Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC-ALH382 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-ALH382 v03.1210 Amplifiers - low noise - Chip 1 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Typical Applications Features This HMC-ALH382 is ideal for: Noise Figure: 3.8 dB • Short Haul / High Capacity Links P1dB: +12 dBm • Wireless LANs Gain: 21 dB • Military & Space Supply Voltage: +2.5V 50 Ohm Matched Input/Output Die Size: 1.55 x 0.73 x 0.1 mm General Description Functional Diagram The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifications, TA = +25° C, Vdd = 2.5V, Idd = 64 mA* Parameter Min. Frequency Range Gain Typ. Max. 57 - 65 19 GHz 21 Noise Figure 4 Input Return Loss 12 Units dB 5.5 dB dB Output Return Loss 10 dB Output Power for 1 dB Compression (P1dB) 12 dBm Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) 64 100 mA *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 64 mA 1-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ALH382 v03.1210 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 6 25 5 NOISE FIGURE (dB) 30 GAIN (dB) 20 15 10 5 4 3 2 1 0 0 57 59 61 63 65 57 59 FREQUENCY (GHz) 61 63 65 FREQUENCY (GHz) Input Return Loss vs. Frequency Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 1 Noise Figure vs. Frequency -10 -15 -20 -10 Amplifiers - low noise - Chip Linear Gain vs. Frequency -15 -20 57 59 61 FREQUENCY (GHz) 63 65 57 59 61 63 65 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-2 HMC-ALH382 v03.1210 Amplifiers - low noise - Chip 1 Wideband Linear Gain GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Wideband Input Return Loss Wideband Output Return Loss Absolute Maximum Ratings 1-3 Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc Channel Temperature 180 °C Thermal Resistance (channel to die bottom) 108.4 °C/W Continuous Pdiss (T= 85 °C) (derate 9.2 mW/°C above 85 °C) 0.87W RF Input Power -5 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ALH382 v03.1210 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Die Packaging Information [1] Standard Alternate GP-5 (Gel Pack) [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Amplifiers - low noise - Chip 1 Outline Drawing 7. OVERALL DIE SIZE ±.002” Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2 RFOUT This pad is AC coupled and matched to 50 Ohms. 3 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. 4 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-4 HMC-ALH382 v03.1210 Assembly Diagram Amplifiers - low noise - Chip 1 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-ALH382 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005”) Thick Moly Tab Amplifiers - low noise - Chip v03.1210 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-6