180° conduction, half sine wave; 130 A IT(RMS) as AC switch; 300 A TJ=45 , t=10ms (50Hz), sine, VR=0; 3200 TJ=45 , t=8.3 ms (60Hz), sine, VR=0; 3360 TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 2700 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 2800 52 ITSM TJ=45 , t=10ms (50Hz), sine, VR=0; I2t TJ=45 , t=8.3 ms (60Hz), sine, VR=0; A TJ=45 , t=10ms (50Hz), sine, VR=VRRM; 57 37 TJ=45 , t=8.3 ms (60Hz), sine, VR= VRRM; 39 IDRM/IRRM TJ=125 , VD=VR=1600V; 50 mA dV/dt TJ =125 , exponential to 67% rated VDRM 1000 V/us VISOL 50Hz, all terminals shorted, t=1s, IISOL≤1mA ; 3500 V~ TJ Max. junction operating temperature range -40～125 TSTG Max. storage temperature range -40～150 K A2s ℃ MIMMK130S160UA ELECTRICAL CHARACTERISTICS Symbol Test Condition TC=25°C unless otherwise specified Min. Typ. Max. Unit 16.7% x π x IAV < I <π x IAV,TJ =130°C; 0.86 V I > π x IAV , TJ =130°C; 1.05 V 16.7% x π x IAV < I <π x IAV,TJ =130°C; 2.02 mΩ I > π x IAV , TJ =130°C; 1.65 mΩ IH VAK= 6V, initial IT=30A; 200 mA IL Anode supply =6V, resistive load=1Ω, 400 mA VTO rt gate pulse =10V, 100us; VTM ITM=408A, td=10 ms, half sine; PGM tp≤5ms, Tj=125°C; 12 W PGM(AV) f=50Hz, Tj=125°C; 3 W 3 A 10 V IGM -VGT 1.57 V tp≤5ms, Tj=125°C; VA=6V, RA=1Ω, Tj=-40°C; VGT IGT VGD IGD di/dt 4 VA=6V, RA=1Ω; 2.5 VA=6V, RA=1Ω, Tj=125°C; 1.7 VA=6V, RA=1Ω, Tj=-40°C; 270 VA=6V, RA=1Ω; 150 VA=6V, RA=1Ω, Tj=125°C; 80 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Test Condition A 0.3 V 10 mA 300 A/us VAK=VDRM, Tj=125 ITM=400A, rated VDRM, Tj=125 V TC=25°C unless otherwise specified value Unit Rthjc DC operation, per junction; 0.20 K/W RTHCS Mounting surface smooth,flat and greased, per junction; 0.1 K/W Md Weight Mounting torque(M6) Terminal connection torque(M6) Typical value 4 to 6 N·m 156 g MIMMK130S160UA Characteristic curves Maximun allowable case tem (℃) RTHJC(DC)=0.2 K/W 120 110 Conduction angle 100 90 30○ 60○ 80 70 0 90○ 120○ Maximun allowable case tem (℃) 130 130 180○ 200 150 180○ 120○ 90○ 60○ 30○ RMS limit 100 Conduction angle 50 0 0 Per junction TJ=125℃ 30 60 90 120 100 Conduction period 30○ 90 60○ 80 90○ 70 120 ○ 0 150 250 200 100 Conduction period 50 0 Per junction TJ=125℃ 0 Initial TJ=125℃ @60Hz 0.0083 s @50Hz 0.01 s 2400 2200 2000 1800 1600 1400 Per junction 1200 100 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Figure 5. Maximum Non-Repetitive Surge Current 50 100 150 200 250 Average on-state current(A) Figure 4. on-state power loss characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) At any rated load condition and with rated VRRM applied following surge 2600 250 150 RMS limit Figure 3. on-state power loss characteristics 2800 150 200 100 50 Average on-state current (A) DC 180○ 120○ 90○ 60○ 30○ 300 Average on-state current(A) 3000 180○ 350 Maximun average on-state power loss (W) Maximun average on-state power loss (W) 250 110 Figure 2. current rating characteristics Figure 1. current rating characteristics 300 120 60 80 100 120 140 40 60 20 Average forward current(A) RTHJC(DC)=0.2 K/W 3500 3000 2500 Maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. Initial TJ= 125℃ no voltage reapplied rated VRRM reapplied 2000 1500 Per junction 1000 0.01 0.1 Pulse Train Duration (s) 1 Figure 6. Maximum Non-Repetitive Surge Current MIMMK130S160UA 450 400 350 300 250 Conduction angle Maximum Total On-state Power Loss (W) Maximum Total On-state Power Loss (W) 450 180○ 120○ 90○ 60○ 30○ 200 150 100 Per module TJ=125℃ 50 0 0 100 200 Total RMS Output Current (A) 350 300 0.25K/W 250 0.4K/W 0.6K/W 1K/W 200 150 100 50 0 300 0 25 Figure 7. On-State Power Loss Characteristics-1 Figure.8 Transient Thermal Impedance ZthJC 1 1000 TJ=25℃ TJ=125℃ 100 10 Per junction 0 0 4 1 2 3 Instantaneous On-state Voltage (V) 75 On-State Power Loss Characteristics-2 0.01 1 0.01 0.1 Square Wave Pulse Duration (s) (1) PGM = 200 W, tp = 300s (2) PGM = 60 W, tp = 1 ms (3) PGM = 30 W, tp = 2 ms (4) PGM = 12 W, tp = 5 ms 1 (4) VGD (3) (2) (1) Frequency Limited by PG(AV) IGD 0.1 10 Figure.10 Thermal Impedance ZthJC Characteristics a)Recommended load line for rated di/dt:20V, 20Ω tr =0.5s, tp≥6 s b)Recommended load line 10 for ≤30% rated di/dt:15V, (a) 40Ω (b) TJ=-40℃ TJ=25℃ TJ=125℃ 0.01 125 0.1 100 Rectangular gate pulse 0.1 0.001 100 Steady State Value (DC Operation) 0.001 0.001 5 Figure.9 On State Voltage Drop Characteristics Instantaneous Gate Voltage (V) 50 Maximum Allowable Ambient Temperature (℃) 10000 Instantaneous On-state Current (A) RTHSA=0.01K/W-Delta R 0.04K/W 0.08K/W 0.12K/W 0.16K/W 400 1 Instantaneous Gate Current (A) Figure.11 Gate Characteristics 10 100 1000 MIMMK130S160UA Package Outline (Dimensions in mm)