Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC-AUH312 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Typical Applications Features This HMC-AUH312 is ideal for: Small Signal Gain: >8 dB • Fiber Optic Modulator Driver 65 GHz Distributed Amplifier • Fiber Optic Photoreceiver Post Amplifier Can be configured with and w/o Bias-Tees for Vd and Vg1 bias • Gain Block for Test & Measurement Equipment 4 Low Power Dissipation: 300 mW with Bias Tee @ Vdd = 5V 360 mW w/o Bias Tee @ Vdd = 6V 480 mW w/o Bias Tee @ Vdd = 8V • Point-to-Point/Point-to-Multi-Point Radio • Wideband Communication & Surveillance Systems MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP • Radar Warning Receivers 4 - 20 Small Die Size: 1.2 x 1.0 x 0.1 mm General Description Functional Diagram The HMC-AUH312 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between 500 MHz and 65 GHz and provides a typical 3 dB bandwidth in excess of 65 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5V peak to peak, which makes it ideal for use in broadband wireless, fiber optic communication and test equipment applications. The amplifier die occupies 1.2 mm2 which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH312 can be used with or without a bias-tee and requires off-chip blocking components and bypass capacitors for the DC supply lines. Adjustable gate voltages allow for gain adjustment. Electrical Specifi cations, TA = +25° C, Vdd= +8V * Parameter Min. Frequency Range Gain 8 Typ. Max. Units 0.5 - 65 GHz 10 dB Input Return Loss 12 dB Output Return Loss 15 dB Supply Current (Idd) (Vdd= 8V) 60 mA *Unless otherwise indicated, all measurements are from probed die For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz On-Wafer Group Delay vs. Frequency On-Wafer Gain vs. Frequency 50 16 GROUP DELAY (pSec) 14 GAIN (dB) 12 10 8 6 4 40 30 4 20 10 0 0 0 20 40 60 80 0 100 20 FREQUENCY (GHz) On-Wafer Input Return Loss vs. Frequency 60 80 100 On-Wafer Output Return Loss vs. Frequency 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 40 FREQUENCY (GHz) -10 -15 -20 -10 -15 -20 -25 -25 0 20 40 60 FREQUENCY (GHz) 80 100 0 20 40 60 80 100 FREQUENCY (GHz) MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 2 Note: Measured Performance Characteristics (Operating Temperature TA=25ºC) Vdd = 6V, Vgg2 = 1.8V Idd = 60mA (On-Wafer) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 21 HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Recommended Operating Conditions w/ Bias Tee Absolute Maximum Ratings Drain Bias Voltage w/ Bias Tee (Vdd) MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4 - 22 +7 Vdc Parameter Min. Typ. Max. Units 3 5 6 V 80 mA Drain Bias Voltage w/out Bias Tee (Vdd) +8.25 Vdc Positive Supply Voltage Gain Bias Voltage (Vg1) 0.5V Positive Supply Current Gain Bias Voltage (Vg2) 1.8V Gate Voltage (Vg1) RF Input Power +10 dBm Gate Voltage (Vg2) Channel Temperature 180 °C RF Input Power Storage Temperature -40 to +85 °C Operating Temperature Operating Temperature -0 to +70 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 60 -1 0.3 1.8 0 25 Alternate GP-2 (Gel Pack) [2] °C Parameter Min. Typ. Max. Units 5 8 8.25 V 65 mA 0.5 V 60 Gate Voltage (Vg1) -1 Gate Voltage (Vg2) 1 1.8 0 25 Operating Temperature Standard dBm Positive Supply Voltage RF Input Power Die Packaging Information [1] 4 70 Recommended Operating Conditions w/out Bias Tee Positive Supply Current Outline Drawing V 4 dBm 70 °C NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. V V 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Pad Descriptions Pad Number Function Description 1 RFIN DC coupled. An off chip blocking cap is needed. 2, 4 Vg1, Vg2 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. Interface Schematic 3 Vdd, RFOUT RF output and DC bias (Vd) for the output stage. 5 Vdd Supply voltage for amplifier. See assembly diagram for external components. Die Bottom GND Die Bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4 - 23 HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Assembly Drawing MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Device Mounting • 1 mil wire bonds are used on Vg1, Vg2 connections to the capacitors. • 0.5mil x 3mil ribbon bonds are used on all other connections • Capacitors on Vg1, Vg2 are used to filter low frequency, <800MHz, RF pickup For best gain flatness and group delay variation, the capacitors off of Vdd, Vg1 and Vg2 should be placed as close to the die as possible so as to minimize bond wire parasitics. Vdd is especially sensitive to the bond parasitics. • Silver-filled conductive epoxy is used for die attachment. (Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias) Device Operation • These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. • The input and output to this device should be AC-coupled. Device Power Up Instructions 1. Ground the device 2. Bring Vg2 to +1.8V (no drain current) 3. Turn on Vdd to 0V. Bring Vdd to +8V (+5V if a bias tee is used to for Vd bias). +6V is minimum recommended Vdd 4. Turn on Vg1 to 0V. Adjust Vg1 should be adjusted to bring Id to 60mA. Device Power Down Instructions 1. Reverse the sequence identified above in steps 1 through 4. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP • 4 - 25 HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 4 - 26 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-AUH312 v03.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, 0.5 - 65 GHz Notes MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 27